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NASA NTRS2010

Planar Submillimeter-Wave Mixer Technology with Integrated Antenna

High-performance mixers at terahertz frequencies require good matching between the coupling circuits such as antennas and local oscillators and the diode embedding impedance. With the availability of amplifiers at submillimeter wavelengths and the need to have multi-pixel imagers and cameras, planar mixer architecture is required to have an integrated system. An integrated mixer with planar antenna provides a compact and optimized design at terahertz frequencies. Moreover, it leads to a planar architecture that enables efficient interconnect with submillimeter-wave amplifiers. In this architecture, a planar slot antenna is designed on a thin gallium arsenide (GaAs) membrane in such a way that the beam on either side of the membrane is symmetric and has good beam profile with high coupling efficiency. A coplanar waveguide (CPW) coupled Schottky diode mixer is designed and integrated with the antenna. In this architecture, the local oscillator (LO) is coupled through one side of the antenna and the RF from the other side, without requiring any beam sp litters or diplexers. The intermediate frequency (IF) comes out on a 50-ohm CPW line at the edge of the mixer chip, which can be wire-bonded to external circuits. This unique terahertz mixer has an integrated single planar antenna for coupling both the radio frequency (RF) input and LO injection without any diplexer or beamsplitters. The design utilizes novel planar slot antenna architecture on a 3- mthick GaAs membrane. This work is required to enable future multi-pixel terahertz receivers for astrophysics missions, and lightweight and compact receivers for planetary missions to the outer planets in our solar system. Also, this technology can be used in tera hertz radar imaging applications as well as for testing of quantum cascade lasers (QCLs).

Chattopadhyay, Gautam↗
NASA NTRS2005

HEMT Frequency Doubler with Output at 300 GHz

An active frequency doubler in the form of an InP-based monolithic microwave integrated circuit (MMIC) containing a high-electron-mobility transistor (HEMT) has been demonstrated in operation at output frequencies in the vicinity of 300 GHz. This is the highestfrequency HEMT doubler reported to date, the next-highest-frequency active HEMT doubler having been previously reported to operate at 180 GHz. While the output power of this frequency doubler is less than that of a typical Schottky diode, this frequency doubler is considered an intermediate product of a continuing effort to realize the potential of active HEMT frequency doublers to operate with conversion efficiencies greater than those of passive diode frequency doublers. An additional incentive for developing active HEMT frequency doublers lies in the fact that they can be integrated with amplifiers, oscillators, and other circuitry on MMIC chips. The circuitry of the doubler MMIC (see Figure 1) features grounded coplanar waveguides. Air bridges and vias are used to make contact with the ground plane. The HEMT is biased for Class-A operation (in which current is conducted throughout each cycle of oscillation), which would ordinarily be better suited to linear amplification than to frequency doubling. Ordinarily, class-B operation (in which current is conducted during about half of each cycle of oscillation) would be more suitable for frequency doubling because of the essential nonlinearity of partial-cycle conduction. The reason for the unusual choice of class A was that computational simulations had shown that in this case, the efficiency in class B would be less than in class A. The input matching circuit of this doubler includes transmission lines that afford a good impedance match at the fundamental frequency, plus an open stub to prevent leakage of the second harmonic through the input terminals. The output circuit was designed to suppress the fundamental while providing a good match for the second harmonic.

Samoska, Lorene↗
NASA NTRS2010

PVD Silicon Carbide as a Thin Film Packaging Technology for Antennas on LCP Substrates for Harsh Environments

This paper describes an effort to develop a thin film packaging technology for microfabricated planar antennas on polymeric substrates based on silicon carbide (SiC) films deposited by physical vapor deposition (PVD). The antennas are coplanar waveguide fed dual frequency folded slot antennas fabricated on liquid crystal polymer (LCP) substrates. The PVD SiC thin films were deposited directly onto the antennas by RF sputtering at room temperature at a chamber pressure of 30 mTorr and a power level of 300 W. The SiC film thickness is 450 nm. The return loss and radiation patterns were measured before and after the SiC-coated antennas were submerged into perchloric acid for 1 hour. No degradation in RF performance or physical integrity of the antenna was observed.

