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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 199 records · Page 11
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Tuning effect of vanadium substitution on the structural and electronic properties of potassium hollandite surfaces

Metal oxide surfaces possess unique properties that are crucial for a wide variety of applications. Herein, density functional theory calculations are performed to study surfaces of potassium hollandite, KMn 8 O 16 , a promising cathode material for electrochemical energy storage, and the vanadium-substituted analog KMn 7 VO 16 . The results show that there is a clear increase in the stability of KMn 8 O 16 with (001) < (110) < (100) or (010), apt to adopt an elongated rod-like morphology. The vanadium (V)-substitution lowers the crystal symmetry and prefers to occupy the surface sites, resulting in electron redistribution and selective tuning of surface energy depending on the surface structures. In particular, the higher stability of substituted V 4+ compared with Mn 4+ ions leads to stabilization of the (001) surface due to the direct interaction of reduced Mn δ+ ions on the surface, while such tuning effect decreases with the increase in surface stability, (110) > (100) and (010). As a result, the KMnO 16 rod is shortened upon V-substitution as observed experimentally, effectively facilitating the ion transport during discharge. The V substituents also introduce stabilization to the defect surfaces resulting from Mn 2+ dissolution during cycling, thereby hindering further structural decay. In conclusion, our study demonstrates the potential tuning effect of V-substitution to promote the ion transport and mitigate the capacity degradation of α-MnO 2 -based materials.

25 ENERGY STORAGE↗
DOE OSTI2026

Superlattice reflection signatures of the insulator–metal transition in V 3 O 5 thin films

Nanoelectronic systems that are inspired by the brain are increasingly looking to insulator–metal transition (IMT) materials as they can mimic the response characteristics of neurons to temperature changes so that these can be used in robotic and computational applications. V 3 O 5 has an insulator–metal transition at ∼430 or ∼80 K higher than VO 2 and provides a unique high-temperature opportunity for these types of applications. Here, in this work, we track the structural evolution of V 3 O 5 thin films across the IMT through conventional selected-area electron diffraction (SAED) and four-dimensional scanning TEM (4D-STEM), correlated with temperature-dependent resistance measurements. SAED patterns show reversible evidence of superlattice reflections associated with the IMT—present below T IMT and absent above it—consistent with the accompanying drop in resistance. At room temperature, nanobeam electron diffraction patterns further reveal three local configurations: (i) type I regions with clean patterns lacking superlattice reflections and spot splitting; (ii) type II regions exhibiting rows of superlattice reflections and split spots indicative of crystallographic variants; and (iii) type III regions with negligible superlattice reflections but larger spot splitting suggestive of overlapping domains of insulating and conducting phases likely driven by local lattice distortions. Upon heating, the superlattice reflections disappear between 413 and 453 K, concurrent with the resistance drop at T IMT , consistent with the emergence of a conducting phase. The overall diffraction geometry remains essentially unchanged up to 573 K, implying that relative domain orientations persist through the transition. These observations reveal nanoscale structural heterogeneity in V 3 O 5 thin films across the IMT and inform operation in regimes where mixed-phase textures are expected. A plausible indexing framework rationalizing the observed geometries is presented in the Discussion section, alongside its limitations and alternative interpretations.

25 ENERGY STORAGE↗
DOE OSTI2022

High throughput discovery of enhanced visible photoactivity in Fe–Cr vanadate solar fuels photoanodes

Metal oxide solar absorbers are well suited for photoelectrochemical applications where requisite properties include stability in highly oxidizing environments, in addition to solar energy conversion. Metal vanadates are of particular interest due to their relatively low band gap energies compared to traditional, wide-gap photocatalysts. Concerted efforts on BiVO 4 -based photoanodes have revealed multiple avenues for improving the solar conversion efficiencies for photon energies above 2.5 eV but have not addressed the ultimate performance limitations from the undesirably high band gap energy. Fe and Cr vanadates have a lower band gap and thus a higher potential solar conversion efficiency, although to-date the absorbed 2–2.5 eV photons are not effectively converted to the desired anodic photocurrent. By using combinatorial synthesis and high throughput screening, we demonstrate that cation substitutions with the monoclinic MVO 4 phase (M = Cr, Fe) improves the utilization of photons in this energy range. Given the portfolio of photoanode improvement techniques available, we suggest optimization of (Cr 0.5 Fe 0.5 )VO 4 -based photoanodes as a promising path for enable solar fuel technologies.

