Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “power switching”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 181 records · Page 10

Comparative study of INPIStron and spark gap

An inverse pinch plasma switch, INPIStron, was studied in comparison to a conventional spark gap. The INPIStron is under development for high power switching applications. The INPIStron has an inverse pinch dynamics, opposed to Z-pinch dynamics in the spark gap. The electrical, plasma dynamics and radiative properties of the closing plasmas have been studied. Recently the high-voltage pulse transfer capabilities or both the INPIStron and the spark gap were also compared. The INPIStron with a low impedance Z = 9 ohms transfers 87 percent of an input pulse with a halfwidth of 2 mu s. For the same input pulse the spark gap of Z = 100 ohms transfers 68 percent. Fast framing and streak photography, taken with an TRW image converter camera, was used to observe the discharge uniformity and closing plasma speed in both switches. In order to assess the effects of closing plasmas on erosion of electrode material, emission spectra of two switches were studied with a spectrometer-optical multi channel analyzer (OMA) system. The typical emission spectra of the closing plasmas in the INPIStron and the spark gap showed that there were comparatively weak carbon line emission in 658.7 nm and copper (electrode material) line emissions in the INPIStron, indicating low erosion of materials in the INPIStron.

Han, Kwang S.↗

Static and Turn-on Switching Characteristics of 4H-Silicon Carbide SITs to 200 deg C

Test results are presented for normally-off 4H-SiC Static Induction Transistors (SITs) intended for power switching and are among the first normally-off such devices realized in SiC. At zero gate bias, the gate p-n junction depletion layers extend far enough into the conduction channel to cut off the channel. Application of forward gate bias narrows the depletion regions, opening up the channel to conduction by majority carriers. In the present devices, narrow vertical channels get pinched by depletion regions from opposite sides. Since the material is SiC, the devices are usable at temperatures above 150 C. Static curve and pulse mode switching observations were done at selected temperatures up to 200 C on a device with average static characteristics from a batch of similar devices. Gate and drain currents were limited to about 400 mA and 3.5 A, respectively. The drain voltage was limited to roughly 300 V, which is conservative for this 600 V rated device. At 23 C, 1 kW, or even more, could be pulse mode switched in 65 ns (10 to 90 percent) into a 100 load. But at 200 C, the switching capability is greatly reduced in large part by the excessive gate current required. Severe collapse of the saturated drain-to-source current was observed at 200 C. The relation of this property to channel mobility is reviewed.

Niedra, Janis M.↗

Low-Temperature Spacecraft: Challenges/Opportunities

Imagine sending a spacecraft into deep space that operates at the ambient temperature of its environment rather than hundreds of degrees Kelvin warmer. The average temperature of a spacecraft warmed only by the sun drops from 279 K near the Earth's orbit to 90 K near the orbit of Saturn, and to 44 K near Pluto's orbit. At present, deep space probes struggle to maintain an operating temperature near 300 K for the onboard electronics. To warm the electronics without consuming vast amounts of electrical energy, radioisotope heater units (RHUs) are used in vast numbers. Unfortunately, since RHU are always 'on', an active thermal management system is required to reject the excess heat. A spacecraft designed to operate at cryogenic temperatures and shielded from the sun by a large communication dish or solar cell array could be less complex, lighter, and cheaper than current deep space probes. Before a complete low-temperature spacecraft becomes a reality, there are several challenges to be met. Reliable cryogenic power electronics is one of the major challenges. The Low-Temperature Power Electronics Research Group at NASA Glenn Research Center (GRC) has demonstrated the ability of some commercial off the shelf power electronic components to operate at temperatures approaching that of liquid nitrogen (77 K). Below 77 K, there exists an opportunity for the development of reliable semiconductor power switching technologies other than bulk silicon CMOS. This paper will report on the results of NASA GRC's Low-Temperature Power Electronics Program and discuss the challenges to (opportunities for) the creation of a low-temperature spacecraft.