Scardelletti, Maximilian C.↗
NASA NTRS2003

80-GHz MMIC HEMT Voltage-Controlled Oscillator

A voltage-controlled oscillator (VCO) that operates in the frequency range from 77.5 to 83.5 GHz has been constructed in the form of a monolithic microwave integrated circuit (MMIC) that includes high-electron-mobility transistors (HEMTs). This circuit is a prototype of electronically tunable signal sources in the 75-to-110-GHz range, needed for communication, imaging, and automotive radar applications, among others. This oscillator (see Figure 1) includes two AlInAs/GaInAs/InP HEMTs. One HEMT serves mainly as an oscillator gain element. The other HEMT serves mainly as a varactor for controlling the frequency: the frequency-control element is its gate-to-source capacitance, which is varied by changing its gate supply voltage. The gain HEMT is biased for class-A operation (meaning that current is conducted throughout the oscillation cycle). Grounded coplanar waveguides are used as impedance-matching transmission lines, the input and output matching being chosen to sustain oscillation and maximize output power. Air bridges are placed at discontinuities to suppress undesired slot electromagnetic modes. A high density of vias is necessary for suppressing a parallel-plate electromagnetic mode that is undesired because it can propagate energy into the MMIC substrate. Previous attempts at constructing HEMT-based oscillators yielded circuits with relatively low levels of output power and narrow tuning ranges. For example, one HEMT VCO reported in the literature had an output power of 7 dBm (.5 mW) and a tuning range 2-GHz wide centered approximately at a nominal frequency of 77 GHz. In contrast, as shown in Figure 2, the present MMIC HEMT VCO puts out a power of 12.5 dBm (.18 mW) or more over the 6-GHz-wide frequency range from 77.5 to 83.5 GHz

Samoska, Lorene↗
NASA NTRS2003

120-GHz HEMT Oscillator With Surface-Wave-Assisted Antenna

Two monolithic microwave integrated circuits (MMICs) have been designed and built to function together as a source of electromagnetic radiation at a frequency of 120 GHz. One of the MMICs is an oscillator and is the highest-power 120-GHz oscillator reported thus far in the literature. The other MMIC is an end-fire antenna that radiates the oscillator signal. Although these MMICs were constructed as separate units and electrically connected with wire bonds, future oscillator/ antenna combinations could readily be fabricated as monolithic integrated units. Such units could be used as relatively high-power solid-state microwave sources in diverse applications that include automotive radar, imaging, scientific instrumentation, communications, and radio astronomy. As such, these units would be attractive alternatives to vacuum-tube oscillators, which are still used to obtain acceptably high power in the frequency range of interest. The oscillator (see figure) includes a high-electron-mobility transistor (HEMT), with gate-periphery dimensions of 4 by 37 m, in a common-source configuration. The series feedback element of the oscillator is a grounded coplanar waveguide (CPW) at the source. The HEMT is biased for class-A operation (meaning that current is conducted throughout the oscillation cycle) to maximize the output power of the oscillator. Input and output impedance-matching circuit elements are designed to maximize output power and to establish the conditions needed for oscillation. The design of the antenna takes advantage of surface waves, which, heretofore, have been regarded as highly disadvantageous because they can leak power and degrade the performances of antennas that have not been designed to exploit them. Measures taken to suppress surface waves have included complex machining of circuit substrates and addition of separate substrates. These measures are difficult to implement in standard MMIC fabrication processes. In contrast, because the design of the present antenna eliminates the need to suppress surface waves, the fabrication of the antenna is fully compatible with standard MMIC fabrication processes.

