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DOE OSTI2016

User-Assisted Store Recycling for Dynamic Task Graph Schedulers

The emergence of the multi-core era has led to increased interest in designing effective yet practical parallel programming models. Models based on task graphs that operate on single-assignment data are attractive in several ways: they can support dynamic applications and precisely represent the available concurrency. However, they also require nuanced algorithms for scheduling and memory management for efficient execution. In this paper, we consider memory-efficient dynamic scheduling of task graphs. Specifically, we present a novel approach for dynamically recycling the memory locations assigned to data items as they are produced by tasks. We develop algorithms to identify memory-efficient store recycling functions by systematically evaluating the validity of a set of (user-provided or automatically generated) alternatives. Because recycling function can be input data-dependent, we have also developed support for continued correct execution of a task graph in the presence of a potentially incorrect store recycling function. Experimental evaluation demonstrates that our approach to automatic store recycling incurs little to no overheads, achieves memory usage comparable to the best manually derived solutions, often produces recycling functions valid across problem sizes and input parameters, and efficiently recovers from an incorrect choice of store recycling functions.

97 MATHEMATICS AND COMPUTING↗

DOE OSTI2017

What does fault tolerant Deep Learning need from MPI?

Deep Learning (DL) algorithms have become the {\em de facto} Machine Learning (ML) algorithm for large scale data analysis. DL algorithms are computationally expensive -- even distributed DL implementations which use MPI require days of training (model learning) time on commonly studied datasets. Long running DL applications become susceptible to faults -- requiring development of a fault tolerant system infrastructure, in addition to fault tolerant DL algorithms. This raises an important question: {\em What is needed from MPI for designing fault tolerant DL implementations?} In this paper, we address this problem for permanent faults. We motivate the need for a fault tolerant MPI specification by an in-depth consideration of recent innovations in DL algorithms and their properties, which drive the need for specific fault tolerance features. We present an in-depth discussion on the suitability of different parallelism types (model, data and hybrid); a need (or lack thereof) for check-pointing of any critical data structures; and most importantly, consideration for several fault tolerance proposals (user-level fault mitigation (ULFM), Reinit) in MPI and their applicability to fault tolerant DL implementations. We leverage a distributed memory implementation of Caffe, currently available under the Machine Learning Toolkit for Extreme Scale (MaTEx). We implement our approaches by extending MaTEx-Caffe for using ULFM-based implementation. Our evaluation using the ImageNet dataset and AlexNet neural network topology demonstrates the effectiveness of the proposed fault tolerant DL implementation using OpenMPI based ULFM.

Amatya, Vinay C.↗

DOE OSTI2015

Memory-Efficient Simulation of Frequency-Dependent Q

Memory-variable methods have been widely applied to approximate frequency-independent quality factor Q in numerical simulation of wave propagation. The frequency-independent model is often appropriate for frequencies up to about 1 Hz but at higher frequencies is inconsistent with some regional studies of seismic attenuation. We apply the memory-variable approach to frequency-dependent Q models that are constant below, and follow a power-law above, a chosen transition frequency. We present numerical results for the corresponding memory-variable relaxation times and weights, obtained by nonnegative least-squares fitting of the Q(f) function, for a range of exponent values; these times and weights can be scaled to an arbitrary transition frequency and a power-law prefactor, respectively. The resulting memory-variable formulation can be used with numerical wave-propagation solvers based on methods such as finite differences (FDs) or spectral elements and may be implemented in either conventional or coarse-grained form. In the coarse-grained approach, we fit effective Q for low-Q values (<200) using a nonlinear inversion technique and use an interpolation formula to find the corresponding weighting coefficients for arbitrary Q. A 3D staggered-grid FD implementation closely approximates the frequency–wavenumber solution to both a half-space and a layered model with a shallow dislocation source for Q as low as 20 over a bandwidth of two decades. We compare the effects of different power-law exponents using a finite-fault source model of the 2008 Mw 5.4 Chino Hills, California, earthquake and find that Q(f) models generally better fit the strong-motion data than the constant Q models for frequencies above 1 Hz.

