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At least 199 records · Page 11
All sourcesNASA NTRSDOE OSTI
NASA NTRSDate not supplied

Low-Loss Thin-Film Al-On-Si Microwave Resonators for Astronomy Applications Designing and Characterizing the Next Generation of Microwave Detectors

We present measurements of prototype thin film Al microwave kinetic inductance detectors (MKIDs) intended for application in the sub-mm astronomy balloon experiment EXCLAIM. The device we show is dark, or non-optically coupled, and contains 16 coplanar waveguide (CPW) resonators etched into a 261 nm sputter deposited Al layer on a Si wafer. The resonators span the f0 = 3.5 - 4 GHz range, and include both lambda=2 and lambda=4 resonators. Each resonator is coupled to the feedline using one of three alternating coupling designs. We performed transmission line measurements of the device for a series of excitation powers ranging from -90 dBm to -30 dBm, and at a series of base temperatures ranging from 73 mK to 400 mK. We observed quality factors of up to Qi  107 at a base temperature of 73 mK. The lambda=2 and lambda=4 resonators performed similarly, achieving comparable Qi values. The results of these measurements are actively informing the fi nal design of the EXCLAIM instrument. EXCLAIM will incorporate six spectrometers, each containing an array of over 300 resonators in the 420-540 GHz range.

Carrie Volpert↗
NASA NTRSDate not supplied

A Dual Linear/Circular Polarized Wideband Flat Panel Phased Array Antenna for K/Ka-band 6U CubeSat Communications Applications

Circular polarized (CP) electromagnetic waves are preferred for space-to-space and space-to-ground satellite communications (SATCOM). CubeSats with 6U sizes (1U represents a 10 cm x 10 cm x 10 cm), that will rotate together with the Moon as it orbits Earth require high gain CP antenna systems to maintain reliable communication links. Here, we have designed an 8x8 dual linear and dual circularly polarized phased array antenna (PAA) aperture that offers 22-28 GHz bandwidth, with maximum gain of 23 dBic, and beam scanning capability of ±50o with acceptable axial ratio over all scan angles. A stacked patch topology is selected to achieve wide impedance bandwidth. Each driven patch has two via feed point locations that are connected to grounded coplanar waveguide (CPW) feed structures. By utilizing phase shifters from the Anokiwave RFICs (AWMF-0165) employed for the beamforming network (BFN), we have generated both dual linear polarization and dual circular polarization in each patch. Each driven and parasitic patch is innovatively shaped to achieve excellent isolation between two feed points which, in turn, leads to low cross polarization, high efficiency and good axial ratio over the entire bandwidth. Each chip has eight outputs which feed one 2x2 sub-array consisting of four dual linear or dual circularly polarized driven patches, simultaneously. Each 2x2 sub-array of the 8x8 array are sequentially rotated which improves axial ratio performance when the antenna operates in the dual circularly polarized mode. By utilizing a mirror effect, cross-polarized fields are also improved when operated in a dual linear polarized mode. The 8x8 array aperture is simulated taking into account the effect of the multilayer printed circuit board (PCB) stack-up of the BFN and co-simulated with the power splitter outputs and chip outputs and results are compared with only passive array performance. The performance of the antenna is still excellent when non-ideal chip performances are included in the simulation analysis. The fabricated array will be tested for radiation patterns in the Antenna and Microwave Laboratory (AML) of the San Diego State University and the NASA Glenn Research Center (GRC) spherical near field chambers. The design of the 8x8 antenna array with BFN layout is shown in Fig. 1.

