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At least 199 records · Page 11

All sources NASA NTRS DOE OSTI

NASA NTRS1975

Coupling characteristics of thin-film metal-oxide-metal diodes at 10.6 microns

Direct detection experiments have demonstrated the coherent coupling of 10.6 micrometer radiation into photolithographically fabricated metal-oxide-metal tunnel junctions. A CO2 laser beam mechanically chopped at 1 KHz was focused at a variable angle of incidence with a power density of about 10 W/sq cm at the diodes. Diodes in which the junction resistance was much greater than the lead resistance displayed angular characteristics dominated by coherent antenna coupling.

Wang, S. Y.↗

DOE OSTI2022

A unified thermionic and thermionic-field emission (TE–TFE) model for ideal Schottky reverse-bias leakage current

We present a unified thermionic emission (TE) and thermionic-field emission (TFE) model for the ideal reverse-bias leakage current in Schottky junctions. The unified TE–TFE analytical model advances upon previous analytical TFE models by Murphy–Good and Padovani–Stratton, which are the two most widely adopted models by the community, in two major aspects: (i) the applicability of the TFE expression therein is extended to near-zero surface electric fields by an error-function correction, allowing for the calculation of the total current by a nontrivial sum of TE (over-the-barrier current) and TFE (below-the-barrier current) contributions; therefore, an accurate description of the TE-to-TFE transition region is captured analytically for the first time; (ii) image-force lowering is considered with much-simpler correction terms. Comparisons with the reference numerical model show that the unified TE–TFE model has excellent accuracy, as well as a 10 000× reduction in computation time. The unified model is further tested against experimental data from Schottky barrier diodes based on Si, 4H-SiC, GaN, and β-Ga 2 O 3 , revealing accurate extractions of barrier heights and correct descriptions of the ideal reverse leakage characteristics. With the extended applicable range, improved accuracy, and computational efficiency, the unified TE–TFE model is highly valuable for the design and analysis of devices based on Schottky junctions, as well as for potential integration in technology computer-aided design (TCAD) tools.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2023

Effects of fast and thermal neutron irradiation on Ga-polar and N-polar GaN diodes

Studies of the radiation tolerance and electrical behavior of gallium nitride (GaN) based devices are important for the next generation of high-power and high-voltage electronics that may be subjected to harsh environments such as nuclear reactor and fusion facilities, particle accelerators, and post-denotation environments. Here, in this work, we study the behavior of Ga-polar and N-polar GaN Schottky diodes before and after exposure to fast and thermal + fast neutrons. Temperature-dependent current–voltage (I–V) and circular transmission line method (CTLM) measurements were used to study the electrical characteristics. A strong reduction in reverse leakage current and an increase in differential resistance in forward bias were observed after neutron irradiation. Thermionic emission (TE), Frenkel–Poole (FP) emission, and Fowler–Nordheim (FN) tunneling models were used to explain the forward and reverse I–V characteristics pre- and post-irradiation. The study confirms that Ga-polar and N-polar GaN Schottky diodes exhibit different electrical responses to fast and thermal neutron irradiations. The reverse bias characteristics of N-polar diodes are less affected after the fast neutron irradiation compared to Ga-polar diodes, while in the forward bias region, the electrical behavior after fast and thermal neutron irradiations is similar in Ga-polar and N-polar diodes. The results indicate that the role of orientation should be considered in the design of GaN-based radiation-tolerant electronics.

42 ENGINEERING↗

NASA NTRS2001

Design Considerations for Heavily-Doped Cryogenic Schottky Diode Varactor Multipliers

Diode modeling for Schottky varactor frequency multipliers above 500 GHz is presented with special emphasis placed on simple models and fitted equations for rapid circuit design. Temperature- and doping-dependent mobility, resistivity, and avalanche current multiplication and breakdown are presented. Next is a discussion of static junction current, including the effects of tunneling as well as thermionic emission. These results have been compared to detailed measurements made down to 80 K on diodes fabricated at JPL, followed by a discussion of the effect on multiplier efficiency. Finally, a simple model of current saturation in the undepleted active layer suitable for inclusion in harmonic balance simulators is derived.