Geochemistry & Geophysics↗

NASA NTRS1989

Application of an efficient hybrid scheme for aeroelastic analysis of advanced propellers

An efficient 3-D hybrid scheme is applied for solving Euler equations to analyze advanced propellers. The scheme treats the spanwise direction semi-explicitly and the other two directions implicitly, without affecting the accuracy, as compared to a fully implicit scheme. This leads to a reduction in computer time and memory requirement. The calculated power coefficients for two advanced propellers, SR3 and SR7L, and various advanced ratios showed good correlation with experiment. Spanwise distribution of elemental power coefficient and steady pressure coefficient differences also showed good agreement with experiment. A study of the effect of structural flexibility on the performance of the advanced propellers showed that structural deformation due to centrifugal and aero loading should be included for better correlation.

Srivastava, R.↗

NASA NTRS1990

Application of an efficient hybrid scheme for aeroelastic analysis of advanced propellers

Srivastava, R.↗

NASA NTRS1993

Postirradiation Effects In Integrated Circuits

Two reports discuss postirradiation effects in integrated circuits. Presents examples of postirradiation measurements of performances of integrated circuits of five different types: dual complementary metal oxide/semiconductor (CMOS) flip-flop; CMOS analog multiplier; two CMOS multiplying digital-to-analog converters; electrically erasable programmable read-only memory; and semiconductor/oxide/semiconductor octal buffer driver.

Shaw, David C.↗

NASA NTRS1994

Evidence that the protocell was also a protoneuron

A blueprint for a protocell was presented in 1960 (Fox) as a consequence of the newly discovered self-ordering of amino acids and the self-organization of the resultant thermal proteins into cellular structures. The biofunctions of the laboratory protocells (proteinoid microspheres) have since been cataloged; they display roots of many phenomena of modern cells, e.g. synthesis of internucleotide and peptide bonds in aqueous media. These results are inconsistent with a popular assumption that DNA/RNA preceded protein in earliest molecular evolution. The necessity for synthetic research on molecules and cells to 'begin at the beginning' is being realized. Ivanov and Fortsch (1986) have described by analysis how the self-ordering mechanism of amino acids into informed thermal proteins was conserved in evolution from the earliest stage as modern (reverse) mechanisms assumed control. Tyagi and Ponnamperuma (1990) have negated assumptions corollary to DNA/RNA. Ponnamperuma has demonstrated the powerful effect of self-ordering of amino acids in polymerization of aminoacyl nucleotides and the irrelevance of mononucleotide residues. Excitable thermal proteins (Vaughan et al, 1987) are neurotrophic and antiaging when added to cultures of real neurons (Hefti et al, 1991) and are memory enhancers in mice (Fox and Flood, 1992). Proteinoid microspheres of dominant hydrophobic constitution form 'gap junctions', sprout axon-like outgrowths, and form dendritic networks spontaneously. In the latest studies, phenylalanine-rich equimolar proteinoid or the leucine analog (Ishima et al 1981), is found to produce electrical signals for several days when lecithin is included in the assembly with the thermal polymer.

Bi, YU↗

NASA NTRS2003

RACE and Calculations of Three-dimensional Distributed Cavity Phase Shifts

The design for RACE, a Rb-clock flight experiment for the ISS, is described. The cold collision shift and multiple launching (juggling) have important implications for the design and the resulting clock accuracy and stability. We present and discuss the double clock design for RACE. This design reduces the noise contributions of the local oscillator and simplifies and enhances an accuracy evaluation of the clock. As we try to push beyond the current accuracies of clocks, new systematic errors become important. The best fountain clocks are using cylindrical TE(sub 011) microwave cavities. We recently pointed out that many atoms pass through a node of the standing wave microwave field in these cavities. Previous studies have shown potentially large frequency shifts for atoms passing through nodes in a TE(sub 013) cavity. The shift occurs because there is a small traveling wave component due to the absorption of the copper cavity walls. The small traveling wave component leads to position dependent phase shifts. To study these effects, we perform Finite Element calculations. Three-dimensional Finite Element calculations require significant computer resources. Here we show that the cylindrical boundary condition can be Fourier decomposed to a short series of two-dimensional problems. This dramatically reduces the time and memory required and we obtain (3D) phase distributions for a variety of cavities. With these results, we will be able to analyze this frequency shift in fountain and future space clocks.

