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At least 199 records · Page 11

Parametric decay of plasma waves near the upper-hybrid resonance

An intense X wave propagating perpendicularly to dc magnetic field is unstable with respect to a parametric decay into an electron Bernstein wave and a lower-hybrid wave. A modified theory of this effect is proposed that extends to the high-intensity regime, where the instability rate γ ceases to be a linear function of the incident-wave amplitude. An explicit formula for γ is derived and expressed in terms of cold-plasma parameters. Here, theory predictions are in reasonable agreement with the results of the particle-in-cell simulations presented in a separate publication.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Contribution of the backstreaming ions to the self-magnetic pinch (SMP) diode current

The results presented here were obtained with a self-magnetic pinch (SMP) diode mounted at the front high voltage end of the RITS accelerator. RITS is a Self-Magnetically Insulated Transmission Line (MITL) voltage adder that adds the voltage pulse of six 1.3 MV inductively insulated cavities. The RITS driver together with the SMP diode has produced x-ray spots of the order of 1 mm in diameter and doses adequate for the radiographic imaging of high area density objects. Although, through the years, a number of different types of radiographic electron diodes have been utilized with SABER, HERMES III and RITS accelerators, the SMP diode appears to be the most successful and simplest diode for the radiographic investigation of various objects. Our experiments had two objectives: first to measure the contribution of the back-streaming ion currents emitted from the anode target and second to try to evaluate the energy of those ions and hence the Anode-Cathode (A-K) gap actual voltage. In any very high voltage inductive voltage adder utilizing MITLs to transmit the power to the diode load, the precise knowledge of the accelerating voltage applied on the A-K gap is problematic. This is even more difficult in an SMP diode where the A-K gap is very small (~1 cm) and the diode region very hostile. The accelerating voltage quoted in the literature is from estimates based on the measurements of the anode and cathode currents of the MITL far upstream from the diode and utilizing the para-potential flow theories and inductive corrections. Thus, it would be interesting to have another independent measurement to evaluate the A-K voltage. The diode's anode is made of a number of high-Z metals in order to produce copious and energetic flash x-rays. It was established experimentally that the back-streaming ion currents are a strong function of the anode materials and their stage of cleanness. We have measured the back-streaming ion currents emitted from the anode and propagating through a hollow cathode tip for various diode configurations and different techniques of target cleaning treatment: namely, heating at very high temperatures with DC and pulsed current, with RF plasma cleaning, and with both plasma cleaning and heating. In conclusion, we have also evaluated the A-K gap voltage by energy filtering technique. Experimental results in comparison with LSP simulations are presented.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Visibility and annoyance of the phantom array effect varies with age and history of migraine

The phantom array effect (PAE) is a series of repeated images that may be perceived when a person moves their eyes in large saccades across a light source (or a specular reflection of that light source) that is modulating in output over time. Fifty-five people, including a group of 25 who experience migraine, evaluated the visibility and annoyingness of phantom arrays produced by 85 unique temporal light modulation waveforms (including sine, rectangular, complex and DC waveforms) generated using an LED placed against a black background. Those with migraine exhibited higher average visibility compared to those without migraine ( p = 0.019) and were relatively more sensitive at higher frequencies ( p < 0.001). Younger participants also found more stimuli to be visible ( p < 0.001). The threshold sensitivity function was similar to that developed for the phantom array visibility measure (PAVM), and PAVM was effective in predicting visibility ( R 2 = 0.87 for the relevant region of PAVM < 3). While those in the migraine group did not report seeing the PAE more often in everyday life at a statistically significant level, they reported being more annoyed by it and having more unwanted physiological responses (headaches, eye fatigue and distraction/disorientation). Members of the migraine group were also more likely to have changed their behaviour in architectural spaces (such as leaving a restaurant with ‘flickering’ lights). In the four hours after completing the experiment, 64% of the migraine group (vs. 19% of the non-migraine group) reported experiencing discomfort or an adverse reaction. In particular, 41% reported experiencing a headache (vs. 8% for those in the non-migraine group).

