Hot Raman amplification

Abstract

A parameter regime is identified for Raman amplification at high temperatures, where deleterious laser–plasma instabilities that limit current amplification experiments are avoided, yet sufficient gain for an effective power amplifier is attained. Furthermore, calculations and kinetic simulations show that even at high temperatures, an amplifier is able to satisfy the criteria set forth to present a proof-of-principle system scalable to high powers, where energy transfer efficiencies are ≥30%, intensity gains are ≥10, and output intensities are ≥100× the pump intensity.