THz frequency multiplier chains based on planar Schottky diodes
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Schottky diode multipliers↗
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Results for “Schottky”
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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An 800 GHz broadband planner Schottky balanced doubler
This paper describes the design, fabrication, assembly, testing, and performance both at room temperature and at cryogenic temperatures.
Schottky multiplier terahertz electronics terahert↗
Modification of GaN Schottky Barrier Interfaces Probed by Ballistic-Electron-Emission Microscopy and Spectroscopy
Ballistic-electron-emission microscopy (BEEM) and spectroscopy have been used to investigate the properties of Au/GaN interfaces.
electron transport↗
200 and 400 GHz Schottky Diode Multipliers Fabricated with Integrated Air-Dielectric (Substrateless) Circuitry
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Schottky diode Air-Dielectric Circuitry↗
200 and 400 GHz Schottky diode multipliers fabricated with integrated air-dielectric (substrateless) circuitry
Viewgraph presentation.
Schottky diodes Air-Dielectric Circuitry↗
200, 400 and 800 GHz Schottky diode substrateless multipliers: design and results
Several sub-millimeter doubler circuits have been designed and built using a new fabrication technology.
Schottky diodes multipliers monolithic circuits↗
Analysis and Optimization of Plannar Rectangular T-anode Schottky Barrier Diodes for Submillimeter-wave Multipliers
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semiconductor wafer structure Schottky Barrier Dio↗
Doping-Spike LWIR PtSi Schottky IR Detector Fabricated by Molecular Beam Epitaxy
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PtSi sensor Schottky barrier heights cutoff wavele↗
Fabrication and Characterization of Planar Integrated Schottky Devices For Very High Frequency Mixers
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Planar Intergrated Schottky Devices↗
A high-power wideband cryogenic 200 GHz schottky substrateless multiplier: modeling, design and results
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schottky diode multipliers↗
Novel designs for submillimeter subharmonic and fundamental Schottky mixers
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Schottky mixer subharmonic submillimeter↗
Novel designs for submillimeter subharmonic and fundamental Schottky mixers
To meet requirements for future planetary and astrophysics space missions, new mixers have been designed to take advantage of the frameless GaAs membrane technology developed at JPL.
Schottky mixer subharmonic submillimeter↗
Metal/GaN Schottky Barriers Characterized by Ballistic-Electron-Emission Microscopy and Spectroscopy
Ballistic-electron-emission (BEEM) and spectroscopy have been used to characterize the Pd/GaN and Au/GaN interfaces.
Schottky barriers ballistic-electron-emission micr↗
An 800 GHz broadband planar schottky balanced doubler
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schottky diode mulitipliers↗
THz frequency multiplier chains based on planar Schottky diodes
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Schottky diode multipliers↗
Terahertz Schottky Multiplier Sources
This viewgraph presentation reviews the multiplier source technologies and the status/Performance of THz multiplier sources. An example of a THz application is imaging radar. The presentation reviews areas of requirements for THz sources: (1) Figures of merit, (i.e., Frequency Terahertz for high resolution Bandwidth of at least 15 GHz for high range resolution Efficiency (i.e., minimize power supply requirements) (2) Output power: (i.e., Milliwatts below 800 GHz, 10s of microwatts above 1 THz, 1-2 microwatts near 2 THz (3) Mechanical--stability, compact, low mass (4) Environmental -- radiation, vibration, thermal. Several sources for 0.3 - 2 THz are reviewed: FIR lasers, quantum cascade lasers (QCL), backward-wave oscillator (BWO), and Multiplier sources. The current state of the art (SoA) is shown as Substrateless Technology. It also shows where the SoA is for devices beyond 1 THz. The presentation concludes by reviewing the options for future development, and 2 technology roadmaps
submillimeter wave↗
Displacement Damage Induced Catastrophic Second Breakdown in Silicon Carbide Schottky Power Diodes
A novel catastrophic breakdown mode in reversed biased Silicon carbide diodes has been seen for low LET particles. These particles are too low in LET to induce SEB, however SEB was seen from particles of higher LET. The low LET mechanism correlates with second breakdown in diodes due to increase leakage and assisted charge injection from incident particles. Percolation theory was used to predict some basic responses of the devices, but the inherent reliability issue with silicon carbide have proven challenging.
breakdown↗
Silicon Schottky Diode Safe Operating Area
Vulnerability of a variety of candidate spacecraft electronics to total ionizing dose and displacement damage is studied. Devices tested include optoelectronics, digital, analog, linear bipolar devices, and hybrid devices.
single event effects (SEE)↗