Dickman, J. E.↗

Evaluation of a high power inverter for potential space applications

The ADM-006 inverter discussed utilizes a unique method of using power switching circuits to produce three-phase low harmonic content voltages without any significant filtering. This method is referred to as the power center approach to inverter design and is explained briefly. The results are presented of tests performed by MSFC to evaluate inverter performance, especially when required to provide power to nonlinear loads such as half or full wave rectified loads with capacitive filtering. Test preocedures and results are described. These tests show that the power center inverter essentially met or exceeded all of claims excluding voltage regulation (3.9 percent versus specified 3.3 percent) and would be a good candidate for high power inverter applications such as may be found on Space Station, Spacelab, etc.

Guynes, B. V.↗

Multiple-Ring Digital Communication Network

Optical-fiber digital communication network to support data-acquisition and control functions of electric-power-distribution networks. Optical-fiber links of communication network follow power-distribution routes. Since fiber crosses open power switches, communication network includes multiple interconnected loops with occasional spurs. At each intersection node is needed. Nodes of communication network include power-distribution substations and power-controlling units. In addition to serving data acquisition and control functions, each node acts as repeater, passing on messages to next node(s). Multiple-ring communication network operates on new AbNET protocol and features fiber-optic communication.

Kirkham, Harold↗

7.86 kV GaN-on-GaN PN power diode with BaTiO3 for electrical field management

Devices based on gallium nitride (GaN) have great potential for high power switching applications due to the high breakdown field and high electron mobility. In this work, we present a vertical GaN-on-GaN PN power diode using high dielectric constant material, BaTiO3, for electrical field management and high breakdown voltages, in together with an optimized guard-ring and field plate design. Numerical simulation shows that with high-k dielectrics implemented, the peak electrical field at the PN interface is mitigated from 3.5 to 3.1 MV/cm under a reverse bias of −9.05 kV. The device design with BaTiO3 shows a breakdown voltage of 9.65 kV or about 600 V improvement. The fabricated diodes with a 57 μm thick drift layer demonstrate a breakdown voltage of 7.86 kV on a bulk GaN substrate. The device has an on-resistance of 2.8 mΩ cm2 and a Baliga figure of merit of 22 GW/cm2.

Physics↗

Low-to-Medium Power Single Chip Digital Controlled DC-DC Regulator for Point-of-Load Applications

A DC-DC converter for generating a DC output voltage includes: a digitally controlled pulse width modulator (DPWM) for controlling a switching power stage to supply a varying voltage to an inductor; and a digital voltage feedback circuit for controlling the DPWM in accordance with a feedback voltage corresponding to the DC output voltage, the digital voltage feedback circuit including: a first voltage controlled oscillator for converting the feedback voltage into a first frequency signal and to supply the first frequency signal to a first frequency discriminator; a second voltage controlled oscillator for converting a reference voltage into a second frequency signal and to supply the second frequency signal to a second frequency discriminator; a digital comparator for comparing digital outputs of the first and second frequency discriminators and for outputting a digital feedback signal; and a controller for controlling the DPWM in accordance with the digital feedback signal.

Adell, Philippe C.↗

Elimination of current spikes in buck power converters

Current spikes in a buck power converter due to commutating diode turn-off time are eliminated by using a tapped inductor in the converter with the tap connected to the switching transistor. The commutating diode is not in the usual place, but is instead connected to conduct current from one end of the tapped inductor remote from the load during the interval in which the transistor is not conducting. In the case of a converter having a center-tapped (primary and secondary) transformer between two switching power transistors operated in a push-pull mode and two rectifying diodes in the secondary circuit, current spikes due to transformer saturation are also eliminated by using a tapped inductor in the converter with the tap connected to the rectifying diodes and a diode connected to conduct current from one end of the tapped inductor remote from the load during the interval in which the transistors are not conducting.