Samoska, Lorene↗
NASA NTRS2003

164-GHz MMIC HEMT Frequency Doubler

A monolithic microwave integrated circuit (MMIC) that includes a high-electron-mobility transistor (HEMT) has been developed as a prototype of improved frequency doublers for generating signals at frequencies greater than 100 GHz. Signal sources that operate in this frequency range are needed for a variety of applications, notably including general radiometry and, more specifically, radiometric remote sensing of the atmosphere. Heretofore, it has been common practice to use passive (diode-based) frequency multipliers to obtain frequencies greater than 100 GHz. Unfortunately, diode-based frequency multipliers are plagued by high DC power consumption and low conversion efficiency. Moreover, multiplier diodes are not easily integrated with such other multiplier-circuit components as amplifiers and oscillators. The goals of developing the present MMIC HEMT frequency doubler were (1) to utilize the HEMT as an amplifier to increase conversion efficiency (more precisely, to reduce conversion loss), thereby increasing the output power for a given DC power consumption or, equivalently, reducing the DC power consumption for a given output power; and (2) to provide for the integration of amplifier and oscillator components on the same chip. The MMIC frequency doubler (see Figure 1) contains an AlInAs/GaInAs/InP HEMT biased at pinch-off to make it function as a class-B amplifier (meaning that it conducts in half-cycle pulses). Grounded coplanar waveguides (GCPWs) are used as impedance-matching transmission lines. Air bridges are placed at discontinuities to suppress undesired slot electromagnetic modes. Another combination of GCPWs also serves both as a low-pass filter to suppress undesired oscillations at frequencies below 60 GHz and as a DC blocker. Large decoupling capacitors and epitaxial resistors are added in the drain and gate lines to suppress bias oscillations. At the output terminal, the fundamental frequency is suppressed by a quarter-wave open stub, which presents a short circuit at the fundamental frequency and an open circuit at the second harmonic. At an input power of 7 mW, the output power and conversion loss at an output frequency of 164 GHz were found to be 5 dBm (approximately equal to 3.2 mW) and 2 dB, respectively, with a 3-dB output-power bandwidth of 14 GHz. This is the best performance reported to date for an MMIC HEMT frequency doubler above 100 GHz.

Samoska, Lorene↗
NASA NTRS2003

Techniques for Characterizing Microwave Printed Antennas

The combination of a de-embedding technique and a direct on-substrate measurement technique has been devised to enable measurement of the electrical characteristics (impedances, scattering parameters, and gains) of microwave printed antennas that may be formed integrally with feed networks that include slot lines, coplanar striplines, and/or coplanar waveguides. The combination of techniques eliminates the need for custom test fixtures, including transitions between (1) coaxial or waveguide feed lines in typical test equipment and (2) the planar waveguide structures of the printed circuits under test. The combination of techniques can be expected to be especially useful for rapid, inexpensive, and accurate characterization of antennas for miniature wireless communication units that operate at frequencies from a few to tens of gigahertz.

