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At least 181 records · Page 10

Explosive device comprising an explosive material having controlled explosive properties

An explosive device is described herein, wherein the explosive device includes a substrate that has a surface, wherein surface energy of a portion of the surface of the substrate has been modified in a vacuum chamber from a first surface energy to a second surface energy. The explosive device additionally includes explosive material that has been deposited on the surface of the substrate in the vacuum chamber by way of physical vapor deposition (PVD), wherein the explosive material is deposited on the portion of the surface of the substrate subsequent to the surface energy of the portion of the surface of the substrate being modified from the first surface energy to the second surface energy.

Forrest, Eric Christopher↗

Explosive device comprising an explosive material having controlled explosive properties

An explosive device is described herein, wherein the explosive device includes a substrate that has a surface, wherein surface energy of a portion of the surface of the substrate has been modified in a vacuum chamber from a first surface energy to a second surface energy. The explosive device additionally includes explosive material that has been deposited on the surface of the substrate in the vacuum chamber by way of physical vapor deposition (PVD), wherein the explosive material is deposited on the portion of the surface of the substrate subsequent to the surface energy of the portion of the surface of the substrate being modified from the first surface energy to the second surface energy.

Forrest, Eric Christopher↗

Crosslinked polymer binders for electrochemical energy storage devices

An electrochemical storage device including a conductive material and an electrochemical storage device material held together by a covalently crosslinked binder matrix. A method of forming an electrode for an electrochemical storage device, the method including the steps of: mixing electrochemical storage device material, conductive material, linear polymer, and crosslinker with one or more solvents, the resultant mixture forming an electrode slurry, crosslinking the linear polymer with the crosslinker to thereby create a covalently crosslinked polymer network of the polymer and crosslinker, the crosslinked polymer network physically or chemically binding together the electrochemical storage device material and the conductive material.

Zhu, Yu↗

Progress and Application of Halide Perovskite Materials for Solar Cells and Light Emitting Devices

Halide perovskite materials have attracted worldwide attention in the photovoltaic area due to the rapid improvement in efficiency, from less than 4% in 2009 to 26.1% in 2023 with only a nanometer lever photo-active layer. Meanwhile, this nova star found applications in many other areas, such as light emitting, sensor, etc. This review started with the fundamentals of physics and chemistry behind the excellent performance of halide perovskite materials for photovoltaic/light emitting and the methods for preparing them. Then, it described the basic principles for solar cells and light emitting devices. It summarized the strategies including nanotechnology to improve the performance and the application of halide perovskite materials in these two areas: from structure–property relation to how each component in the devices affects the overall performance. Moreover, this review listed the challenges for the future applications of halide perovskite materials.

36 MATERIALS SCIENCE↗

Material properties and device evaluations of ECR-deposited a-Si:H and a-SiC:H films

Device-quality a-Si:H and a-SiC:H films have been deposited using electron cyclotron resonance (ECR) microwave plasmas of SiH4, CH4, and H2 mixtures. Typical material properties of ECR-deposited, photosensitive a-Si:H films are: (1) high photosensitivity up to 2 x 106 with a photoconductivity of 10 exp -5 to 10 exp -4/(Ohm-cm), (2) a Tauc gap of 1.75 to 1.85 eV, (3) an Urbach slope of 50-60 meV determined by the constant photocurrent method, and (4) an integrated defect density of 1-2 x 10 exp 16/cu cm determined by junction capacitance measurements. Highly conductive, p-type a-SiC:H films have been produced by ECR plasmas with a conductivity of 0.2/(Ohm-cm).

Shing, Y. H.↗

Devices and systems for material transportation

Various embodiments relate to devices for transporting high-assay low-enriched uranium (HALEU). A device may include at least one section, wherein each section of the at least one section includes a number of storage tubes. Each storage tube, which is configured to receive and hold a container, extends from adjacent a first end of the section toward a second, opposite end of the section. Each section further includes a number of flux traps, wherein each storage tube of the number of storage tubes is at least partially surrounded by a flux trap of the number of flux traps Associated systems are also disclosed.

Eidelpes, Elmar F.↗

Cooling device featuring thermoelectric and diamond materials for temperature control of heat-dissipating devices

A cooling device for lowering the temperature of a heat-dissipating device. The cooling device includes a heat-conducting substrate (composed, e.g., of diamond or another high thermal conductivity material) disposed in thermal contact with the heat-dissipating device. During operation, heat flows from the heat-dissipating device into the heat-conducting substrate, where it is spread out over a relatively large area. A thermoelectric cooling material (e.g., a Bi.sub.2 Te.sub.3 -based film or other thermoelectric material) is placed in thermal contact with the heat-conducting substrate. Application of electrical power to the thermoelectric material drives the thermoelectric material to pump heat into a second heat-conducting substrate which, in turn, is attached to a heat sink.