5G↗
NASA NTRSDate not supplied

Kids Making Noise: Presenting Noise Spectra of Aluminum MKIDS for Astronomy

Since the field has identified microwave kinetic inductance detectors (MKIDs) as a competitive candidate for future applications in infrared and sub-millimeter wave detection, it is increasingly important to establish the materials and techniques that produce highly sensitive, well-understood, and consistent detectors. We present new noise power spectral density (PSD) measurements for several thin film (25nm) aluminum coplanar waveguide (CPW) microwave resonators. We include noise PSD measurements for several bath temperatures and photon occupation numbers. We examine the trends exhibited by the fractional frequency noise spectra of our detectors at 1 kHz as a function of bath temperature and power. For our lowest temperature data (58mK) and a readout power of -84 dBm we observe fractional frequency noise in the range Sбf / f r 2 = a few x10 -17 . We observe a roughly Sбf / f r 2 (1 kHz) ∝ Pint -0.5 relationship between internal power and fractional frequency noise at 1 kHz. We attempted more complex fits to the PSDs, but concluded that more measurements are needed to converge on meaningful fits to the data.

MKIDs↗
DOE OSTI2025

Comparison of Nb and Ta Pentoxide Loss Tangents for Superconducting Quantum Devices

Superconducting transmon qubits are commonly made with thin-film Nb wiring, but recent studies have shown increased performance with Ta wiring. In this work, we compare the resonator-induced single photon, millikelvin dielectric loss for pentoxides of Nb (Nb2O5) and Ta (Ta2O5) in order to further understand limiting losses in qubits. Nb and Ta pentoxides of three thicknesses are deposited via pulsed laser deposition onto identical coplanar waveguide resonators. The two-level system (TLS) loss in Nb2O5 is determined to be about 30% higher than that of Ta2O5. This work indicates that qubits with Nb wiring are affected by higher loss arising from the native pentoxide itself, likely in addition to the presence of suboxides, which are largely absent in Ta.

Goronzy, D. P. [Northwestern U.]↗
DOE OSTI2026

Precise 2D electric field density simulations for superconducting quantum devices

Dielectric loss due to two-level systems is a limiting factor for superconducting qubit relaxation times. These losses arise mostly from nanometer-scale interfacial defect regions in superconducting devices with planar dimensions of microns to millimeters, thus making it resource intensive to accurately simulate the electric field density in these regions with traditional electromagnetic solvers. In this work, we demonstrate a fast boundary integral equation solver that allows precise simulation of electric field density in these thin regions, showing a speedup of around two orders of magnitude over traditional solvers, with relative errors around $10^{-7}$ for a ten-minute solution runtime. By computing participation ratios through Green's first identity without squaring the electric field, our approach is less susceptible to the field singularities near conductor corners. We apply this solver to a basic untrenched coplanar waveguide cross-section, showing that the common assumption of participation ratio linearity with dielectric constant holds well for some interfaces and not others; in particular, while the metal-air (MA) top and corner follow this linear relationship strongly, the MA sidewall does not. We then compare isotropic and anisotropic etching, showing that the MA sidewall and the metal-air-substrate triple junction are the most strongly affected. We are currently leveraging this solver to explore geometries that will uniquely isolate the participation ratios of the different dielectrics. Finally, we are working to combine this solver framework with a full 3D microwave solver to accurately calculate participation ratios for the thin dielectrics that are known sources of loss in superconducting qubits.

Gimbutas, Z. [NIST, Boulder] (ORCID:00000003320982↗
DOE OSTI2025

Meter-scale High-temperature Superconducting RF Waveguides with Integrated Filters and Attenuators

Here, we report the performance of coplanar, multifilament waveguides manufactured from crystalline films of a well-known HTS compound, YBCO, transferred to a low-loss dielectric substrate, such as E-Kapton. The coplanar two-line waveguide delivers low cross-talk, below 20 dB level, and low attenuation, below 4 dB/m at 6 GHz, 77 K. Controlled-impedance 50 Ω waveguides would require a method for reliable patterning narrow, less than 100-micron wide, YBCO traces over a meter length. We report a lithography-etching approach that minimizes the difference in the etching rate of YBCO and the metallization layers of Ag and Cu. An array of metalized vias isolates the traces. We describe the via metallization process that is not damaging to YBCO and compatible with dense, 2 mm period, arrays of vias.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Efficient on-chip terahertz generation and detection with GaN photoconductive emitters