Simons, Rainee↗
NASA NTRS2011

Broadband Via-Less Microwave Crossover Using Microstrip-CPW Transitions

The front-to-back interface between microstrip and CPW (coplanar waveguide) typically requires complex fabrication or has high radiation loss. The microwave crossover typically requires a complex fabrication step. The prior art in microstrip-CPW transition requires a physical vias connection between the microstrip and CPW line on a separate layer. The via-less version of this transition was designed empirically and does not have a close form solution. The prior art of the micro wave crossover requires either additional substrate or wire bond as an air bridge to isolate two microwave lines at the crossing junction. The disadvantages are high radiation loss, no analytical solution to the problem, lengthy simulation time, and complex fabrication procedures to generate air bridges or via. The disadvantage of the prior crossover is a complex fabrication procedure, which also affects the device reliability and yield. This microstrip-CPW transition is visualized as two microstrip-slotline transitions combined in a way that the radiation from two slotlines cancels each other out. The invention is designed based on analytical methods; thus, it significantly reduces the development time. The crossover requires no extra layer to cross two microwave signals and has low radiation loss. The invention is simple to fabricate and design. It produces low radiation loss and can be designed with low insertion loss, with some tradeoff with signal isolation. The microstrip-CPW transition is used as an interface to connect between the device and the circuit outside the package. The via-less microwave crossover is used to allow two signals to cross without using an extra layer or fabrication processing step to enable this function. This design allows the solution to be determined entirely though analytical techniques. In addition, a planar via-less microwave crossover using this technique was proposed. The experimental results show that the proposed crossover at 5 GHz has a minimum isolation of 32 dB. It also has low in-band insertion loss and return loss of 1.2 dB and 18 dB, respectively, over more than 44 percent of bandwidth at room temperature. This microstrip-CPW transition requires the microstrip line to be split into two sections. Each section is connected to a microstrip quarter-wavelength openended stub. A slotline is also placed perpendicular to the microstrip section. The slot is connected to a grounded-end quarter-wavelength slotline and generates a microstrip-slotline transition. When two of these sections are placed in parallel and with the microstrip section combined at transition, a microstrip- CPW transition is formed. The slotline radiation is suppressed as two slots are excited with the electric field in an opposite direction, which cancels the radiation in far field. The invention on the crossover consists of the invented microstrip-CPW transitions combined back-to-back and a microstrip low-pass filter. One signal is crossed through to the microstrip layer, while the other signal is crossed through the CPW line located on the ground plane of the microstrip line. The microstrip low-pass filter produces a narrow line at the crossing point to enhance the system isolation. It also produces broadband response in the operating frequency band. The microstrip-CPW transition allows a microwave signal to travel from microstrip line to CPW line with low radiation loss. The crossover allows two microwave signals to cross with minimal parasitic coupling.

Stevenson, Thomas↗
NASA NTRS2011

Wheel-Based Ice Sensors for Road Vehicles

Wheel-based sensors for detection of ice on roads and approximate measurement of the thickness of the ice are under development. These sensors could be used to alert drivers to hazardous local icing conditions in real time. In addition, local ice-thickness measurements by these sensors could serve as guidance for the minimum amount of sand and salt required to be dispensed locally onto road surfaces to ensure safety, thereby helping road crews to utilize their total supplies of sand and salt more efficiently. Like some aircraft wing-surface ice sensors described in a number of previous NASA Tech Briefs articles, the wheelbased ice sensors are based, variously, on measurements of changes in capacitance and/or in radio-frequency impedance as affected by ice on surfaces. In the case of ice on road surfaces, the measurable changes in capacitance and/or impedance are attributable to differences among the electric permittivities of air, ice, water, concrete, and soil. In addition, a related phenomenon that can be useful for distinguishing between ice and water is a specific transition in the permittivity of ice at a temperature- dependent frequency. This feature also provides a continuous calibration of the sensor to allow for changing road conditions. Several configurations of wheel-based ice sensors are under consideration. For example, in a simple two-electrode capacitor configuration, one of the electrodes would be a circumferential electrode within a tire, and the ground would be used as the second electrode. Optionally, the steel belts that are already standard parts of many tires could be used as the circumferential electrodes. In another example (see figure), multiple electrodes would be embedded in rubber between the steel belt and the outer tire surface. These electrodes would be excited in alternating polarities at one or more suitable audio or radio frequencies to provide nearly continuous monitoring of the road surface under the tire. In still another example, one or more microwave stripline(s) or coplanar waveguide(s) would be embedded in a tire near its outer surface; in comparison with lower-frequency capacitive devices, a device of this type could be more sensitive.

