DOE OSTI · 1831565
Floating-gate memory based on ion-insertion electrodes for neuromorphic computing.
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Fuller, Elliot James, Li, Yiyang, Agarwal, Sapan, Jacobs-Gedrim, Robin B, James, Conrad D., Marinella, Matthew J. 2020-11-01. Floating-gate memory based on ion-insertion electrodes for neuromorphic computing.. https://www.osti.gov/biblio/1831565
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