Radiation tolerant microstructured three dimensional semiconductor structure

Frye, Clint; Henderson, Roger A.; Murphy, John Winter; Nikolic, Rebecca J.; Qu, Dongxia; Shao, Qinghui; Stoyer, Mark A.; Voss, Lars

DOE OSTI · 1651028

Radiation tolerant microstructured three dimensional semiconductor structure

Frye, Clint·Henderson, Roger A.·Murphy, John Winter·Nikolic, Rebecca J.·Qu, Dongxia·Shao, Qinghui·Stoyer, Mark A.·Voss, Lars

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Abstract

According to one embodiment, a product includes an array of three dimensional structures, a cavity region between each of the three dimensional structures, and a first material in contact with at least one surface of each of the three dimensional structures. In addition, each of the three dimensional structures includes a semiconductor material, where at least one dimension of each of the three dimensional structures is in a range of about 0.5 microns to about 10 microns. Moreover, the first material is configured to provide high energy particle and/or ray emissions.

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Frye, Clint, Henderson, Roger A., Murphy, John Winter, Nikolic, Rebecca J., Qu, Dongxia, Shao, Qinghui, Stoyer, Mark A., Voss, Lars. 2020-06-16. Radiation tolerant microstructured three dimensional semiconductor structure. https://www.osti.gov/biblio/1651028

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