Arndt, G. Dickey↗
NASA NTRS2002

Coupling Between Microstrip Lines and Finite Ground Coplanar Lines Embedded in Polyimide Layers for 3D-MMICs on Silicon

Three-dimensional circuits built upon multiple layers of polyimide are required for constructing Si/SiGe monolithic microwave/mm-wave integrated circuits on CMOS (low resistivity) Si wafers. It is expected that these circuits will replace the ones fabricated on GaAs and reduce the overall system cost. However, the closely spaced transmission lines that are required for a high-density circuit environment are susceptible to high levels of cross-coupling, which degrades the overall circuit performance. In this paper, theoretical and experimental results on coupling and ways to reduce it are presented for two types of transmission lines: a) the microstrip line and b) the Finite Ground Coplanar (FGC) line. For microstrip lines it is shown that a fence of metalized via-holes can significantly reduce coupling, especially in the case when both lines are on the same polyimide layer or when the shielding structure extends through several polyimide layers. For closely spaced microstrip lines, coupling is lower for a metal filled trench shield than a via-hole fence. Coupling amongst microstrip lines is dependent on the ratio of line separation to polyimide thickness and is primarily due to magnetic fields. For FGC lines it is shown that they have in general low coupling that can be reduced significantly when there is even a small gap between the ground planes of each line. FGC lines have approximately 8 dB lower coupling than coupled coplanar waveguides (CPW). In addition, forward and backward characteristics of the FGC lines do not resemble those of other transmission lines such as microstrip. Therefore, the coupling mechanism of the FGC lines is different compared to thin film microstrip lines.

Ponchak, G. E.↗
NASA NTRS2013

Planar Superconducting Millimeter-Wave/Terahertz Channelizing Filter

This innovation is a compact, superconducting, channelizing bandpass filter on a single-crystal (0.45 m thick) silicon substrate, which operates from 300 to 600 GHz. This device consists of four channels with center frequencies of 310, 380, 460, and 550 GHz, with approximately 50-GHz bandwidth per channel. The filter concept is inspired by the mammalian cochlea, which is a channelizing filter that covers three decades of bandwidth and 3,000 channels in a very small physical space. By using a simplified physical cochlear model, and its electrical analog of a channelizing filter covering multiple octaves bandwidth, a large number of output channels with high inter-channel isolation and high-order upper stopband response can be designed. A channelizing filter is a critical component used in spectrometer instruments that measure the intensity of light at various frequencies. This embodiment was designed for MicroSpec in order to increase the resolution of the instrument (with four channels, the resolution will be increased by a factor of four). MicroSpec is a revolutionary wafer-scale spectrometer that is intended for the SPICA (Space Infrared Telescope for Cosmology and Astrophysics) Mission. In addition to being a vital component of MicroSpec, the channelizing filter itself is a low-resolution spectrometer when integrated with only an antenna at its input, and a detector at each channel s output. During the design process for this filter, the available characteristic impedances, possible lumped element ranges, and fabrication tolerances were identified for design on a very thin silicon substrate. Iterations between full-wave and lumped-element circuit simulations were performed. Each channel s circuit was designed based on the availability of characteristic impedances and lumped element ranges. This design was based on a tabular type bandpass filter with no spurious harmonic response. Extensive electromagnetic modeling for each channel was performed. Four channels, with 50-GHz bandwidth, were designed, each using multiple transmission line media such as microstrip, coplanar waveguide, and quasi-lumped components on 0.45- m thick silicon. In the design process, modeling issues had to be overcome. Due to the extremely high frequencies, very thin Si substrate, and the superconducting metal layers, most commercially available software fails in various ways. These issues were mitigated by using alternative software that was capable of handling them at the expense of greater simulation time. The design of on-chip components for the filter characterization, such as a broadband antenna, Wilkinson power dividers, attenuators, detectors, and transitions has been completed.

Ehsan, Negar↗
NASA NTRS2013

A Tandem Coupler for Terahertz Integrated Circuits

A coplanar waveguide 3 dB quadrature coupler operating from 500 to 700 GHz is designed, fabricated and measured. On-wafer measurements demonstrate an amplitude balance of +/-2 dB and phase balance of +/-20 deg.