14 SOLAR ENERGY↗
DOE OSTI2024

Physiological Adaptations to Progressive Endurance Exercise Training in Adult and Aged Rats: Insights from the Molecular Transducers of Physical Activity Consortium (MoTrPAC)

While regular physical activity is a cornerstone of health, wellness, and vitality, the impact of endurance exercise training on molecular signaling within and across tissues remains to be delineated. The Molecular Transducers of Physical Activity Consortium (MoTrPAC) was established to characterize molecular networks underlying the adaptive response to exercise. Here, we describe the endurance exercise training studies undertaken by the Preclinical Animal Sites Studies component of MoTrPAC, in which we sought to develop and implement a standardized endurance exercise protocol in a large cohort of rats. To this end, Adult (6-mo) and Aged (18-mo) female (n = 151) and male (n = 143) Fischer 344 rats were subjected to progressive treadmill training (5 d/wk, ~70%–75% VO 2 max) for 1, 2, 4, or 8 wk; sedentary rats were studied as the control group. A total of 18 solid tissues, as well as blood, plasma, and feces, were collected to establish a publicly accessible biorepository and for extensive omics-based analyses by MoTrPAC. Treadmill training was highly effective, with robust improvements in skeletal muscle citrate synthase activity in as little as 1–2 wk and improvements in maximum run speed and maximal oxygen uptake by 4–8 wk. For body mass and composition, notable age- and sex-dependent responses were observed. This work in mature, treadmill-trained rats represents the most comprehensive and publicly accessible tissue biorepository, to date, and provides an unprecedented resource for studying temporal-, sex-, and age-specific responses to endurance exercise training in a preclinical rat model.

60 APPLIED LIFE SCIENCES↗
DOE OSTI2022

Exponential Escape Rate of Filamentary Incubation in Mott Spiking Neurons

Mott materials such as vanadium oxides, when subject to a strong applied voltage, present an inhomogeneous insulator-to-metal transition with formation of metallic filaments within the insulating bulk. This property is enabling the development of compact and power-efficient neuromorphic devices known as Mott neurons. However, the nature of the transition has not been fully understood yet, as it may be attributed to different effects, including Joule self-heating and hot-carrier injection. Moreover, the experimental determination of the threshold voltage needed to induce the transition has proven to be challenging, as the transition becomes increasingly unpredictable when the threshold is approached. The physical understanding of these issues would not only deepen our understanding of Mott insulators, but would also be an important step toward the realization of neuromorphic devices based on such materials. In this work we use numerical simulations based on the Mott resistor network model to study the nature of the filament incubation and formation process. Here, we show that both electronic and thermal effects, in the form of current density focusing and Joule self-heating, respectively, contribute to the filamentary incubation and growth. Remarkably, we find that the percolation of the metallic filaments near the threshold is intrinsically stochastic, qualitatively similar to the familiar Arrhenius activated behavior and to the stochastic firing of biological neurons. More precisely, we characterize the filament percolation as a Poisson point process, which has the same probability distribution as mathematical models of neuronal firing with an exponential escape rate. Finally, we support the numerical simulation results by performing experiments in VO 2 that are in agreement with the exponential escape rate behavior. Thus, we establish a functionality of Mott insulators that opens a path toward implementing neuromorphic hardware with quantum materials.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2025

Compressing Hamiltonians with ab initio downfolding for simulating strongly-correlated materials on quantum computers

The accurate first-principles description of strongly correlated materials is an important and challenging problem in condensed matter physics. Ab initio downfolding has emerged as a way of deriving compressed many-body Hamiltonians that maintain the essential physics of strongly correlated materials. The solution of these material-specific models is still exponentially difficult to generate on classical computers, but quantum algorithms allow for a significant speed-up in obtaining the ground states of these compressed Hamiltonians. Here, we demonstrate that using quantum algorithms to obtain the properties of downfolded Hamiltonians can indeed yield high-fidelity solutions. By combining ab initio downfolding and variational quantum eigensolvers, we correctly predict the antiferromagnetic state of one-dimensional cuprate Ca 2 Cu O 3 , the excitonic ground state of monolayer W Te 2 , and the charge-ordered state of correlated metal Sr VO 3 . Numerical simulations using a classical tensor network implementation of variational quantum eigensolvers allow us to simulate large models with up to 54 qubits and encompassing up to four bands in the correlated subspace, which is indicative of the complexity that our framework can address. Through these methods we demonstrate the potential of classical preoptimization and downfolding techniques for enabling efficient materials simulation using quantum algorithms.