Li, Ruoxin↗

NASA NTRS2015

High-Speed On-Board Data Processing for Science Instruments: HOPS

The project called High-Speed On-Board Data Processing for Science Instruments (HOPS) has been funded by NASA Earth Science Technology Office (ESTO) Advanced Information Systems Technology (AIST) program during April, 2012 â€" April, 2015. HOPS is an enabler for science missions with extremely high data processing rates. In this three-year effort of HOPS, Active Sensing of CO2 Emissions over Nights, Days, and Seasons (ASCENDS) and 3-D Winds were of interest in particular. As for ASCENDS, HOPS replaces time domain data processing with frequency domain processing while making the real-time on-board data processing possible. As for 3-D Winds, HOPS offers real-time high-resolution wind profiling with 4,096-point fast Fourier transform (FFT). HOPS is adaptable with quick turn-around time. Since HOPS offers reusable user-friendly computational elements, its FPGA IP Core can be modified for a shorter development period if the algorithm changes. The FPGA and memory bandwidth of HOPS is 20 GB/sec while the typical maximum processor-to-SDRAM bandwidth of the commercial radiation tolerant high-end processors is about 130-150 MB/sec. The inter-board communication bandwidth of HOPS is 4 GB/sec while the effective processor-to-cPCI bandwidth of commercial radiation tolerant high-end boards is about 50-75 MB/sec. Also, HOPS offers VHDL cores for the easy and efficient implementation of ASCENDS and 3-D Winds, and other similar algorithms. A general overview of the 3-year development of HOPS is the goal of this presentation.

Beyon, Jeffrey↗

NASA NTRS2024

Single-Event Effects Test Report Lattice Semiconductor, LCMXO3D-9400HC-5BG484I Field Programmable Gate Array

The purpose of this test was to characterize single event effects (SEE) in the LCMXO3D-9400HC-5BG484I, a low power and low density field programmable gate array (FPGA). The SEE concerns for the device that were investigated in this testing are single event upsets (SEUs) in the configuration static random-access memory (SRAM), SEUs in the FPGA fabric, single event latch up (SEL), and single event functional interrupts (SEFIs). Testing was conducted at Lawrence Berkeley National Laboratory (LBNL) on August 26th, 2024 and August 28th, 2024.

Adia M Wood↗

DOE OSTI2014

Blackcomb: Hardware-Software Co-design for Non-Volatile Memory in Exascale Systems

Summary of technical results of Blackcomb Memory Devices We explored various different memory technologies (STTRAM, PCRAM, FeRAM, and ReRAM). The progress can be classified into three categories, below. Modeling and Tool Releases Various modeling tools have been developed over the last decade to help in the design of SRAM or DRAM-based memory hierarchies. To explore new design opportunities that NVM technologies can bring to the designers, we have developed similar high-level models for NVM, including PCRAMsim [Dong 2009], NVSim [Dong 2012], and NVMain [Poremba 2012]. NVSim is a circuit-level model for NVM performance, energy, and area estimation, which supports various NVM technologies, including STT-RAM, PCRAM, ReRAM, and legacy NAND Flash. NVSim is successfully validated against industrial NVM prototypes, and it is expected to help boost architecture-level NVM-related studies. On the other side, NVMain is a cycle accurate main memory simulator designed to simulate emerging nonvolatile memories at the architectural level. We have released these models as open source tools and provided contiguous support to them. We also proposed PS3-RAM, which is a fast, portable and scalable statistical STT-RAM reliability analysis model [Wen 2012]. Design Space Exploration and Optimization With the support of these models, we explore different device/circuit optimization techniques. For example, in [Niu 2012a] we studied the power reduction technique for the application of ECC scheme in ReRAM designs and proposed to use ECC code to relax the BER (Bit Error Rate) requirement of a single memory to improve the write energy consumption and latency for both 1T1R and cross-point ReRAM designs. In [Xu 2011], we proposed a methodology to design STT-RAM for different optimization goals such as read performance, write performance and write energy by leveraging the trade-off between write current and write time of MTJ. We also studied the tradeoffs in building a reliable crosspoint ReRAM array [Niu 2012b]. We have conducted an in depth analysis of the circuit and system level design implications of multi-layer cross-point Resistive RAM (MLCReRAM) from performance, power and reliability perspectives [Xu 2013]. The objective of this study is to understand the design trade-offs of this technology with respect to the MLC Phase Change Memory (MLCPCM).Our MLC ReRAM design at the circuit and system levels indicates that different resistance allocation schemes, programming strategies, peripheral designs, and material selections profoundly affect the area, latency, power, and reliability of MLC ReRAM. Based on this analysis, we conduct two case studies: first we compare MLC ReRAM design against MLC phase-change memory (PCM) and multi-layer cross-point ReRAM design, and point out why multi-level ReRAM is appealing; second we further explore the design space for MLC ReRAM. Architecture and Application We explored hybrid checkpointing using phase-change memory for future exascale systems [Dong 2011] and showed that the use of nonvolatile memory for local checkpointing significantly increases the number of faults covered by local checkpoints and reduces the probability of a global failure in the middle of a global checkpoint to less than 1%. We also proposed a technique called i2WAP to mitigate the write variations in NVM-based last-level cache for the improvement of the NVM lifetime [Wang 2013]. Our wear leveling technique attempts to work around the limitations of write endurance by arranging data access so that write operations can be distributed evenly across all the storage cells. During our intensive research on fault-tolerant NVM design, we found that ECC cannot effectively tolerate hard errors from limited write endurance and process imperfection. Therefore, we devised a novel Point and Discard (PAD) architecture in in [ 2012] as a hard-error-tolerant architecture for ReRAM-based Last Level Caches. PAD improves the lifetime of ReRAM caches by 1.6X-440X under different process variations without performance overhead in the system's early life. We have investigated the applicability of NVM for persistent memory design [Zhao 2013]. New byte addressable NVM enables fast persistent memory that allows in-memory persistent data objects to be updated with much higher throughput. Despite the significant improvement, the performance of these designs is only 50% of the native system with no persistence support, due to the logging or copy-on-write mechanisms used to update the persistent memory. A challenge in this approach is therefore how to efficiently enable atomic, consistent, and durable updates to ensure data persistence that survives application and/or system failures. We have designed a persistent memory system, called Klin, that can provide performance as close as that of the native system. The Klin design adopts a non-volatile cache and a non-volatile main memory for constructing a multi-versioned durable memory system, enabling atomic updates without logging or copy-on-write. Our evaluation shows that the proposed Kiln mechanism can achieve up to 2X of performance improvement to NVRAM-based persistent memory employing write-ahead logging. In addition, our design has numerous practical advantages: a simple and intuitive abstract interface, microarchitecture-level optimizations, fast recovery from failures, and no redundant writes to slow non-volatile storage media. The work was published in MICRO 2013 and received Best Paper Honorable Mentioned Award.