Mclyman, W. T.↗

Advanced development of double-injection, deep-impurity semiconductor switches

Deep-impurity, double-injection devices, commonly refered to as (DI) squared devices, represent a class of semiconductor switches possessing a very high degree of tolerance to electron and neutron irradiation and to elevated temperature operation. These properties have caused them to be considered as attractive candidates for space power applications. The design, fabrication, and testing of several varieties of (DI) squared devices intended for power switching are described. All of these designs were based upon gold-doped silicon material. Test results, along with results of computer simulations of device operation, other calculations based upon the assumed mode of operation of (DI) squared devices, and empirical information regarding power semiconductor device operation and limitations, have led to the conculsion that these devices are not well suited to high-power applications. When operated in power circuitry configurations, they exhibit high-power losses in both the off-state and on-state modes. These losses are caused by phenomena inherent to the physics and material of the devices and cannot be much reduced by device design optimizations. The (DI) squared technology may, however, find application in low-power functions such as sensing, logic, and memory, when tolerance to radiation and temperature are desirable (especially is device performance is improved by incorporation of deep-level impurities other than gold.

Hanes, M. H.↗

A hybrid electromechanical solid state switch for ac power control

Bidirectional thyristor coupled to a series of actuator driven electromechanical contacts generates hybrid electromechanical solid state switch for ac power control. Device is useful in power control applications where zero crossover switching is required.

Source record↗

A new very high voltage semiconductor switch

A new family of semiconductor switches using double injection techniques and compensated deep impurities is described. They have the potential to raise switching voltages a factor of 10 higher (up to 100 kV) than p-n junction devices while exhibiting extremely low (or zero) forward voltage. Several potential power switching applications are indicated.

Sundberg, G. R.↗

A new very high voltage semiconductor switch

A new family of semiconductor switches using double injection techniques and compensated deep impurities is described. They have the potential to raise switching voltages a factor of 10 higher (up to 100 kV) than p-n junction devices while exhibiting extremely low (or zero) forward voltage. Several potential power switching applications are indicated.

Sundberg, G. R.↗

Wide Bandgap Solid State Circuit Breakers for AC and DC Microgrids

The objective of the project is to develop a new class of ultrafast, self-powered, programmable, autonomously operated, bidirectional solid state circuit breakers (SSCBs) using wide band gap (WBG) semiconductors with 1000X reduction in response time and 5X reduction in cost in comparison to commercial mechanical circuit breakers. In particular, we have developed two SSCB prototypes of 380VDC/220VAC/20A and 1000VDC/10A using GaN power switches for common distribution-level AC and DC voltages.

24 POWER TRANSMISSION AND DISTRIBUTION↗

Diaphragm Pump With Resonant Piezoelectric Drive

A diaphragm pump driven by a piezoelectric actuator is undergoing development. This pump is intended to be a prototype of lightweight, highly reliable pumps for circulating cooling liquids in protective garments and high-power electronic circuits, and perhaps for some medical applications. The pump would be highly reliable because it would contain no sliding seals or bearings that could wear, the only parts subject to wear would be two check valves, and the diaphragm and other flexing parts could be designed, by use of proven methods, for extremely long life. Because the pump would be capable of a large volumetric flow rate and would have only a small dead volume, its operation would not be disrupted by ingestion of gas, and it could be started reliably under all conditions. The prior art includes a number piezoelectrically actuated diaphragm pumps. Because of the smallness of the motions of piezoelectric actuators (typical maximum strains only about 0.001), the volumetric flow rates of those pumps are much too small for typical cooling applications. In the pump now undergoing development, mechanical resonance would be utilized to amplify the motion generated by the piezoelectric actuator and thereby multiply the volumetric flow rate. The prime mover in this pump would be a stack of piezoelectric ceramic actuators, one end of which would be connected to a spring that would be part of a spring-and-mass resonator structure. The mass part of the resonator structure would include the pump diaphragm (see Figure 1). Contraction of the spring would draw the diaphragm to the left, causing the volume of the fluid chamber to increase and thereby causing fluid to flow into the chamber. Subsequent expansion of the spring would push the diaphragm to the right, causing the volume of the fluid chamber to decrease, and thereby expelling fluid from the chamber. The fluid would enter and leave the chamber through check valves. The piezoelectric stack would be driven electrically to make it oscillate at the resonance frequency of the spring and- mass structure. This frequency could be made high enough (of the order of 400 Hz) that the masses of all components could be made conveniently small. The resonance would amplify the relatively small motion of the piezoelectric stack (a stroke of the order of 10 m) to a diaphragm stroke of the order of 0.5 mm. The exact amplification factor would depend on the rate of damping of oscillations; this, in turn, would depend on details of design and operation, including (but not limited to) the desired pressure rise and volumetric flow rate. In order to obtain resonance with large displacement, the damping rate must be low enough that the energy imparted to the pumped fluid on each stroke is much less than the kinetic and potential energy exchanged between the mass and spring during each cycle of oscillation. To minimize the power demand of the pump, a highly efficient drive circuit would be used to excite the piezoelectric stack. This circuit (see Figure 2) would amount to a special-purpose regenerative, switching power supply that would operate in a power-source mode during the part of an oscillation cycle when the excitation waveform was positive and in a power-recovery mode during the part of the cycle when the excitation waveform was negative. The circuit would include a voltage-boosting dc-to-dc converter that would convert between a supply potential of 24 Vdc and the high voltage needed to drive the piezoelectric stack. Because of the power-recovery feature, the circuit would consume little power. It should be possible to build the circuit as a compact unit, using readily available components.