60 APPLIED LIFE SCIENCES↗

Shell-mediated control of surface chemistry of highly stoichiometric magnetite nanoparticles

Magnetite (Fe 3 O 4 ) nanoparticles are one of the most studied nanomaterials for different nanotechnological and biomedical applications. However, Fe 3 O 4 nanomaterials gradually oxidize to maghemite (γ-Fe 2 O 3 ) under conventional environmental conditions leading to changes in their functional properties that determine their performance in many applications. Here we propose a novel strategy to control the surface chemistry of monodisperse 12 nm magnetite nanoparticles by means of a 3 nm-thick Zn-ferrite epitaxial coating in core/shell nanostructures. We have carried out a combined Mössbauer spectroscopy, dc magnetometry, X-ray photoelectron spectroscopy and spatially resolved electron energy loss spectroscopy study on iron oxide and Fe 3 O 4 /Zn 0.6 Fe 2.4 O 4 core/shell nanoparticles aged under ambient conditions for 6 months. Our results reveal that while the aged iron oxide nanoparticles consist of a mixture of γ-Fe 2 O 3 and Fe 3 O 4 , the Zn-ferrite-coating preserves a highly stoichiometric Fe 3 O 4 core. Therefore, the aged core/shell nanoparticles present a sharp Verwey transition, an increased saturation magnetization and the possibility of tuning the effective anisotropy through exchange-coupling at the core/shell interface. The inhibition of the oxidation of the Fe 3 O 4 cores can be accounted for in terms of the chemical nature of the shell layer and an epitaxial crystal symmetry matching between the core and the shell.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Ladderlike optical conductivity in the spin-fermion model

In the nested limit of the spin-fermion model for the cuprates, one-dimensional physics in the form of half-filled two-leg ladders emerges. We show here that the renormalization group flow of the corresponding ladder is towards the $d$-Mott phase, a gapped spin-liquid with short-ranged $d$-wave pairing correlations, and reveals an intermediate $\mathrm{SO}(5)\times{}\mathrm{SO}(3)$ symmetry. We use the results of the renormalization group in combination with a memory-function approach to calculate the optical conductivity of the spin-fermion model in the high-frequency regime, where processes within the hot spot region dominate the transport. We argue that umklapp processes play a major role. For finite temperatures, we determine the resistivity in the zero-frequency (dc) limit. Our results show an approximate linear temperature dependence of the resistivity and a conductivity that follows a nonuniversal power law. A comparison to experimental data supports our assumption that the conductivity is dominated by the antinodal contribution above the pseudogap.

1-dimensional systems↗

Gastrodin inhibits osteoclastogenesis via down-regulating the NFATc1 signaling pathway and stimulates osseointegration in vitro

Bone is a rigid yet dynamic organ, and this dynamism is mediated by the delicate balance between osteoclastic bone resorption and osteoblastic bone formation. However, excessive activation of osteoclasts is responsible for many bone diseases such as osteoporosis, Paget disease, and tumor bone metastasis. Agents that could inhibit osteoclast formation or function are regarded as promising alternatives to treat osteoclast-related diseases. Recently, traditional Chinese medicine has attracted attention because of its multiple activities in bone metabolism. Among them, gastrodin has been reported as an anti-osteoporosis agent that reduces reactive oxygen species. However, the direct action of gastrodin on osteoclast differentiation and bone resorption, and its underlying molecular mechanism, remain unknown. In this study, we investigated the effects of gastrodin on receptor activator NF-κB ligand (RANKL)-activated osteoclasts formation and bone resorption. Our results showed that gastrodin retarded RANKL-induced osteoclast differentiation efficiently by downregulating transcriptional and translational expression of nuclear factor of activated T cells cl (NFATc1), a major factor in RANKL-mediated osteoclastogenesis. Meanwhile, gastrodin prevented osteoclast maturation and migration by inhibiting the gene expression of dendrocyte expressed seven transmembrane protein (DC-STAMP), an osteoclastic-specific gene that controls cells fusion and movement. And gastrodin prevented RANKL-induced osteoclastic bone erosion in vitro. In addition, gastrodin also stimulated bone mesenchymal stem cell (BMSC) spreading and osseointegration in titanium plate. In summary, gastrodin could prevent osteoclasts formation and bone resorption via blockage of NFATc1 activity, and stimulate osseointegration in vitro. Gastrodin could be developed as a potent phytochemical candidate to treat osteolytic diseases. - Highlights: • Gastrodin suppresses osteoclasts formation and function in vitro. • Gastrodin impairs NFATc1 activation. • Gastrodin stimulates osseointegration in vitro. • Gastrodin may be used for treating osteoclast related diseases.

