High-resolution microstrip NMR detectors for subnanoliter samples
We present the numerical optimization and experimental characterization of two microstrip-based nuclear magnetic resonance (NMR) detectors.
SEARCH · Engineering Papers
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.
We present the numerical optimization and experimental characterization of two microstrip-based nuclear magnetic resonance (NMR) detectors.
A novel design of an array of half-wave superconductive microstrip resonators is described. The resonator is intended to be useful for electron spin resonance studies of thin film samples at cryogenic temperatures. It achieves a high quality factor, has a small mode-volume, and creates a uniform magnetic field in a plane above the resonator. The device is made of thin film Niobium on sapphire wafer and is tested with a static magnetic field. Variation of Q-factor versus the magnetic field's strength at different temperatures is reported and is in a good agreement with simulation when the loss due to the vortices is included. Also, the power-dependence response of the resonator is shown in experiments and is verified by capturing the nonlinearity associated with the surface impedance of the superconducting film into the circuit model of the device.
We develop time-domain simulations of microwave and THz radiation sources built as arrays of active devices when the radiation wavelength is small as compared to spacing between electronic components. We pursue an approach when the system is represented by equations with time-delay feedback that could generate chaos and other forms of complicated dynamics. The approach simplifies simulations of ultra-wideband effects and exceeds capabilities of frequency-domain methods. As a model case, we simulated a microstrip circuit with Gunn diode and a remote resonator emitting the radiation towards infinity. We observed the emergence of either the continuous waves or the trains of high-frequency pulses depending on the bias conditions. We found bistability and hysteresis in the onset of different oscillation modes that depends on the way of driving the bias voltage into the domain of instability of the given system. The results would allow one to improve the design of THz radiation sources with time-delay coupling between components.
In this paper a dual band planar antenna has been proposed for IEEE 802.16 Wi-MAX /IEEE 802.11 WLAN/4.9 GHz public safety applications. The antenna comprises a frequency bandwidth of 560MHz (3.37GHz-3.93GHz) for WLAN and WiMAX and 372MHz (4.82GHz-5.192GHz) for 4.9 GHz public safety applications and Radio astronomy services (4.8-4.94 GHz). The proposed antenna constitutes of a single microstrip patch reactively loaded with three identical steps positioned in a zig-zag manner towards the radiating edges of the patch. The coaxially fed patch antenna characteristics (radiation pattern, antenna gain, antenna directivity, current distribution, S{sub 11}) have been investigated. The antenna design is primarily focused on achieving a dual band operation.
The bandwidth enhancement of a stacked non-uniform electromagnetically coupled H-shaped Microstrip Antenna (SNHMA) with tapered edges is analyzed and simulated using the IE3D simulator. The proposed antenna prototype is drafted on FR-4 material and stacked further with an air discontinuity of 0.3 mm to the next layer. The various parameters optimized to achieve the best performance from the modified SNHMA primarily include a)length b)width of the patch c)air gap thickness. The redesigned antenna serves at two distinct frequencies with an elevated bandwidth of 30.85 % at the central frequency 5.762 GHz, approximately four times the bandwidth of the standard patch having the same dimensions. The simulated radiation patterns (E-plane and H-plane) are exhibited within the range of frequencies where the broadband response is observed. The specifications of the proposed structure make it promising for the higher band of Wi-MAX applications.
Spin waves are promising candidates for information processing and transmission in a broad frequency range. In the realization of magnonic devices, the frequency related division of the spin waves is a critical function for parallel information processing. In this work, we demonstrate a proof-of-concept spin-wave frequency division multiplexing method by magnetizing a homogeneous magnetic microstripe with an inhomogeneous field. The symmetry breaking additional field is introduced by a Permalloy stripe simply placed in lateral proximity to an yttrium iron garnet waveguide. Spin waves with different frequencies can propagate independently, simultaneously, and separately in space along the shared waveguide. This work demonstrates one potential way for parallel information transmission and processing in magnonics.
The propagation of edge localized spin waves (E-SWs) in yttrium iron garnet (YIG; Y3Fe5O12) microstripes with and without magnetic microstructures in close proximity is investigated by micromagnetic simulations. A splitting of the dispersion curve with the presence of permalloy (Py; Ni81Fe19) stripe is observed. The results show that E-SWs on the two edges of YIG stripe have different wavelengths, group velocities, and decay lengths at the same frequencies. The role of the Py stripe was found to be the source of the inhomogeneous static dipolar field without dynamic coupling with YIG. This work opens new perspectives for the design of innovative spin wave interference-based logic devices.