Alvertis, Antonios M. [NASA, Ames; LBNL, Berkeley]↗
DOE OSTI2020

Spinodal electronic phase separation during insulator-metal transitions

Electronic phase transitions such as insulator-metal transitions are common in strongly correlated systems. Here, using a combination of thermodynamic linear-stability analysis and phase-field simulations and employing VO 2 as a prototypical example, we predict that an insulator-metal transition driven by photoexcitation may involve an intermediate, modulated charge density state with a temperature-dependent characteristic wavelength. It is shown that such an intermediate two-phase electronic state is formed through a spinodal mechanism and that its formation can be generic for insulator-metal transitions driven by fast stimuli. This transient electronic phase separation is expected to stimulate future experimental and computational efforts.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Dynamics of voltage-driven oscillating insulator-metal transitions

Recent experiments demonstrated emerging alternating insulator and metal phases in Mott insulators actuated by a direct bias voltage, leading to oscillating voltage outputs with characteristic frequencies. Here, we develop a physics-based nonequilibrium model to describe the dynamics of oscillating insulator-metal phase transitions and experimentally validate it using a VO 2 device as a prototype. The oscillation frequency is shown to scale monotonically with the bias voltage and series resistance and terminate abruptly at lower and upper device-dependent limits, which are dictated by the nonequilibrium carrier dynamics. Here, we derive an approximate analytical expression for the dependence of the frequency on the device operating parameters, which yields a fundamental limit to the frequency and may be utilized to provide guidance to potential applications of insulator-metal transition materials as building blocks of brain-inspired non-von Neumann computers.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Phase-field model of coupled insulator-metal transitions and oxygen vacancy redox reactions

A predominant ubiquitous feature of strongly correlated oxides is the possible presence of oxygen vacancies, which has recently been shown to have profound effects on their electronic phase transitions. Here, we formulate a comprehensive phase-field model of intercoupled insulator-metal transitions and oxygen vacancy redox reactions, taking into account the valence electron state of oxygen vacancies. We use the model to study the voltage self-oscillation phenomenon in a prototypical strongly correlated oxide, VO 2 , and discover the mutual activation of the insulator-metal transition and oxygen vacancy redox reactions leading to systematic enhancement of the oscillation frequency. Furthermore, the established methodology and the mutual activation mechanism are generally applicable to understanding any insulator-metal transition dynamics in oxygen-deficient correlated oxides and improving the performance of voltage self-oscillation-based artificial neurons.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Coupling strongly correlated electron systems to a tunable electronic reservoir

Here, we study the effect of coupling an electronic reservoir to a Hubbard model and to a dimer Hubbard model. This is motivated by recent experiments on the effect of illumination on the insulator-metal transition in a vanadium oxides and photoconductive cadmium sulfide heterostructure. We model the system as an electronic reservoir hybridized to the correlated system. We assume that the light intensity controls the hybridization coupling strength. We find that the light intensity acts similarly as the temperature in the weak interaction regime. This is consistent with the role played by electronic reservoirs in out-of-equilibrium systems. In contrast, qualitative differences appear at strong coupling. We show that modeling the V 2 ⁢O 3 compound with a Hubbard model, our results describe qualitatively well the observed illumination-driven suppression of the insulator-metal transition. In contrast, in the DHM results fail to capture the mild suppression observed in the case of VO 2 . This indicates that the lattice may play an important role in this case.

Materials Science↗
DOE OSTI2024

Disorder-induced local strain distribution in Y-substituted TmVO 4

We report an investigation of the effect of substitution of Y for Tm in Tm 1-x ⁢Y x VO 4 via low-temperature heat capacity measurements, with the yttrium content x varying from 0 to 0.997. Because the Tm ions support a local quadrupolar (nematic) moment, they act as reporters of the local strain state in the material, with the splitting of the ion's non-Kramers crystal field ground state proportional to the quadrature sum of the in-plane tetragonal symmetry-breaking transverse and longitudinal strains experienced by each ion individually. Analysis of the heat capacity, therefore, provides detailed insights into the distribution of local strains that arise as a consequence of the chemical substitution. These local strains suppress long-range quadrupole order for x > 0.22, and result in a broad Schottky-like feature for higher concentrations. Heat capacity data are compared to expectations for a distribution of uncorrelated (random) strains. For dilute Tm concentrations, the heat capacity cannot be accounted for by randomly distributed strains, demonstrating the presence of significant strain correlations between sites. For intermediate Tm concentrations, these correlations must still exist, but the data cannot be distinguished from that which would be obtained from a two-dimensional Gaussian distribution. The crossover between these limits is discussed in terms of the interplay of key lengthscales in the substituted material. Furthermore, the central result of this work, namely that local strains arising from chemical substitution are not uncorrelated, has implications for the range of validity of theoretical models based on random effective fields that are used to describe such chemically substituted materials, particularly when electronic nematic correlations are present.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Origin of metal-insulator transitions in the parent compounds of ruthenium-pnictide superconductors