CPW↗
NASA NTRS1993

Effect of Parasitic Dielectric Resonators on CPW/Aperture-Coupled Dielectric Resonator Antennas

The effects of parasitic dielectric resonators on the HE (sub 11 sigma) and HE (High Efficiency) (sub 13 sigma) modes of a cylindrical dielectric resonator antenna (DRA) have been studied. The DRA was excited electromagnetically with a grounded coplanar waveguide through an aperture in the common ground plane. Strong couplings were observed for the HE (sub 11 sigma) mode with the parasitic element superimposed on the driven DRA, and for the HE (sub 13 sigma) mode with parasitic elements placed on both sides of the driven DRA. Results indicate significant enhancement in bandwidth for both modes, and good radiation patterns for the HE (sub 11 sigma) mode.

Simons, R. N.↗
NASA NTRS2017

Toward Large FOV High-Resolution X-Ray Imaging Spectrometer: Microwave Multiplexed Readout of 32 TES Microcalorimeters

We performed a small-scale demonstration at GSFC of high-resolution x-ray TES microcalorimeters read out using a microwave SQUID multiplexer. This work is part of our effort to develop detector and readout technologies for future space based x-ray instruments such as the microcalorimeter spectrometer envisaged for Lynx, a large mission concept under development for the Astro 2020 Decadal Survey. In this paper we describe our experiment, including details of a recently designed, microwave-optimized low-temperature setup that is thermally anchored to the 50 mK stage of our laboratory ADR. Using a ROACH2 FPGA at room temperature, we simultaneously read out 32 pixels of a GSFC-built detector array via a NIST-built multiplexer chip with Nb coplanar waveguide resonators coupled to RF SQUIDs. The resonators are spaced 6 MHz apart (at approx. 5.9 GHz) and have quality factors of approximately 15,000. Using flux-ramp modulation frequencies of 160 kHz we have achieved spectral resolutions of 3 eV FWHM on each pixel at 6 keV. We will present the measured system-level noise and maximum slew rates, and briefly describe the implications for future detector and readout design.

Yoon, Wonsik↗
NASA NTRS2016

Superconducting Vacuum-Gap Crossovers for High Performance Microwave Applications

The design and fabrication of low-loss wide-bandwidth superconducting vacuum-gap crossovers for high performance millimeter wave applications are described. In order to reduce ohmic and parasitic losses at millimeter wavelengths a vacuum gap is preferred relative to dielectric spacer. Here, vacuum-gap crossovers were realized by using a sacrificial polymer layer followed by niobium sputter deposition optimized for coating coverage over an underlying niobium signal layer. Both coplanar waveguide and microstrip crossover topologies have been explored in detail. The resulting fabrication process is compatible with a bulk micro-machining process for realizing waveguide coupled detectors, which includes sacrificial wax bonding, and wafer backside deep reactive ion etching for creation of leg isolated silicon membrane structures. Release of the vacuum gap structures along with the wax bonded wafer after DRIE is implemented in the same process step used to complete the detector fabrication. 

superconductor↗
NASA NTRS2018

Toward Large Field-Of-View High-Resolution X-Ray Imaging Spectrometers: Microwave Multiplexed Readout of 28 TES Microcalorimeters

We performed small-scale demonstrations at GSFC of high-resolution Xray TES microcalorimeters read out using a microwave SQUID multiplexer. This work is part of our effort to develop detector and readout technologies for future space-based X-ray instruments such as the microcalorimeter spectrometer envisaged for Lynx, a large mission concept under development for the Astro 2020 Decadal Survey. In this paper we describe our experiment, including details of a recently designed, microwave-optimized low-temperature setup that is thermally anchored to the 55mKstage of our laboratory ADR. Using aROACH2 FPGA at room temperature, we read out pixels of a GSFC-built detector array via a NIST-built multiplexer chip with Nb coplanar waveguide resonators coupled to rf-SQUIDs. The resonators are spaced 6 MHz apart (at ∼ 5.9 GHz) and have quality factors of ∼ 15,000. In our initial demonstration, we used flux-ramp modulation frequencies of 125 kHz to read out 5 pixels simultaneously and achieved spectral resolutions of 2.8-3.1 eV FWHM at 5.9 keV. Our subsequent work is ongoing: to-date we have achieved a median spectral resolution of 3.4 eV FWHM at 5.9 keV while reading out 28 pixels simultaneously with flux-ramp frequencies of 160 kHz. We present the measured system-level noise and maximum slew rates and briefly describe our future development work.

