Engineering topics

Androjna, D.

Publications and source records attributed to Androjna, D..

5 records

NASA NTRS2008

Application of Smart Solid State Sensor Technology in Aerospace Applications

Aerospace applications require a range of chemical sensing technologies to monitor conditions in both space vehicles and aircraft operations. One example is the monitoring of oxygen. For example, monitoring of ambient oxygen (O2) levels is critical to ensuring the health, safety, and performance of humans living and working in space. Oxygen sensors can also be incorporated in detection systems to determine if hazardous leaks are occurring in space propulsion systems and storage facilities. In aeronautic applications, O2 detection has been investigated for fuel tank monitoring. However, as noted elsewhere, O2 is not the only species of interest in aerospace applications with a wide range of species of interest being relevant to understand an environmental or vehicle condition. These include combustion products such as CO, HF, HCN, and HCl, which are related to both the presence of a fire and monitoring of post-fire clean-up operations. This paper discusses the development of an electrochemical cell platform based on a polymer electrolyte, NAFION, and a three-electrode configuration. The approach has been to mature this basic platform for a range of applications and to test this system, combined with "Lick and Stick" electronics, for its viability to monitor an environment related to astronaut crew health and safety applications with an understanding that a broad range of applications can be addressed with a core technology.

Hunter, Gary W.↗

NASA NTRS2007

Silicon Carbide Gas Sensors for Propulsion Emissions and Safety Applications

Silicon carbide (SiC) based gas sensors have the ability to meet the needs of a range of aerospace propulsion applications including emissions monitoring, leak detection, and hydrazine monitoring. These applications often require sensitive gas detection in a range of environments. An effective sensing approach to meet the needs of these applications is a Schottky diode based on a SiC semiconductor. The primary advantage of using SiC as a semiconductor is its inherent stability and capability to operate at a wide range of temperatures. The complete SiC Schottky diode gas sensing structure includes both the SiC semiconductor and gas sensitive thin film metal layers; reliable operation of the SiC-based gas sensing structure requires good control of the interface between these gas sensitive layers and the SiC. This paper reports on the development of SiC gas sensors. The focus is on two efforts to better control the SiC gas sensitive Schottky diode interface. First, the use of palladium oxide (PdOx) as a barrier layer between the metal and SiC is discussed. Second, the use of atomically flat SiC to provide an improved SiC semiconductor surface for gas sensor element deposition is explored. The use of SiC gas sensors in a multi-parameter detection system is briefly discussed. It is concluded that SiC gas sensors have potential in a range of propulsion system applications, but tailoring of the sensor for each application is necessary.

Hunter, G. W.↗

NASA NTRS2006

Miniaturized Amperometric Solid Electrolyte Carbon Dioxide Sensors

A miniaturized electrochemical carbon dioxide (CO2) sensor using Na3Z r2Si2PO12 (NASICON) as a solid electrolyte has been fabricated and de monstrated. Microfabrication techniques were used for sensor fabricat ion to yield a sensing area around 1.0 mm x 1.1 mm. The NASICON solid electrolyte and the Na2CO3/BaCO3 (1:1.7 molar ratio) auxiliary elect rolyte were deposited by sputtering in between and on top of the inte rdigitated finger-shaped platinum electrodes. This structure maximize s the length of the three-phase boundary (electrode, solid electrolyt e, and auxiliary electrolyte), which is critical for gas sensing. The robust CO2 sensor operated up to 600 C in an amperometric mode and a ttempts were made to optimize sensor operating parameters. Concentrat ions of CO2 between 0.02% and 4% were detected and the overall sensor performance was evaluated. Linear response of sensor current output to ln[CO2 concentration] ranging from 0.02% to 1% was achieved.

Hunter, G. W.↗

NASA NTRS2000

SiC-Based Gas Sensor Development

Silicon carbide based Schottky diode gas sensors are being developed for applications such as emission measurements and leak detection. The effects of the geometry of the tin oxide film in a Pd/SnO2/SiC structure will be discussed as well as improvements in packaging SiC-based sensors. It is concluded that there is considerable versatility in the formation of SiC-based Schottky diode gas sensing structures which will potentially allow the fabrication of a SiC-based gas sensor array for a variety of gases and temperatures.

Hunter, G. W.↗

NASA NTRS1996

Comparison Testings between Two High-temperature Strain Measurement Systems

An experimental evaluation was conducted at NASA Lewis Research Center to compare and contrast the performance of a newly developed resistance strain gage, the PdCr temperature-compensated wire strain gage, to that of a conventional high-temperature extensometry. The evaluation of the two strain measurement systems was conducted through the application of various thermal and mechanical loading spectra using a high-temperature thermomechanical uniaxial testing system equipped with quartz lamp heating. The purpose of the testing was not only to compare and contrast the two strain sensors but also to investigate the applicability of the PdCr strain gage to the testing environment typically employed when characterizing the high-temperature mechanical behavior of structural materials. Strain measurement capabilities to 8OO C were investigated with a nickel base superalloy IN100 substrate material, and application to titanium matrix composite (TMC) materials was examined with the SCS-6/Ti-15-3 08 system. PdCr strain gages installed by three attachment techniques, namely, flame spraying, spot welding and rapid infrared joining were investigated.

Lei, J.-F.↗