NASA NTRS · 19830000498
Low-Noise Submillimeter-Wave Diode
Abstract
Low noise achieved without usual high resistance. Barrier of p-type material placed between metal anode and heavily-doped gallium arsenide. Ntype epitaxial layer eliminated. Barrier prevents quantum tunneling of electrons between semiconductor and metal. Higher breakdown structure provided.
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Mattauch, R. J.. 1984-11-01. Low-Noise Submillimeter-Wave Diode. https://ntrs.nasa.gov/citations/19830000498
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