This work presents Turpial, a custom-designed low- power front-end readout ASIC for microstrip silicon sensors. Implemented in 130 nm CMOS technology, the chip integrates 64 identical readout channels, each including a configurable charge-sensitive amplifier, a bipolar pulse shaper, a 32-sample 50 Msps analog memory, and a 12-bit RC-hybrid SAR ADC operating at 1 Msps. To satisfy the target power budget of 5 mW per channel, the architecture employs a time-decoupled readout scheme in which fast transient signals are first captured in the analog memory and subsequently digitized at a lower rate. Turpial supports a wide dynamic range from 1 kℎ+ to 1 Mℎ+ while maintaining low noise performance, targeting an equivalent noise charge (ENC) below 200 𝑒−including the sensor, and providing a maximum gain of 1500 mV/fC. A digital block manages slow control, data acquisition, and data serialization through dual CML 300 Mb/s serializers. In addition, an on-chip reference circuit, based on a sub-1 V bandgap reference and an integrated LDO regulator, eliminates the need for external reference circuitry. Experimental results demonstrate that both the individual building blocks and the fully integrated ASIC meet the design specifications.
Monolithic color synthesis is demonstrated using InGaN/GaN multiple quantum wells (QWs) grown on GaN microstripes formed by selective area epitaxy on SiO{sub 2} mask patterns. The striped microfacet structure is composed of (0001) and (11-22) planes, attributed to favorable surface polarity and surface energy. InGaN/GaN QWs on different microfacets contain spatially inhomogeneous compositions owing to the diffusion of adatoms among the facets. This unique property allows the microfacet QWs to emit blue light from the (11-22) plane and yellow light from the top (0001) plane, the mixing of which leads to the perception of white light emission.
We present a solution of the electrodynamic problem for a microstrip radiating structure with a substrate of a chiral metamaterial using the singular integral representation of the field, which in turn is reduced to a singular integral equation with the Cauchy-type singularity relative to the longitudinal component of the surface current density. Graphs of the current distribution for different types of substrates and the chirality parameters of a substrate are given.
In this paper, we present simultaneous strain and temperature sensing using a single microstrip patch antenna fabricated on commercial printed circuit board (PCB). Temperature and strain are extracted from the resonant frequencies of the patch antenna as these frequencies are dependent on the dielectric constant of the PCB and the patch dimensions, which are subject to change with applied strain and temperature variations. The principle of operation of the patch antenna is first discussed, followed by the design and fabrication of the instrumented test specimen. Finally, thermal and mechanical tests were conducted to validate the strain and temperature sensing performance of the antenna sensor
Development of computer programs for component analysis and design aids used in production of microstrip components is discussed. System includes designs for couplers, filters, circulators, transformers, power splitters, diode switches, and attenuators.
A microstrip-type single-pole double-throw (SPDT) switch whose RF and bias portions contain only a metallized alumina substrate and two PIN diodes has been developed. A technique developed to eliminate the dc blocking capacitors needed for biasing the diodes is described. These capacitors are extra components and could lower the reliability significantly. An SPDT switch fabricated on a 5.08 x 5.08 x 0.127-cm (2 x 2 x 0.050-in.) substrate has demonstrated an RF power-handling capability greater than 50 W at S-band. The insertion loss is less than 0.25 db and the input-to-off port isolation is greater than 36 db over a bandwidth larger than 30 MHz. The input voltage standing-wave ratio is lower than 1.07 over the same bandwidth. Theoretical development of the switch characteristics and experimental results, which are in good agreement with theory, are presented.
A number of computer programs are presented for use in the synthesis of microwave components in microstrip geometries. The programs compute the electrical and dimensional parameters required to synthesize couplers, filters, circulators, transformers, power splitters, diode switches, multipliers, diode attenuators and phase shifters. Additional programs are included to analyze and optimize cascaded transmission lines and lumped element networks, to analyze and synthesize Chebyshev and Butterworth filter prototypes, and to compute mixer intermodulation products. The programs are written in FORTRAN and the emphasis of the study is placed on the use of these programs and not on the theoretical aspects of the structures.
Description of a microstrip-type single-pole double-throw switch, which uses only two PIN diodes, eliminates usual dc blocking capacitors, and has demonstrated an RF power handling capacity greater than 100 W CW at S-band. The insertion loss is less than 0.25 dB, and the input-to-off port isolation is greater than 36 dB over a bandwidth larger than 30 MHz.
Switch, which uses only two p-i-n diodes on microstrip substrate, has been developed for application in spacecraft radio systems. Switch features improved power drain, weight, volume, magnetic cleanliness, and reliability, over currently-used circulator and electromechanical switches.
A systematic analysis of mutual coupling compensation using microstrip techniques is presented. A method for behind-the-array coupling of a phased antenna array is investigated as to its feasibility. The matching scheme is tried on a rectangular array of one half lambda 2 dipoles, but it is not limited to this array element or geometry. In the example cited the values of discrete components necessary were so small an L-C network is needed for realization. Such L-C tanks might limit an otherwise broadband array match, however, this is not significant for this dipole array. Other areas investigated were balun feeding and power limits of spiral antenna elements.
A technique is presented for calculating dielectric loss in microstrip lines. Numerical results for several different substrates are included. These are compared with other available results and experimental data.