60 APPLIED LIFE SCIENCES↗

High kinetic inductance NbTiN superconducting transmission line resonators in the very thin film limit

Here, we examine the DC and radio frequency (RF) response of superconducting transmission line resonators comprised of very thin NbTiN films, <12 nm in thickness, in the high-temperature limit, where the photon energy is less than the thermal energy. The resonant frequencies of these superconducting resonators show a significant nonlinear response as a function of RF input power, which can approach a frequency shift of Δf=-0.15% in a -20 dB span in the thinnest film. The strong nonlinear response allows these very thin film resonators to serve as high kinetic inductance parametric amplifiers.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

A Simple Space Vector Modulation of High-Frequency AC Linked Three-Phase-to-Single-Phase/DC Converter

High frequency (HF) ac linked converter functions well to interface between buses with different voltage types. Using a three-phase-to-single-phase matrix converter, a single-phase cyclo converter, and a HF transformer, we can compose a HF ac linked converter to interface between three-phase ac grids and single-phase ac or dc distributed generations (DGs). In this paper, a novel space vector modulation (SVM) method is proposed for such kind of converter. The proposed SVM method converts the mains three-phase ac voltage to a HF ac voltage at the primary side of transformer, and then unfolds the HF ac voltage to a single-phase ac or dc voltage at the secondary side of transformer. Without need to compute separate switching signals for the primary and secondary converters and then coordinate their operations elaborately, the proposed SVM method can be easily implemented by incorporating the HF chopping into the SVM of traditional indirect matrix converter. Therefore, no complicated duty cycle computation or elaborate switching states combination is required. Simulation and hardware-in-loop implementation demonstrate the validity of the proposed method.

42 ENGINEERING↗

Transitions, Dynamics, and Driven States in Quantum Magnets (Final Report Revised)

Transitions into unusual electronic, optical, and magnetic states at the absolute zero of temperature display special properties that teach us about fundamental quantum mechanics and also underlie important technologies. These so-called quantum phase transitions intertwine the static and dynamical responses of the materials changing state. They are extremely sensitive to the effects of disorder and etch in high relief the role of quantum fluctuations. There are ample questions remaining about the character of such transitions and the nature of the competing quantum states. There are also opportunities to drive quantum materials out of equilibrium, with the possibility of new types of correlated and coherent order, and new ways to access the dynamical evolution of ground and excited states. We have investigated how the order develops in time and space, and the nature of the final configurations. We are able to compare and contrast classical and quantum excitations in our experimental system of choice, and thereby can trace the relative speed by which the system settles into its lowest-energy ground state. This comparison of quantum and classical annealing protocols lies at the heart of strategies for harnessing the power of quantum computers dedicated to optimization problems. A combination of magnetic susceptibility measurements at finite frequency where the magnetic spins are queried by an external ac field, dc magnetometry measurements that characterize the macroscopic strength of magnetic order and its resistance to change, noise measurements that reveal the microscopic fluctuations of the spins as they prepare to change state, and microwave spectroscopy to look at the response of both the electronic and nuclear degrees of freedom, have been performed as functions of temperature, magnetic field, frequency, excitation amplitude, magnetic spin concentration, and disorder. This combination of probes addresses issues of stability over time, overlap between spin states, the ability of the spins to respond independently or coherently, and the promise of control on the nanometer length scale. The research reported here provides insights into fundamental quantum physics. It also addresses the question of how best to use complex systems, such as magnetic solids, to stably process quantum information.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Vertical GaN Superjunction Diode on Sapphire with Kilovolt Dynamic Breakdown Voltage