Schlecht, E.↗

DOE OSTI2025

Measurement of Contact Resistivity In Symmetric Polycrystalline Si/SiO x /Monocrystalline Si Test Structures Using Variable Light Illumination

While different methods exist to determine the contact resistivity in semiconductor devices, these methods are limited to measurement of the majority carrier contacts. The measurement of p‐ or n‐type contacts on n‐ or p‐type crystalline silicon, respectively, is challenging due to the blocking diode formed by the p–n junction. In this article, we address this problem for tunneling oxide passivating contacts used in high‐efficiency Si solar cells. We propose a universal method to extract contact resistivity on symmetric test structures with polycrystalline silicon on SiO x (poly‐Si/SiO x ) passivating contacts under illumination, both for p–n and high–low‐junction passivated contacts. In this method, we demonstrate that the total contact resistance of each cell grid finger to the base wafer is governed by its effective contact area, defined by the transfer length extending from both sides of the finger. Therefore, the grid contact resistance of a poly‐Si contact depends on the ratio of the doped poly‐Si sheet resistance to the tunneling contact resistivity.

14 SOLAR ENERGY↗

NASA NTRS1993

Nonintrusive fast response oxygen monitoring system for high temperature flows

A new technique has been developed for nonintrusive in situ measurement of oxygen concentration, gas temperature, and flow velocity of the test media in hypersonic wind tunnels. It is based on absorption of near-infrared radiation from inexpensive GaAlAs laser diodes used in optoelectronics industry. It is designed for simultaneous measurements along multiple lines of sight accessed by fiber optics. Molecular oxygen concentration is measured from the magnitude of absorption signals; rotational gas temperature is measured from the intensity ratio of two oxygen absorption lines; and the flow velocity is measured from the Doppler shift of the absorption line positions. This report describes the results of an extensive series of tests of the prototype instrument in laboratory flames emphasizing assessment of the instruments capabilities for quantitative measurement of O2 concentration (mole fraction) and gas temperature.

Oh, Daniel B.↗

NASA NTRS1987

Optical response at 10.6 microns in tungsten silicide Schottky barrier diodes

Optical response to radiation at a wavelength of 10.6 microns in tungsten silicide-silicon Schottky barrier diodes has been observed. Incident photons excite electrons by means of junction plasmon assisted inelastic electron tunneling. At 78 K, a peak in the second derivative of current versus junction bias voltage was observed at a voltage corresponding to the energy of photons having a wavelength of 10.6 microns. This peak increased with increasing incident laser power, saturating at the highest laser powers investigated.

Kumar, Sandeep↗

NASA NTRS2006

NASA Tech Briefs, April 2006

The topics covered include: 1) Replaceable Sensor System for Bioreactor Monitoring; 2) Unitary Shaft-Angle and Shaft-Speed Sensor Assemblies; 3) Arrays of Nano Tunnel Junctions as Infrared Image Sensors; 4) Catalytic-Metal/PdO(sub x)/SiC Schottky-Diode Gas Sensors; 5) Compact, Precise Inertial Rotation Sensors for Spacecraft; 6) Universal Controller for Spacecraft Mechanisms; 7) The Flostation - an Immersive Cyberspace System; 8) Algorithm for Aligning an Array of Receiving Radio Antennas; 9) Single-Chip T/R Module for 1.2 GHz; 10) Quantum Entanglement Molecular Absorption Spectrum Simulator; 11) FuzzObserver; 12) Internet Distribution of Spacecraft Telemetry Data; 13) Semi-Automated Identification of Rocks in Images; 14) Pattern-Recognition Algorithm for Locking Laser Frequency; 15) Designing Cure Cycles for Matrix/Fiber Composite Parts; 16) Controlling Herds of Cooperative Robots; 17) Modification of a Limbed Robot to Favor Climbing; 18) Vacuum-Assisted, Constant-Force Exercise Device; 19) Production of Tuber-Inducing Factor; 20) Quantum-Dot Laser for Wavelengths of 1.8 to 2.3 micron; 21) Tunable Filter Made From Three Coupled WGM Resonators; and 22) Dynamic Pupil Masking for Phasing Telescope Mirror Segments.

Source record↗

NASA NTRS1977

MIS diode structure in As/+/ implanted CdS

Structure made by As implantation of carefully prepared high-conductivity CdS surfaces followed by Pt deposition and 450 C anneal display rectifying, although substantially different, I-V characteristics in the dark and during illumination with subband-gap light. Structures prepared in the same way on an unimplanted portion of the substrate have similar I-V characteristics, except that the forward turnover voltage for an illuminated unimplanted diode is much smaller than that for an implanted diode. It is suggested that the charge conduction in both structures is dominated by hole and/or electron tunneling through a metal-semiconductor potential barrier. The tunneling processes appear to be quite sensitive to subband-gap illumination, which causes the dramatic decreases of turnover voltages and apparent series resistances. The difference in turnover voltage appears to be caused by interface states between the Pt electrode and the implanted layer, which suggests a MIS model.