Photoconductive emitters for terahertz generation hold promise for highly efficient down-conversion of optical photons because it is not constrained by the Manley-Rowe relation. Existing terahertz photoconductive devices, however, faces limits in efficiency due to the semiconductor properties of commonly used GaAs materials. Here, we demonstrate that large bandgap semiconductor GaN, characterized by its high breakdown electric field, facilitates the highly efficient generation of terahertz waves in a coplanar stripline waveguide. Towards this goal, we investigated the excitonic contribution to the electro-optic response of GaN under static electric field both through experiments and first-principles calculations, revealing a robust excitonic Stark shift. Using this electro-optic effect, we developed a novel ultraviolet pump-probe spectroscopy for in-situ characterization of the terahertz electric field strength generated by the GaN photoconductive emitter. Our findings show that terahertz power scales quadratically with optical excitation power and applied electric field over a broad parameter range. We achieved an optical-to-terahertz conversion efficiency approaching 100% within the 0.03–1 THz bandwidth at the highest bias field (116 kV/cm) in our experiment. Further optimization of GaN-based terahertz generation devices could achieve even greater optical-to-terahertz conversion efficiencies.

Uzundal, Can B↗
DOE OSTI2021

Effect of Controlled Artificial Disorder on the Magnetic Properties of EuFe 2 (As 1– x P x ) 2 Ferromagnetic Superconductor

Static (DC) and dynamic (AC, at 14 MHz and 8 GHz) magnetic susceptibilities of single crystals of a ferromagnetic superconductor, EuFe 2 ( As 1 – x P x ) 2 ( x = 0.23), were measured in pristine state and after different doses of 2.5 MeV electron or 3.5 MeV proton irradiation. The superconducting transition temperature, T c ( H ) , shows an extraordinarily large decrease. It starts at T c ( H = 0 ) ≈ 24 K in the pristine sample for both AC and DC measurements, but moves to almost half of that value after moderate irradiation dose. Remarkably, after the irradiation not only T c moves significantly below the FM transition, its values differ drastically for measurements at different frequencies, ≈16 K in AC measurements and ≈12 K in a DC regime. We attribute such a large difference in T c to the appearance of the spontaneous internal magnetic field below the FM transition, so that the superconductivity develops directly into the mixed spontaneous vortex-antivortex state where the onset of diamagnetism is known to be frequency-dependent. We also examined the response to the applied DC magnetic fields and studied the annealing of irradiated samples, which almost completely restores the superconducting transition. Overall, our results suggest that in EuFe 2 ( As 1 – x P x ) 2 superconductivity is affected by local-moment ferromagnetism mostly via the spontaneous internal magnetic fields induced by the FM subsystem. Another mechanism is revealed upon irradiation where magnetic defects created in ordered Eu 2 + lattice act as efficient pairbreakers leading to a significant T c reduction upon irradiation compared to other 122 compounds. On the other hand, the exchange interactions seem to be weakly screened by the superconducting phase leading to a modest increase of T m (less than 1 K) after the irradiation drives T c to below T m . Our results suggest that FM and SC phases coexist microscopically in the same volume.

36 MATERIALS SCIENCE↗
NASA NTRS1994

Novel Coplanar Stripline to Slotline Transition on High Resistivity Silicon

A novel coplanar stripline (CPS) to slotline transition has been fabricated and characterized on a high resistivity silicon wafer. The CPS and the slotline are on opposite sides of the wafer and are coupled electromagnetically. The coupling takes place at the location were the CPS is terminated in a right angles. The measured average insertion loss and return loss per transition are better than 1.5 and 10 dB, respectively, with a bandwidth greater than 30% at 9.5 GHz.