Here we study the interplay of the structural phase transition, flat electronic band dispersion, and metal-to-insulator transition (MIT) in the parent compounds of the Ru-pnictide superconductors by using first-principles calculations. Our electron and phonon calculations reveal that Ru(P,As) undergo MIT accompanied by orthorhombic to monoclinic distortion at low temperature, but RuSb stays orthorhombic and metallic in agreement with the experimental findings. It is demonstrated that electronic correlation, as treated in DFT + U, DFT + Gutzwiller, and dynamical mean-field theory (DMFT), cannot induce MIT in the undistorted crystal structure. We find that, although small monoclinic distortion can remove the van Hove singularity at the Fermi level, it does not immediately gap out the Fermi surface and a large value of monoclinic distortion is necessary for a clear MIT, suggesting the possibility of an intermediate pseudogapped monoclinic metallic phase. Furthermore, we predict a light-induced two-step insulator-to-metal and structural transitions in the monoclinic phases of RuP and RuAs, which can be tested in future ultrafast pump-probe experiments as an alternative ideal playground to VO 2 .

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

High-precision mass measurements of the isomeric and ground states of 44 V: Improving constraints on the isobaric multiplet mass equation parameters of the A=44, 0 + quintet

Background: The quadratic isobaric multiplet mass equation (IMME) has been very successful at predicting the masses of isobaric analog states in the same multiplet, while its coefficients are known to follow specific trends as functions of mass number. The Atomic Mass Evaluation 2016 [Chin. Phys. C 41, 030003 (2017)] 44 V mass value results in an anomalous negative c coefficient for the IMME quadratic term; a consequence of large uncertainty and an unresolved isomeric state. The b and c coefficients can provide useful constraints for construction of the isospin-nonconserving Hamiltonians for the pf shell. In addition, the excitation energy of the 0 + , T = 2 level in 44 V is currently unknown. This state can be used to constrain the mass of the more exotic 44 Cr. Purpose: The aim of the experimental campaign was to perform high-precision mass measurements to resolve the difference between 44 V isomeric and ground states, to test the IMME using the new ground state mass value and to provide necessary ingredients for the future identification of the 0 + , T = 2 state in 44 V. Method: High-precision Penning trap mass spectrometry was performed at LEBIT, located at the National Superconducting Cyclotron Laboratory, to measure the cyclotron frequency ratios of [ 44g,m VO] + versus [ 32 SCO] + , a well-known reference mass, to extract both the isomeric and ground state masses of 44 V. Results: The mass excess of the ground and isomeric states in 44 V were measured to be -23 804.9(80) keV/c 2 and -23 537.0(55) keV/c 2 , respectively. This yielded a new proton separation energy of S p = 1 773(10) keV. Conclusion: The new values of the ground state and isomeric state masses of 44 V have been used to deduce the IMME b and c coefficients of the lowest 2 + and 6 + triplets in A = 44. The 2 + c coefficient is now verified with the IMME trend for lowest multiplets and is in good agreement with the shell-model predictions using charge-dependent Hamiltonians. The mirror energy differences were determined between 44 V and 44 Sc, in line with isospin-symmetry for this multiplet. Finally, the new value of the proton separation energy determined, to an uncertainty of 10 keV, will be important for the determination of the 0 + , T = 2 state in 44 V and, consequently, for prediction of the mass excess of 44 Cr.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2023

Comment on “Anisotropic Scattering Caused by Apical Oxygen Vacancies in Thin Films of Overdoped High-Temperature Cuprate Superconductors”

The comment is on the article published in Vol. 128, Iss. 13 — 1 April 2022, https://journals.aps.org/prl/abstract/10.1103/PhysRevLett.128.137001. In Ref. 1, Wang et al. address an important problem in the overdoped cuprates, taking the first steps toward understanding the structure of real defects in these materials, in this case the apical oxygen vacancy, VO, that sits immediately above the planar Cu. However, the approach taken has some issues, which we outline in this Comment

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Quantum and classical spin dynamics across temperature scales in the S = 1 / 2 Heisenberg antiferromagnet