Hutchby, J. A.↗

NASA NTRSDate not supplied

Spectral Proper Orthogonal Decomposition of uPSP Measurements in Recent NASA Ames Wind Tunnel Test

This paper discusses Spectral Proper Orthogonal Decomposition (SPOD) of the Unsteady Pressure-Sensitive Paint (uPSP) measurements in recent NASA Ames wind tunnel test. The uPSP measurements were collected using Innovative Scientific Solutions, Inc. (ISSI) porous, fast-response pressure-sensitive paint, 40 ISSI four-inch air-cooled Light-Emitting Diodes, and 8 Phantom v2512 high-speed cameras at 10,000 frames per second in the uPSP Launch Vehicle Demonstration Test (LVDT) of the Space Launch System (SLS) vehicle in the 11-by 11-foot transonic test section of the Unitary Plan Wind Tunnel at NASA Ames Research Center in April 2024. SPOD is derived from a space-time proper orthogonal decomposition problem for statistically stationary flows. SPOD modes are determined in the frequency domain. Each SPOD mode oscillates at a single frequency. SPOD can be viewed as an extension of the Discrete Fourier Transform composition and the Dynamic Mode Decomposition. In this paper, the outputs of SPOD of the uPSP measurements in the uPSP LVDT are presented and the effectiveness of SPOD in the identification, diagnosis and analysis of the aerodynamic and aeroacoustic phenomena is demonstrated. The unsteady and dynamic property of the pressure field on the surface of the SLS Block 1B crew vehicle is presented with the visualization of the SPOD modes of the uPSP measurements in the tests of a Mach sweep run of the uPSP LVDT. The SPOD outputs were generated with the execution in parallel of a code in Python, with the library of Message Passing Interface for parallel processing, on the NASA Pleiades supercomputer. The work described in this paper is a part of NASA’s development of a new state-of-the-art uPSP capability in production wind tunnels. Funding was provided by the NASA Aerosciences Evaluation and Test Capabilities Portfolio Office.

Aeroacoustics↗

NASA NTRS1979

Miniature velocimeter

Laser velocimeter (LV) designed to use semiconductor-diode laser is 100 times smaller than continuous-wave gas-laser velocimeter permitting mounting within wind-tunnel models or on engine walls. Mini LV uses only 0.4 watts of power and measures velocities with accuracy of 98% or better.

Franke, J. M.↗

NASA NTRS2005

Diode Laser Sensors for Arc-Jet Characterization

The development and application of tunable diode laser (TDL) absorption sensors to monitor the health and operating conditions in the large-scale 60 MW arc-heated- plasma wind-tunnel at NASA Ames Research Center is reported. The interactive heating facility (THF) produces re-entry flow conditions by expanding the gas heated in a constricted plasma arc-heater to flow at high velocity over a model located in a test cabin. This facility provides the conditions needed to test thermal protective systems for spacecraft re-entering the earth s atmosphere. TDL sensors are developed to monitor gas flows in both the high-temperature constricted flow and the supersonic expansion flow into test cabin. These sensors utilize wavelength-tuned diode lasers to measure absorption transitions of atomic oxygen near 777.2 nm, atomic nitrogen near 856.8 nm, and atomic copper near 793.3 nm. The oxygen and nitrogen sensors measure the population density in exited electronic states of these atoms. The measurements combined with the assumption of local thermal and chemical equilibrium yield gas temperature (typically near 7,000K). The nitrogen and oxygen population temperatures are redundant, and their close agreement provides an important test of the local thermal equilibrium assumption. These temperature sensors provide time-resolved monitors of the operating conditions of the arc-heater and can be used to verify and control the test conditions. An additional TDL sensor was developed to monitor the copper concentration in the arc-heater flow yielding values as high as 13 ppm. Measurements of copper in the flow can identify flow conditions with unacceptably rapid electrode erosion, and hence this sensor provides valuable information needed to schedule maintenance to avoid costly arc-heater failure. TDL sensors were also developed for measurements in the test cabin, where absorption measurements of the populations of argon and molecular nitrogen in excited metastable electronic states established that the number density of these excited species is much lower than estimated using frozen-chemistry approximations. This key finding suggests that in the post-expansion region there is not a significant energy sequestration in electronically excited species. Finally, TDL measurements of atomic potassium seeded into the test cabin flow were used to directly measure the static temperature of the test gas. The results of this study illustrate the high potential of time-resolved TDL measurements for routine and economical sensing of arc-heater health (gas temperature and electrode erosion) as well as the time-resolved test-cabin-flow conditions in front of the model.