97 MATHEMATICS AND COMPUTING↗

DOE OSTI2014

Memory functions of nanocrystalline cadmium selenide embedded ZrHfO high-k dielectric stack

Metal-oxide-semiconductor capacitors made of the nanocrystalline cadmium selenide nc-CdSe embedded Zr-doped HfO{sub 2} high-k stack on the p-type silicon wafer have been fabricated and studied for their charge trapping, detrapping, and retention characteristics. Both holes and electrons can be trapped to the nanocrystal-embedded dielectric stack depending on the polarity of the applied gate voltage. With the same magnitude of applied gate voltage, the sample can trap more holes than electrons. A small amount of holes are loosely trapped at the nc-CdSe/high-k interface and the remaining holes are strongly trapped to the bulk nanocrystalline CdSe site. Charges trapped to the nanocrystals caused the Coulomb blockade effect in the leakage current vs. voltage curve, which is not observed in the control sample. The addition of the nanocrystals to the dielectric film changed the defect density and the physical thickness, which are reflected on the leakage current and the breakdown voltage. More than half of the originally trapped holes can be retained in the embedded nanocrystals for more than 10 yr. The nanocrystalline CdSe embedded high-k stack is a useful gate dielectric for this nonvolatile memory device.

36 MATERIALS SCIENCE↗

NASA NTRSDate not supplied

Ab Initio Simulations of Martensitic Phase Transformations in NiTi-based High Temperature Ternary Shape Memory Alloys: NiTiHf and NiTiZr

Ab initio simulations of phase stability and martensitic phase transitions are performed for NiTi-based ternary shape memory alloys (SMAs). Specifically, we considered NiTiHf and NiTiZr, which are highly studied for high temperature SMA applications. Previously, we performed investigations of ordered NiTi and related binaries [1,2]. However, similar approaches for chemically disordered compounds present additional difficulties. In this work, special quasi-random structures (SQS) were generated for various compositions, x∈[0,0.5], of Ni0.5Ti(0.5-x)Hfx and Ni0.5Ti(0.5-x)Zrx to capture chemical disorder of off-stoichiometric compounds. Phase stability was evaluated through analysis of finite temperature phonon spectra using temperature dependent effective potential (TDEP) method. Free energies for the cubic B2 phase of NiTiHf and NiTiZr were computed using ab initio thermodynamic integration (AITI) developed previously [1,2]. Free energies for monoclinic B19’ and orthorhombic B33 phases were evaluated via quasi harmonic approximations (QHA). Our results show a critical composition (xc) where the three phases of B2, B19’ and B33 meet, i.e. there is a tri-critical point. For x xc, the transition is between B33 and B2, i.e. it is not a shape memory transition. The approach presented here opens the door to ab initio based predictions of MTT for arbitrary ternary SMAs.