Using the framework of semiclassical Landau-Lifshitz dynamics (LLD), we conduct a systematic investigation of the temperature-dependent spin dynamics in the S = 1 / 2 Heisenberg square-lattice antiferromagnet (SAFM). By performing inelastic neutron scattering measurements on Zn 2 VO ( PO 4 ) 2 (ZVPO) and corresponding finite-temperature spin dynamics simulations based on LLD, we present a comprehensive analysis that bridges quantum and classical spin dynamics over a broad temperature range. First, remarkable agreement between experimental data and LLD simulations is found in the paramagnetic phase of ZVPO, demonstrating the capability of LLD in accurately determining the spin Hamiltonian of S = 1 / 2 systems and capturing the quantum-to-classical crossover of their spin dynamics. Second, by analyzing the discrepancies between the experimental data and the LLD simulations at lower temperatures, we determine the experimental temperature dependence of the quantum effects in the excitation spectrum of the S = 1 / 2 SAFM: the quantum renormalization factor for the magnon energies and the quantum continuum above the one-magnon bands. Notably, the emergence of each quantum effect is found to correlate with the formation of three-dimensional long-range order. This work demonstrates the utility of LLD in gaining experimental insights into the temperature-induced modifications of quantum spin dynamics and their convergence towards classical expectations at higher temperatures. This motivates further applications to more challenging quantum antiferromagnets dominated by stronger quantum fluctuations. Published by the American Physical Society 2024

36 MATERIALS SCIENCE↗
DOE OSTI2023

Recent Advancements in Reconfigurable mmWave Devices Based on Phase-Change and Metal Insulator Transition Materials

Chalcogenide Phase Change Materials (PCM) and metal insulator transition (MIT) materials are a group of materials that are capable of switching between low resistance and high resistance states. These emerging materials have been widely used in optical storage media and memory devices. Over the past recent years, there have been interests in exploiting the PCM and MIT materials, especially germanium antimony telluride (GST) alloys and vanadium dioxide (VO 2 ), for radio frequency (RF) applications. The PCM and MIT-based RF devices are expected to bridge the gap between semiconductor switches and microelectromechanical system (MEMS) switches as they combine the low insertion loss performance of MEMS technology and the small size and reliability performance of semiconductor technology. This article presents an overview of the PCM and MIT materials for RF circuits and discusses the recent advancements in reconfigurable millimeter-wave (mmWave) devices based on PCM and MIT materials in depth.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Modeling the Impacts of Material Properties on Oscillatory Neuron Behavior

In this study, neuromorphic computing, which mimics the functions of biological brains, offers improvements in both latency and energy efficiency over typical von Neumann computing architectures. Spiking neural networks can be especially power-efficient because they encode information temporally and can use more sparse electrical inputs. Here, we study the design of volatile memristors (variable resistors with memory) for neuronal devices, with particular consideration toward the feasibility of all-on-chip oscillation using built-in capacitance. We use circuit simulations to model the behavior of oscillator neurons with a range of realistic material properties. We find that energy inputs increase with insulating-phase resistivity, thermal conductivity, and device aspect ratio. However, we also find that the minimum capacitance needed for oscillation decreases with increasing insulating-phase resistivity, which opposes the constraints for power efficiency. Based on published data on NbO 2 , VO 2 , and EuNiO 3 , we find that existing materials can be engineered for all-on-chip spiking using their parasitic capacitance.

36 MATERIALS SCIENCE↗
DOE OSTI2022

X-Ray Induced Chemical Reaction Revealed by In Situ X-Ray Diffraction and Scanning X-Ray Microscopy in 15 nm Resolution

The detection sensitivity of synchrotron-based X-ray techniques has been largely improved due to the ever-increasing source brightness, which has significantly advanced ex situ and in situ research for energy materials such as lithium-ion batteries. However, the strong beam–material interaction arising from the high beam flux can substantially modify the material structure. The beam-induced parasitic effect inevitably interferes with the intrinsic material property, making the interpretation of the experimental results difficult and requiring comprehensive assessments. Here, we present a quantitative study of the beam effect on an electrode material Ag 2 VO 2 PO 4 using four different X-ray characterization methods with different radiation dose rates. The material system exhibits interesting and reversible radiation-induced thermal and chemical reactions, further evaluated under electron microscopy to illustrate the underlying mechanism. Further, the work will provide a guideline for using synchrotron X-rays to distinguish the intrinsic behavior from extrinsic structure change of materials induced by X-rays.

36 MATERIALS SCIENCE↗