Hanson, Ronald K.↗

DOE OSTI2026

First principles band structure of interacting phosphorus and boron/aluminum δ -doped layers in silicon

Silicon can be heavily doped with phosphorus in a single atomic layer (a δ layer), significantly altering the electronic structure of the conduction bands within the material. Recent progress has also made it possible to further dope silicon with acceptor-based δ layers using either boron or aluminum, making it feasible to create devices with interacting δ layers with opposite polarity. Using density functional theory, we calculate the electronic structure of a phosphorus-based δ layer interacting with a boron or aluminum δ layer, varying the distances between the δ layers. At separations 1 nm and smaller, the dopant potentials overlap and largely cancel each other out, leading to an electronic structure closely mimicking intrinsic silicon. At separations greater than 1 nm, the two δ layers behave independently of one another, with an equivalent electronic structure to a p–n diode with an intrinsic layer taking the place of the depletion region. One mechanism for charge transfer between δ layers at larger distances could be tunneling, where we see a tunneling probability exceeding what would be seen for a standard silicon 1.1 eV triangular barrier, indicating that the interaction between delta layers may enhance tunneling compared to a traditional junction.

delta layers↗

NASA NTRSDate not supplied

Spectral Proper Orthogonal Decomposition of uPSP Measurements in Recent NASA Ames Wind Tunnel Test

Aeroacoustics↗

NASA NTRS1998

A Two-Line Absorption Instrument for Scramjet Temperature and Water Vapor Concentration Measurement in HYPULSE

A three beam water vapor sensor system has been modified to provide for near simultaneous temperature measurement. The system employs a tunable diode laser to scan spectral line of water vapor. The application to measurements in a scramjet combustor environment of a shock tunnel facility is discussed. This report presents and discusses die initial calibration of the measurement system.

Tsai, C. Y.↗

NASA NTRS1984

Low-Noise Submillimeter-Wave Diode

Low noise achieved without usual high resistance. Barrier of p-type material placed between metal anode and heavily-doped gallium arsenide. Ntype epitaxial layer eliminated. Barrier prevents quantum tunneling of electrons between semiconductor and metal. Higher breakdown structure provided.

Mattauch, R. J.↗

DOE OSTI2026

Surface Energy Modulated Self‐Assembly of Percolative Gallium Nanodroplet Films for Stretchable Electronics

Advancements in soft robotics and wearable technologies have led to an increased need for flexible and stretchable electronic systems. Liquid metals like Gallium (Ga) and its alloys offer high potential in the field of stretchable electronics and photonics due to their inherent high conductivity and malleability. However, their high surface tension and native oxide formation hinder uniform wetting and continuous film formation to get conducting films. Here, we report a fabrication strategy to realize electrically conductive Ga thin films with effective thicknesses around 100 nm on polymeric and elastomeric substrates. By enhancing the surface energy of the elastomer, we create uniform Ga nanodroplets capable of sustaining stretchability up to 200% strain. Our devices exhibit electronic conduction primarily through tunneling and display strain tunable piezoresistive characteristics, which are explained using Kirchhoff's resistive network and Simmon's analytical tunneling current model. To showcase the device's capability in fields of stretchable electronics, we demonstrate several functional prototypes, including flexible devices integrated with Light Emitting Diodes (LEDs), curvature and pressure sensors, and soft robotic grippers capable of sensing object curvature. The demonstrated devices highlight the potential of this approach for scalable integration of stretchable electronics in soft robotic and wearable platforms.

42 ENGINEERING↗

NASA NTRS2016

First Demonstration of Single-Mode Distributed Feedback Type-I GaSb Cascade Diode Laser Emitting near 2.9 µm

We demonstrate GaSb-based laterally-coupled distributed-feedback type-I cascade diode lasers emitting near 2.9 µm as potential sources for OH measurements. The laser heterostructures consist of two GaInAsSb quantum well stages in series separated by GaSb/AlSb/InAs tunnel junction and InAs/AlSb electron injectors. Single-mode emission is generated using second order lateral Bragg grating etched alongside narrow ridge waveguides. The lasers were fabricated into 2-mm-long devices, solder-mounted epi-up on copper submounts, and operate at room temperature. With an anti-reflection coating at the emission facet, the lasers exhibit a typical current threshold of 110 mA at 20 °C and emit more than 14 mW of output power. The Bragg wavelength temperature tuning rate was 0.29 nm/°C.

type-I↗