Izenson, Michael G.↗

1.2 kV, 10 A, 4H-SiC Bi-Directional Field Effect Transistor (BiDFET) with Low On-State Voltage Drop

Bidirectional power switches are used in matrix-or cyclo-converters and in multistage inverter circuits to facilitate high-frequency AC-to-AC conversion. A new 1.2 kV bidirectional MOSFET (BiDFET) with low on-resistance is achieved and demonstrated using two discrete SiC power MOSFET bare die chips, packaged within a four-terminal custom-designed module. Static and dynamic characterization has been carried out to inspect the on-state and switching behaviour of the BiDFET. Here, the BiDFET is shown to have a low forward voltage drop of 0.6 V at a current of 10 A, which is more than 2.5x smaller than previous Si IGBT and SiC MOSFET based bidirectional switch implementations.

36 MATERIALS SCIENCE↗

Autonomous power expert system

The goal of the Autonomous Power System (APS) program is to develop and apply intelligent problem solving and control technologies to the Space Station Freedom Electrical Power Systems (SSF/EPS). The objectives of the program are to establish artificial intelligence/expert system technology paths, to create knowledge based tools with advanced human-operator interfaces, and to integrate and interface knowledge-based and conventional control schemes. This program is being developed at the NASA-Lewis. The APS Brassboard represents a subset of a 20 KHz Space Station Power Management And Distribution (PMAD) testbed. A distributed control scheme is used to manage multiple levels of computers and switchgear. The brassboard is comprised of a set of intelligent switchgear used to effectively switch power from the sources to the loads. The Autonomous Power Expert System (APEX) portion of the APS program integrates a knowledge based fault diagnostic system, a power resource scheduler, and an interface to the APS Brassboard. The system includes knowledge bases for system diagnostics, fault detection and isolation, and recommended actions. The scheduler autonomously assigns start times to the attached loads based on temporal and power constraints. The scheduler is able to work in a near real time environment for both scheduling and dynamic replanning.

Ringer, Mark J.↗

Autonomous power expert system

The goal of the Autonomous Power System (APS) program is to develop and apply intelligent problem solving and control technologies to the Space Station Freedom Electrical Power Systems (SSF/EPS). The objectives of the program are to establish artificial intelligence/expert system technology paths, to create knowledge based tools with advanced human-operator interfaces, and to integrate and interface knowledge-based and conventional control schemes. This program is being developed at the NASA-Lewis. The APS Brassboard represents a subset of a 20 KHz Space Station Power Management And Distribution (PMAD) testbed. A distributed control scheme is used to manage multiple levels of computers and switchgear. The brassboard is comprised of a set of intelligent switchgear used to effectively switch power from the sources to the loads. The Autonomous Power Expert System (APEX) portion of the APS program integrates a knowledge based fault diagnostic system, a power resource scheduler, and an interface to the APS Brassboard. The system includes knowledge bases for system diagnostics, fault detection and isolation, and recommended actions. The scheduler autonomously assigns start times to the attached loads based on temporal and power constraints. The scheduler is able to work in a near real time environment for both scheduling an dynamic replanning.

Ringer, Mark J.↗