NASA NTRS ยท 19840006864
Silicon carbide, a high temperature semiconductor
Abstract
Electronic applications are described that would benefit from the availability of high temperature semiconductor devices. Potential materials for these devices are compared and the problems of each are discussed. Recent progress in developing silicon carbide as a high temperature semiconductor is described.
Keep this discovery
Explore connections, maps & timelines
Powell, J. A.. 1983-01-01. Silicon carbide, a high temperature semiconductor. https://ntrs.nasa.gov/citations/19840006864
Cite the original work for its findings. Save a collection to share your selection of sources.