NASA NTRS · 19950065452
Monolithic Active-Pixel Infrared Sensors
Abstract
Monolithic arrays of active-pixel junction field-effect (JFET) devices made from InGaAs proposed for use as imaging sensors sensitive to light in visible and short-wavelength infrared parts of electromagnetic spectrum. Each pixel of such array comprises photodetector monolithically integrated with JFET output-amplifier circuit of source-follower type - structure similar to charge-coupled device (CCD). Sizes of instruments reduced because large cooling systems not needed.
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Fossum, Eric R., Cunningham, Thomas J., Krabach, Timothy N., Staller, Craig O.. 1995-06-01. Monolithic Active-Pixel Infrared Sensors. https://ntrs.nasa.gov/citations/19950065452
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