TRT-EXPERIMENTAL↗
NASA NTRS2001

Traveling-Wave Membrane Photomixers

Traveling-wave photomixers have superior performance when compared with lumped area photomixers in the 1 to 3 THz frequency range. Their large active area and distributed gain mechanism assure high thermal damage threshold and elimination of the capacitive frequency roll-off. However, the losses experienced by the radio frequency wave traveling along the coplanar strips waveguide (due to underlying semi-infinite GaAs substrate) were a serious drawback. In this paper we present device designs and an experimental setup that make possible the realization of photomixers on membranes which eliminate the losses.

Wyss, R. A.↗
NASA NTRS1999

A 90 GHz Amplifier Assembled Using Flip-Chip Technology

This letter reports the performance of a novel single-stage W-band amplifier fabricated utilizing flip-chip bump-bonding. We have bump-bonded a high-speed, low-noise InP high electron mobility transistor (HEMT) device onto a separately fabricated passive circuit having a GaAs substrate.

FET amplifiers Millimeter wave FETs bump-bonding m↗
NASA NTRS2005

Medium power amplifiers covering 90 - 130 GHz for telescope local oscillators

This paper describes a set of power amplifier (PA) modules containing InP High Electron Mobility Transistor (HEMT) Monolithic Millimeter-wave Integrated Circuit (MMIC) chips. The chips were designed and optimized for local oscillator sources in the 90-130 GHz band for the Atacama Large Millimeter Array telescope. The modules feature 20-45 mW of output power, to date the highest power from solid state HEMT MMIC modules above 110 GHz.

coplanar waveguides↗
NASA NTRS1987

General technique for the integration of MIC/MMIC'S with waveguides

A technique for packaging and integrating of a microwave integrated circuit (MIC) or monolithic microwave integrated circuit (MMIC) with a waveguide uses a printed conductive circuit pattern on a dielectric substrate to transform impedance and mode of propagation between the MIC/MMIC and the waveguide. The virtually coplanar circuit pattern lies on an equipotential surface within the waveguide and therefore makes possible single or dual polarized mode structures.

Geller, Bernard D.↗
DOE OSTI2023

Multi-Line Superconducting Waveguides Based on YBCO-on-Kapton Technology

Coplanar (with the ground) and stripline 25 cm long waveguides are manufactured from the YBCO-Kapton material. The waveguides are intended as the key components of a scalable signal delivery for large quantum computing systems and detectors. The waveguide is coupled with an integrated power divider that replaces the standard attenuator. The divider is designed to return most of the power to the previous thermalization stage. The method is projected to reduce the active dissipation by ≈10. We investigate the effect of internal strain in YBCO layer on the device's mechanical stability. Here, we show that adhesives with high stiffness are essential for the reliability of YBCO-Kapton devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS2002

Packaging of microwave integrated circuits operating beyond 100 GHz

Several methods of packaging high speed (75-330 GHz) InP HEMT MMIC devices are discussed. Coplanar wirebonding is presented with measured insertion loss of less than 0.5dB and return loss better than -17 dB from DC to 110 GHz. A motherboard/daughterboard packaging scheme is presented which supports minimum loss chains of MMICs using this coplanar wirebonding method. Split waveguide block packaging approaches are presented in G-band (140-220 GHz) with two types of MMIC-waveguide transitions: E-plane probe andantipodal finline.

HEMT MMICS power amplifiers↗
DOE OSTI2023

High-temperature Superconducting Interconnects for Ultra-low Temperature, High-field Environments

Coplanar (with the ground) 20 cm long waveguides are manufactured from the YBCO-on-Kapton material. We investigate the effect of parasitic ground plane resonances on the performance of these waveguides. Here, it is concluded that dense rows stitching vias are essential for isolating the lines to a level below 60 dB at 6 GHz. We demonstrate a metalized via technology that is compatible with both the traditional Flexible Printed Circuit (FPC) process and the epitaxial YBCO material. Stitching via fence with the via period 10 mm is shown as effective in suppressing parasitic resonances at 77 K.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