DOE OSTI · 2998292
Imaging the Acceptor Wave Function Anisotropy in Silicon
Abstract
We present the first scanning tunneling microscopy (STM) image of hydrogenic acceptor wave functions in silicon. These acceptor states appear as square-ring-like features in STM images and originate from near-surface defects introduced by high-energy bismuth implantation into a silicon (001) wafer. Scanning tunneling spectroscopy confirms the formation of a p-type surface. Effective-mass and tight-binding calculations provide an excellent description of the observed square-ring-like features, confirming their acceptor character and attributing their symmetry to the light- and heavy-hole band degeneracy in silicon. A detailed understanding of the energetic and spatial properties of acceptor wave functions in silicon is essential for engineering large-scale acceptor-based quantum devices.
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Siegl, Manuel [Univ. College London (United Kingdom)], Zanon, Julian [Eindhoven Univ. of Technology (Netherlands)] (ORCID:0000000228301361), Sink, Joseph [Univ. of Iowa, Iowa City, IA (United States)] (ORCID:0000000249691565), Rodrigues da Cruz, Adonai [Univ. of Iowa, Iowa City, IA (United States)] (ORCID:000000018719399X), Hedgeland, Holly [Univ. College London (United Kingdom)] (ORCID:0000000337037942), Curson, Neil J. [Univ. College London (United Kingdom)] (ORCID:0000000256610559), Flatté, Michael E. [Eindhoven Univ. of Technology (Netherlands)] (ORCID:0000000150931549), Schofield, Steven R. [Univ. College London (United Kingdom)] (ORCID:0000000207273015). 2025-08-21. Imaging the Acceptor Wave Function Anisotropy in Silicon. https://doi.org/10.1021/acs.nanolett.5c02675
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