The development of superjunction structures for use in vertical wide bandgap power devices promise to break the 1-D material limits. Additionally, the possibility of utilizing heteroepitaxial GaN-on-Sapphire wafer for vertical devices can significantly trim the material and device cost. This work introduces a quasi-vertical GaN-on-Sapphire superjunction PN diode design utilizing sputtered p-NiO on the etched GaN fins for superjunction formation. DC breakdown voltage is shown to vary with superjunction charge imbalance and significantly exceed the expected 1-D planar limit of 350V given the epilayer design used. A maximum breakdown voltage of 840 V is extracted for near charge balance conditions limited by leakage current. Dynamic breakdown of the device is characterized as a function of reverse voltage slew rate. A maximum dynamic breakdown voltage of 1160 V under a reverse voltage slew rate of 2000 V/μs is found.

Porter, Matthew↗

Etching of Si 3 N 4 induced by electron beam plasma from hollow cathode plasma in a downstream reactive environment

An etching system based on the interaction of electrons extracted from a direct current (DC) hollow-cathode (HC) Ar plasma and injected towards a Si3N4 covered silicon substrate located in the downstream reactive environment created by an additional remote CF 4 /O 2 plasma source was developed and evaluated. By controlling the properties of the injected beam electrons, this approach allows to deliver energy to a surface functionalized by exposure to reactive species, and initiate surface etching. The energy of the primary beam electrons is controlled by the acceleration voltage relative to the HC discharge. Ar atoms flow from the high-pressure HC discharge into the low pressure downstream reactive environment in the process chamber. For an acceleration voltage greater than the ionization potential of Ar and/or process gas species, the energetic primary beam electrons produce a secondary plasma in the process chamber, and can also cause additional dissociation. We have characterized the properties of the secondary plasma and also surface etching of Si 3 N 4 as a function of process parameters, including acceleration voltage (0-80 V), discharge current of the HC discharge (1-2 A), pressure (3.5-20 mTorr), source to substrate distance (1.5 to 5 cm), and feed gas composition (20% and 80% O2 in CF 4 /O 2 ). The electron energy probability function (EEPF) measured with a Langmuir probe about 2.5 cm below the extraction ring suggests several major groups of electrons for this situation, including high energy primary beam electrons with an energy that varies as the acceleration voltage is changed and low energy electrons produced by beam electron-induced ionization of the Ar gas in the process chamber. When a remote CF 4 /O 2 plasma is additionally coupled to the process chamber, Si 3 N 4 surfaces can be functionalized, and by varying the energy of the beam electrons, Si 3 N 4 etching can be induced by electron-neutral synergy effect with plasma-surface interaction. For conditions without beam electron injection, the remote plasma etching rate (ER) of Si 3 N 4 depends strongly on the O 2 concentration in the CF 4 /O 2 processing gas mixture and can be suppressed for O 2 -rich process conditions by the formation of a SiONF passivation layer on the Si 3 N 4 surface. The combination of the HC electron beam source with the remote plasma source (HCEB-RP) makes it possible to induce Si 3 N 4 etching for O 2 -rich remote plasma conditions where remote plasma by itself produces negligible Si 3 N 4 etching. The electron enhanced etching of Si 3 N 4 depends strongly on O 2 /CF 4 mixing ratio reflecting changing arrival rates of O and F species at the surface. Optical emission spectroscopy was used to estimate the ratio of gas phase F and O densities and found to be controlled by the gas mixing ratio and independent of HC EB operating conditions. At this time the detailed sequence of events operative in the etching mechanism is unclear. While the increase of the electron energy is ultimately responsible for initiating surface etching, at present we cannot rule out a role of ions from the simultaneously produced secondary plasma in plasma surface interaction mechanisms.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Coordinated Thermal Safety Attack and Defense on EV Battery Management Systems

