Engineering topics

Krabach, Timothy N.

Publications and source records attributed to Krabach, Timothy N..

9 records

NASA NTRS1999

Detecting thermal discrepancies in vessel walls

An infrared, heat-sensing catheter particularly useful for identifying potentially fatal arterial plaques in patients with disease of the coronary or other arteries and its use are detailed. In one embodiment, an infrared fiberoptic system (with or without ultrasound) is employed at the tip of the catheter to locate inflamed, heat-producing, atherosclerotic plaque, which is at greater risk for rupture, fissure, or ulceration, and consequent thrombosis and occlusion of the artery. In another embodiment, a catheter with an infrared detector (with or without ultrasound) employed at its tip will likewise locate inflamed heat-producing atherosclerotic plaque. The devices and methods of the invention may be used to detect abscesses, infection, and cancerous regions by the heat such regions differentially display over the ambient temperature of immediately adjacent tissues. The methods and devices of the invention may also be used to detect regions of cooler than ambient tissue in a vessel or organ which indicate cell death, thrombosis, cell death, hemorrhage, calcium or cholesterol accumulations, or foreign materials.

Casscells, S. Ward↗

NASA NTRS1995

Monolithic Active-Pixel Infrared Sensors

Monolithic arrays of active-pixel junction field-effect (JFET) devices made from InGaAs proposed for use as imaging sensors sensitive to light in visible and short-wavelength infrared parts of electromagnetic spectrum. Each pixel of such array comprises photodetector monolithically integrated with JFET output-amplifier circuit of source-follower type - structure similar to charge-coupled device (CCD). Sizes of instruments reduced because large cooling systems not needed.

Fossum, Eric R.↗

NASA NTRS1995

Monolithic in-based III-V compound semiconductor focal plane array cell with single stage CCD output

A monolithic semiconductor imager includes an indium-based III-V compound semiconductor monolithic active layer of a first conductivity type, an array of plural focal plane cells on the active layer, each of the focal plane cells including a photogate over a top surface of the active layer, a readout circuit dedicated to the focal plane cell including plural transistors formed monolithically with the monolithic active layer and a single-stage charge coupled device formed monolithically with the active layer between the photogate and the readout circuit for transferring photo-generated charge accumulated beneath the photogate during an integration period to the readout circuit. The photogate includes thin epitaxial semiconductor layer of a second conductivity type overlying the active layer and an aperture electrode overlying a peripheral portion of the thin epitaxial semiconductor layer, the aperture electrode being connectable to a photogate bias voltage.

Fossum, Eric R.↗

NASA NTRS1994

(abstract) Pluto Integrated Camera-Spectrometer (PICS): a Low Mass, Low Power Instrument for Planetary Exploration

The concept we describe is an integrated instrument (a Pluto Integrated Camera-Spectrometer -- PICS) that will perform the functions of all three optical instruments required by the Pluto Fast Flyby Mission: the near-IR spectrometer, the camera, and the UV spectrometer. This integrated approach minimizes mass and power use. It also forced us early in the conceptual design to consider integrated observational sequences and integrated power management, thus ensuring compatible duty cycles (i.e., exposure times, readout rates) to meet the composite requirements for data collection, compression, and storage. Based on flight mission experience we believe that this integrated approach will result in substantial cost savings, both in reworking instrument designs during accommodation, as well as in sequence planning and integration. Finally, this integrated payload automatically yields a cohesive mission data set, optimized for correlative analysis. The presentation will provide details of the PICS instrument design and describe the fabrication and testing of the integrated SiC structure and optics at SSG Inc. Final integration and test plans for the prototype will also be described.

Pluto↗

NASA NTRS1994

Monolithic in-based III-V compound semiconductor focal plane array cell with single stage CCD output

Fossum, Eric R.↗

NASA NTRS1994

FPA Needs for NASA Missions

NASA has identified needs for a broad range of specialized, optimized infrared detectors and IR detector arrays to meet its future mission requirements. Space infrared missions will be conducted in a number of discipline areas, including astrophysics, earth and atmospheric science, planetary systems, and space physics. To allow investigators to meet scientific goals, specific technical requirements for infrared detectors have been developed. These challenging and often unique requirements include, for example, achieving background-limited performance in a cryogenic space telescope; developing long-wave IR arrays which achieve near background-limited performance at elevated (approximately 60 kelvin) operating temperatures; achieving IR arrays with large two-dimensional formats, excellent uniformity and linearity, and low power dissipation; demonstrating an imaging array technology for very long-wavelength (less than 100 microns) IR sensing, and IR devices with extremely low dark current levels; and demonstrating stable, low-noise, low-dissipation readouts. These requirements can in some cases be met by adaptation or extension of technologies originally developed by DoD. In other cases, the novel spectral range or other characteristics require unique solutions. Examples are given of recent scientific results which have been made possible with IR arrays. These serve as a preview of the kinds of science return which can be enabled by advanced IR focal plane technology from space platforms.

McCreight, Craig R.↗

NASA NTRS1993

Germanium blocked-impurity-band detector arrays - Unpassivated devices with bulk substrates

We have fabricated and characterized six-element monolithic arrays of Ge:Ga blocked-impurity-band detectors, with threshold wavelength 220 microns, peak quantum efficiency 14 percent, detective quantum efficiency 9 percent, dark current 300 e(-)/s, and response uniformity better than 4 percent. The devices are described very well by the standard model of blocked-impurity-band detectors and appear to satisfy many of the requirements of low-background astronomical instruments.

Watson, Dan M.↗

NASA NTRS1991

SiGe/Si heterojunction internal photoemission long-wavelength infrared detectors fabricated by molecular beam epitaxy

A new SiGe/Si heterojunction internal photoemission (HIP) long-wavelength infrared (LWIR) detector has been fabricated by molecular beam epitaxy (MBE). The detection mechanism of the SiGe/Si HIP detector is infrared absorption in the degenerately doped p+-SiGe layer followed by internal photoemission of photoexcited holes over a heterojunction barrier. By adjusting the Ge concentration in the SiGe layer, and, consequently, the valence band offset between SiGe and Si, the cutoff wavelength of SiGe HIP detectors can be extended into the LWIR (8-17-micron) regime. Detectors were fabricated by growing p+-SiGe layers using MBE on patterned p-type Si substrates. The SiGe layers were boron-doped, with concentrations ranging from 10 to the 19th/cu cm to 4 x 10 to the 20th/cu cm. Infrared absorption of 5-25 percent in a 30-nm-thick p+-SiGe layer was measured in the 3-20-micron range using a Fourier transform infrared spectrometer. Quantum efficiencies of 3-5 percent have been obtained from test devices in the 8-12-micron range.

Lin, True-Lon↗

NASA NTRS1989

Extrinsic germanium Blocked Impurity Bank (BIB) detectors

Ge:Ga blocked-impurity-band (BIB) detectors with long wavelength thresholds greater than 190 microns and peak quantum efficiencies of 4 percent, at an operating temperature of 1.8 K, have been fabricated. These proof of concept devices consist of a high purity germanium blocking layer epitaxially grown on a Ga-doped Ge substrate. This demonstration of BIB behavior in germanium enables the development of far infrared detector arrays similar to the current silicon-based devices. Present efforts are focussed on improving the chemical vapor deposition process used to create the blocking layer and on the lithographic processing required to produce monolithic detector arrays in germanium. Approaches to test the impurity levels in both the blocking and active layers are considered.

Krabach, Timothy N.↗