Yoon, W.↗
NASA NTRS2016

Fabricating with Crystalline Si to Improve Superconducting Detector Performance

We built and measured radio-frequency (RF) loss tangent, tan δ, evaluation structures using float-zone quality silicon-on-insulator (SOI) wafers with 5 μm thick device layers. Superconducting Nb components were fabricated on both sides of the SOI Si device layer. Our main goals were to develop a robust fabrication for using crystalline Si (c-Si) dielectric layers with superconducting Nb components in a wafer bonding process and to confirm that tan δ with c-Si dielectric layers was reduced at RF frequencies compared to devices fabricated with amorphous dielectrics, such as SiO2 and SixNy, where tan δ ~ 10(exp -3). Our primary test structure used a Nb coplanar waveguide (CPW) readout structure capacitively coupled to LC resonators, where the capacitors were defined as parallel-plate capacitors on both sides of a c-Si device layer using a wafer bonding process with benzocyclobutene (BCB) wafer bonding adhesive. Our control experiment, to determine the intrinsic tan δ in the SOI device layer without wafer bonding, also used Nb CPW readout coupled to LC resonators; however, the parallel-plate capacitors were fabricated on both sides of the Si device layer using a deep reactive ion etch (DRIE) to access the c-Si underside through the buried oxide and handle Si layers in the SOI wafers. We found that our wafer bonded devices demonstrated F· δ = (8 +/- 2) × 10(exp -5), where F is the filling fraction of two-level states (TLS). For the control experiment, F· δ = (2.0 +/- 0.6) × 10(exp -5), and we discuss what may be degrading the performance in the wafer bonded devices as compared to the control devices.

Beyer, A. D↗
NASA NTRS2016

Fabricating with Crystalline Si to Improve Superconducting Detector Performance

We built and measured radio-frequency (RF) loss tangent, tan d, evaluation structures using float-zone quality silicon-on-insulator (SOI) wafers with 5 µ m thick device layers. Superconducting Nb components were fabricated on both sides of the SOI Si device layer. Our main goals were to develop a robust fabrication for using crystalline Si (c-Si) dielectric layers with superconducting Nb components in a wafer bonding process and to confirm that tan d with c-Si dielectric layers was reduced at RF frequencies compared to devices fabricated with amorphous dielectrics, such as SiO2 and SixNy, where tan d ~ 10-3. Our primary test structure used a Nb coplanar waveguide (CPW) readout structure capacitively coupled to LC resonators, where the capacitors were defined as parallel-plate capacitors on both sides of a c-Si device layer using a wafer bonding process with benzocyclobutene (BCB) wafer bonding adhesive. Our control experiment, to determine the intrinsic tan d in the SOI device layer without wafer bonding, also used Nb CPW readout coupled to LC resonators; however, the parallel-plate capacitors were fabricated on both sides of the Si device layer using a deep reactive ion etch (DRIE) to access the c-Si underside through the buried oxide and handle Si layers in the SOI wafers. We found that our wafer bonded devices demonstrated F· d = (8 ± 2) × 10-5, where F is the filling fraction of two-level states (TLS). For the control experiment, F· d = (2.0 ± 0.6) × 10-5, and we discuss what may be degrading the performance in the wafer bonded devices as compared to the control devices.

Beyer, A D↗