Battery temperature sensor and battery current sensor data which are key sensing inputs to the Battery Management Controllers in electric vehicles, are vulnerable to possible cyber/ physical manipulation due to known vulnerabilities inherited from CAN bus technology that is used for in-vehicle communications between electronic control units that transfer sensing and control data. In this paper, we first create a simulation that enables us to evaluate impact of cyber physical attacks on electric vehicle battery management system in a controlled environment that violates thermal safety. Specifically, we emulate a Level 3 - DC fast charging system with SAE J1772/CCS, integrated with standard charging controls and thermal safety controls on EVs, and various sensing data flows. Second, we propose a coordinated current and battery temperature attack that has crippling economic, and safety impacts. Third, we quantify the usability, economic and safety impacts of such attacks as a function of the extent of data manipulation. Finally, we propose a physics model driven detection technique to detect presence of such attacks.

25 ENERGY STORAGE↗

Optimal Variable Switching Frequency Scheme to Reduce Loss of Single-Phase Grid-Connected Inverter With Unipolar and Bipolar PWM

Reducing the power loss of a converter without increasing its volume or cost in hardware has always been a much sought-after but challenging goal. This article proposes a comprehensive variable switching frequency (VSF) scheme to improve the overall system efficiency while still meeting a given total harmonic distortion (THD) requirement without any hardware changes, achieved only by changes to the controller. In this article, it is analyzed that for the H-bridge inverter, the inductor copper loss and the switch conduction loss are independent of the switching frequency (SF), while the device switching loss and the inductor core loss are functions of the SF. This article aims at weighting the combined switching loss and inductor core loss for both the unipolar and bipolar modulation techniques, with the constraint on the output THD, which, for fixed passive components, is a function of inductor ripple current that in turn depends on the SF. An optimal VSF scheme is devised through rigorous mathematical analysis of the output ripple component and the SF-dependent losses. In each switching cycle, the inductor ripple current is predicted with the circuit parameters, such as duty cycle, switching period, inductance, and dc voltage, and by implementing the VSF scheme, the current ripple is optimally varied such as to satisfy the THD requirement while reducing the SF-dependent losses. A generalized method to design VSF schemes for any topology and specifications is also presented, which would help future users in designing the VSF controller. A 1-kW H-bridge inverter using SiC MOSFETs and powdered iron/ferrite core has been built to validate the theoretical analysis. Both constant SF (CSF) scheme (200 kHz) and optimal VSF scheme with simple controller modification have been implemented in the experimental prototype using DSP TMS320f28335. Compared with the CSF scheme, the optimal VSF scheme shows a significant improvement in the system efficiency at rated power from 94.7%...

conduction loss↗

Electric-Field-Oriented Growth of Long Hair-Like Silica Microfibrils and Derived Functional Monolithic Solids

We present a “bottom-up” fabrication approach to first grow a new class of inorganic (silica) long hair-like microfibers or microwires and then to form monolithic solid pellet that contains parallel arrays of bundled microfibers with a controlled orientation. During the sol-gel solution processing, reactive precursor species are utilized as molecular “building blocks” for the field-directed assembly growth of microfibers driven by an electric field of pulsed direct current (dc) with controlled frequency. In principle, this reactive electrofibrilation process that combines an external field with a solid-phase nucleation and growth process has no limitation on reactions (such as the one here that involves sol-gel reaction chemistry) and on materials compositions (such as the example silica oxide), thus will enable bulk production of long microfibers of wide variety of inorganic materials (other oxides or metals). Furthermore, we have fabricated uniquely architectured monolithic solid materials containing aligned microfibers by “wet press” of the in-situ grown microfiber structure in the electric field. The consolidated monolithic slabs (1 cm x 1 cm x 3 mm) have shown anisotropic properties and desirable retention of DNA molecule fragments, thus, could serve as a platform stationary-phase materials for future development of capillary electrochromatography for biomolecule separations.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Implicit and coupled fluid plasma solver with adaptive Cartesian mesh and its applications to non-equilibrium gas discharges