Hessam Malmir↗

NASA NTRS1967

The effect of deep hypothermia on retention and motivation in the rat.

Effect of deep hypothermia on retention and motivation in rats during maze learning

RATS↗

NASA NTRS1982

Effect of 1.33 Mev gamma radiation and 0.5 Mev electrons on the mechanical properties of graphite fiber composites

Epoxy/graphite fiber, polyimide/graphite fiber, and polysulfone/graphite fiber composites were exposed to 1.33 Mev gamma irradiation and 0.5 Mev electron bombardment for varying periods of time. The effects of the irradiation treatments on the breaking stress and Young's modulus were studied by a three point bending test. Effects were small; both electron radiation up to 5000 Mrad and gamma radiation up to 350 Mrad resulted in slight increases in both stress and modulus.

Fornes, R. E.↗

DOE OSTI2016

Multi-step resistive switching behavior of Li-doped ZnO resistance random access memory device controlled by compliance current

The multi-step resistive switching (RS) behavior of a unipolar Pt/Li{sub 0.06}Zn{sub 0.94}O/Pt resistive random access memory (RRAM) device is investigated. It is found that the RRAM device exhibits normal, 2-, 3-, and 4-step RESET behaviors under different compliance currents. The transport mechanism within the device is investigated by means of current-voltage curves, in-situ transmission electron microscopy, and electrochemical impedance spectroscopy. It is shown that the ion transport mechanism is dominated by Ohmic behavior under low electric fields and the Poole-Frenkel emission effect (normal RS behavior) or Li{sup +} ion diffusion (2-, 3-, and 4-step RESET behaviors) under high electric fields.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2021

Dynamic Symmetry Breaking in Chiral Magnetic Systems

The Dzyaloshinskii–Moriya interaction (DMI) in magnetic systems stabilizes spin textures with preferred chirality, applicable to next-generation memory and computing architectures. In perpendicularly magnetized heavy-metal/ferromagnet films, the interfacial DMI originating from structural inversion asymmetry and strong spin-orbit coupling favors chiral Néel-type domain walls (DWs) whose energetics and mobility remain at issue. Thus, a new effect is characterized in which domains expand unidirectionally in response to a combination of out-of-plane and in-plane magnetic fields, with the growth direction controlled by the in-plane field strength. These growth directionalities and symmetries with applied fields cannot be understood from static treatments alone. The authors theoretically demonstrate that perpendicular field torques stabilize steady-state magnetization profiles highly asymmetric in elastic energy, resulting in a dynamic symmetry breaking consistent with the experimental findings. This phenomenon sheds light on the mechanisms governing the dynamics of Néel-type DWs and expands the utility of field-driven DW motion to probe and control chiral DWs.

36 MATERIALS SCIENCE↗

DOE OSTI2018

A computationally efficient ductile damage model accounting for nucleation and micro-inertia at high triaxialities

The computational formulation of a micro-mechanical material model for the dynamic failure of ductile metals is presented in this paper. The statistical nature of porosity initiation is accounted for by introducing an arbitrary probability density function which describes the pores nucleation pressures. Each micropore within the representative volume element is modeled as a thick spherical shell made of plastically incompressible material. The treatment of porosity by a distribution of thick-walled spheres also allows for the inclusion of micro-inertia effects under conditions of shock and dynamic loading. The second order ordinary differential equation governing the microscopic porosity evolution is solved with a robust implicit procedure. A new Chebyshev collocation method is employed to approximate the porosity distribution and remapping is used to optimize memory usage. The adaptive approximation of the porosity distribution leads to a reduction of computational time and memory usage of up to two orders of magnitude. Moreover, the proposed model affords consistent performance: changing the nucleation pressure probability density function and/or the applied strain rate does not reduce accuracy or computational efficiency of the material model. The numerical performance of the model and algorithms presented is tested against three problems for high density tantalum: single void, one-dimensional uniaxial strain, and two-dimensional plate impact. Here, the results using the integration and algorithmic advances suggest a significant improvement in computational efficiency and accuracy over previous treatments for dynamic loading conditions.

42 ENGINEERING↗

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