Vandersande, Ian W.↗

Corrosion proxy material integrated sensor devices for distributed sensing of early corrosion onset and corrosion quantification

Embodiments relate to methods, systems and apparatus for detecting corrosion using a detector apparatus with a host component. The method includes a detector apparatus. The detector apparatus includes an energy source; a corrosion proxy thin film that corrodes at a rate where the normalized change of mass of the film over time is greater than the normalized change of mass of the bulk material of the host component in a harsh environment; and the detector, wherein the detector is capable of detecting a change in energy due to corrosion of the corrosion proxy thin film. The method includes exposing the host component and the corrosion proxy thin film to the harsh environment; and detecting a change in energy using the detector due to corrosion of the corrosion proxy thin film.

Ohodnicki, Jr., Paul R.↗

Novel Materials, Processing and Device Technologies for Space Exploration with Potential Dual-Use Applications

We highlight results of a broad spectrum of efforts on lower-temperature processing of nanomaterials, novel approaches to energy conversion, and environmentally rugged devices. Solution-processed quantum dots of copper indium chalcogenide semiconductors and multiwalled carbon nanotubes from lower-temperature spray pyrolysis are enabled by novel (precursor) chemistry. Metal-doped zinc oxide (ZnO) nanostructured components of photovoltaic cells have been grown in solution at low temperature on a conductive indium tin oxide substrate. Arrays of ZnO nanorods can be templated and decorated with various semiconductor and metallic nanoparticles. Utilizing ZnO in a more broadly defined energy conversion sense as photocatalysts, unwanted organic waste materials can potentially be repurposed. Current efforts on charge carrier dynamics in nanoscale electrode architectures used in photoelectrochemical cells for generating solar electricity and fuels are described. The objective is to develop oxide nanowire-based electrode architectures that exhibit improved charge separation, charge collection and allow for efficient light absorption. Investigation of the charge carrier transport and recombination properties of the electrodes will aid in the understanding of how nanowire architectures improve performance of electrodes for dye-sensitized solar cells. Nanomaterials can be incorporated in a number of advanced higher-performance (i.e. mass specific power) photovoltaic arrays. Advanced technologies for the deposition of 4H-silicon carbide are described. The use of novel precursors, advanced processing, and process studies, including modeling are discussed from the perspective of enhancing the performance of this promising material for enabling technologies such as solar electric propulsion. Potential impact(s) of these technologies for a variety of aerospace applications are highlighted throughout. Finally, examples are given of technologies with potential spin-offs for dual-use or terrestrial applications.

solid state devices↗

Digital Light Processing (DLP): 3D printing of polymer-based graphene oxide nanocomposites—Efficient antimicrobial material for biomedical devices

Bacterial infections are one of the major causes of surgical implant inefficiency and failure. Herein, we present a Nanocomposite (NC) produced by the addition of Poly(N-vinyl carbazole)-Graphene Oxide dispersion (PVK-GO) as a nanofiller to a commercial photopolymer acrylate resin and 3D printed as coatings via the Digital Light Processing technique. Characterization and bioassay results against Escherichia coli and Staphylococcus aureus confirmed the elevated thermomechanical properties and efficient antibacterial activity of the printed NC-based coatings. In conclusion, the present study demonstrates the fabrication and optimization of a PVK-GO-based NC and its potential utilization as a 3D-printable material for biomedical applications.

2D materials↗

Methods of measurement for semiconductor materials, process control, and devices

The development of methods of measurement for semiconductor materials, process control, and devices is discussed. The following subjects are also presented: (1) demonstration of the high sensitivity of the infrared response technique by the identification of gold in a germanium diode, (2) verification that transient thermal response is significantly more sensitive to the presence of voids in die attachment than steady-state thermal resistance, and (3) development of equipment for determining susceptibility of transistors to hot spot formation by the current-gain technique.

Bullis, W. M.↗

Methods of Measurement for Semiconductor Materials, Process Control, and Devices

The development of methods of measurement for semiconductor materials, process control, and devices is reported. Significant accomplishments include: (1) Completion of an initial identification of the more important problems in process control for integrated circuit fabrication and assembly; (2) preparations for making silicon bulk resistivity wafer standards available to the industry; and (3) establishment of the relationship between carrier mobility and impurity density in silicon. Work is continuing on measurement of resistivity of semiconductor crystals; characterization of generation-recombination-trapping centers, including gold, in silicon; evaluation of wire bonds and die attachment; study of scanning electron microscopy for wafer inspection and test; measurement of thermal properties of semiconductor devices; determination of S-parameters and delay time in junction devices; and characterization of noise and conversion loss of microwave detector diodes.