In this work, we present a new fluid plasma solver with adaptive Cartesian mesh (ACM) based on a full-Newton (nonlinear, implicit) scheme for non-equilibrium gas discharge plasma. The electrons and ions are described using drift-diffusion approximation coupled to Poisson equation for the electric field. The electron-energy transport equation is solved to account for electron thermal conductivity, Joule heating, and energy loss of electrons in collisions with neutral species. The rate of electron-induced ionization is a function of electron temperature and could also depend on electron density (important for plasma stratification). The ion and gas temperature are kept constant. The transport equations are discretized using a non-isothermal Scharfetter-Gummel scheme to resolve possible large temperature gradients in the sheaths. We demonstrate the new solver for simulations of direct current (DC) and radiofrequency (RF) discharges. The implicit treatment of the coupled equations allows using large time steps. The full-Newton method (FNM) enables fast nonlinear convergence at each time step, offering significantly improved simulation efficiency. We discuss the selection of time steps for solving different plasma problems. The new solver enables solving several problems we could not solve before with existing software: two- and three-dimensional structures of the entire DC discharges including cathode and anode regions, electric field reversals and double-layer formation, the normal cathode spot and an anode ring, moving striations in diffuse and constricted DC discharges, and standing striations in RF discharges. The developed FNM-ACM technique offers many benefits for tackling the disparity of gas discharge plasma systems' time scales and nonlinearity.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Carbon in GaN as a nonradiative recombination center

Trap-assisted nonradiative recombination has been shown to limit the efficiency of optoelectronic devices. While substitutional carbon (⁠C N ) has been suggested to be a nonradiative recombination center in GaN devices, a complete recombination cycle including the two charge-state transition levels has not been previously described. In this work, we investigate the trap-assisted recombination process due to C N in GaN, including multiphonon emission, radiative recombination, trap-assisted Auger–Meitner (TAAM) recombination as well as thermal emission of holes. Our study shows the key role of TAAM processes at the high carrier densities relevant for devices. We also reveal the carrier-density regimes where thermal emission and radiative recombination are expected to play an observable role. Our results highlight that carbon concentrations exceeding ~10 17 cm −3 can have a noticeable impact on device efficiency, not just in GaN active layers but also in InGaN and AlGaN. Furthermore, our comprehensive formalism not only offers detailed results for carbon but also provides a general framework for assessing the multiple processes that participate in trap-assisted recombination in semiconductors.

36 MATERIALS SCIENCE↗

Search for charged Higgs bosons decaying into a top quark and a bottom quark at $\sqrt{s}$ = 13 TeV with the ATLAS detector

A search for charged Higgs bosons decaying into a top quark and a bottom quark is presented. The data analysed correspond to 139 fb -1 of proton-proton collisions at $\sqrt{s}$ = 13 TeV, recorded with the ATLAS detector at the LHC. The production of a heavy charged Higgs boson in association with a top quark and a bottom quark, pp → tbH + → tbtb, is explored in the H + mass range from 200 to 2000 GeV using final states with jets and one electron or muon. Events are categorised according to the multiplicity of jets and b-tagged jets, and multivariate analysis techniques are used to discriminate between signal and background events. No significant excess above the background-only hypothesis is observed and exclusion limits are derived for the production cross-section times branching ratio of a charged Higgs boson as a function of its mass; they range from 3.6 pb at 200 GeV to 0.036 pb at 2000 GeV at 95% confidence level. The results are interpreted in the hMSSM and M$_{h}^{125}$ scenarios.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Quinonoid radial π-conjugation

Radially π-conjugated macrocycles with mixed aromatic and quinonoid units display a level crossing as a function of composition. Near the level crossing with a specific composition a triplet biradical state is more stable than the singlet.

Bhattacharjee, Rameswar [Department of Chemistry a↗