Bullis, W. M.↗

Novel Materials, Processing, and Device Technologies for Space Exploration with Potential Dual-Use Applications

We highlight results of a broad spectrum of efforts on lower-temperature processing of nanomaterials, novel approaches to energy conversion, and environmentally rugged devices. Solution-processed quantum dots of copper indium chalcogenide semiconductors and multi-walled carbon nanotubes from lower-temperature spray pyrolysis are enabled by novel (precursor) chemistry. Metal-doped zinc oxide (ZnO) nanostructured components of photovoltaic cells have been grown in solution at low temperature on a conductive indium tin oxide substrate. Arrays of ZnO nanorods can be templated and decorated with various semiconductor and metallic nanoparticles. Utilizing ZnO in a more broadly defined energy conversion sense as photocatalysts, unwanted organic waste materials can potentially be re-purposed. Current efforts on charge carrier dynamics in nanoscale electrode architectures used in photoelectrochemical cells for generating solar electricity and fuels are described. The objective is to develop oxide nanowire-based electrode architectures that exhibit improved charge separation, charge collection and allow for efficient light absorption. Investigation of the charge carrier transport and recombination properties of the electrodes will aid in the understanding of how nanowire architectures improve performance of electrodes for dye-sensitized solar cells. Nanomaterials can be incorporated in a number of advanced higher-performance (i.e. mass specific power) photovoltaic arrays. Advanced technologies for the deposition of 4H-silicon carbide are described. The use of novel precursors, advanced processing, and process studies, including modeling are discussed from the perspective of enhancing the performance of this promising material for enabling technologies such as solar electric propulsion. Potential impact(s) of these technologies for a variety of aerospace applications are highlighted throughout. Finally, examples are given of technologies with potential spin-offs for dual-use or terrestrial applications.

thin films↗

Multimode Characterization Approach for Understanding Cell-Level PV Performance and Degradation

Cell-level degradation processes impact the economic viability and large-scale deployment prospects for both established and emerging photovoltaic (PV) technologies. This project addresses the need to develop experimental and device-modeling approaches for studying cell-level degradation processes in photovoltaic (PV) devices using a variety of characterization techniques that provide access to complementary material and device properties. Our results demonstrate that by coupling characterization results with device modeling it is possible to develop comprehensive understanding of processes leading to performance limitations and degradation. This project developed a suite of novel measurement techniques including pulsed-light-bias operando X-ray and photoelectron spectroscopy (popXPS), light-biased scanning microwave impedance microscopy (sMIM), and near-field transport imaging (TI). In addition, operando characterization methodologies and in situ stressing capabilities have been developed and applied for techniques including electron-beam-induced current (EBIC), cathodoluminescence (CL), and Kelvin probe force microscopy (KPFM). Device-physics models were developed and applied to simulate correlative, multi-mode measurements to extract material and device parameters that control performance degradation. These characterization and modeling techniques were applied in a multi-mode approach to probe cell-level degradation mechanisms in Cd(Se,Te) and hybrid perovskite PV devices. Together these efforts contribute to foundational PV degradation science by establishing a framework for understanding PV performance degradation at the cell level and benefit the U.S. PV industry by providing resources in the form of novel experimental capabilities, knowledge gained, and available expertise that can accelerate research and development of improved PV device materials and architectures. The project provided a comprehensive understanding of degradation in baseline Cd(Se,Te) solar cells provided by our collaborators at Colorado State University (CSU). EBIC and CL-based measurements and revealed unusual collection and recombination profiles in these devices, which underwent significant changes with during stressing. KPFM and operando XPS measurements showed that device stressing permanently alters energy-band alignments at the (Mg,Zn)O/Cd(Se,Te) interface, which in turn account for an observed loss in fill factor. Studies on hybrid perovskite devices were hampered to a significant extent by delays related to the pandemic. Nevertheless, a set of hybrid perovskite devices (supplied through an NREL-industry partnership) were stress tested and characterized with techniques including EBIC, sMIM, popXPS/popUPS and optically excited TI. Available results from these measurements informed the device modeling effort and suggest that defects and related band offsets at the C60/LiF/hybrid perovskite interface are the primary source of degradation in these devices.

14 SOLAR ENERGY↗

Silicon carbide, a high temperature semiconductor

Electronic applications are described that would benefit from the availability of high temperature semiconductor devices. Potential materials for these devices are compared and the problems of each are discussed. Recent progress in developing silicon carbide as a high temperature semiconductor is described.

Powell, J. A.↗

Thermoelectric devices based on materials with filled skutterudite structures

A class of thermoelectric compounds based on the skutterudite structure with heavy filling atoms in the empty octants and substituting transition metals and main-group atoms. High Seebeck coefficients and low thermal conductivities are achieved in combination with large electrical conductivities in these filled skutterudites for large ZT values. Substituting and filling methods are disclosed to synthesize skutterudite compositions with desired thermoelectric properties. A melting and/or sintering process in combination with powder metallurgy techniques is used to fabricate these new materials.

Fleurial, Jean-Pierre↗