Faulty behavior of asynchronous storage elements

Abstract

It is often assumed that the faults in storage elements (SE's) can be modeled as output/input stuck-at-faults of the element. They are implicitly considered equivalent to the stuck-at faults in the combinational logic surrounding the SE cells. A more accurate higher level fault model for elementary SE's used in asynchronous circuits is presented. This model offers better representation of the physical failures. It is shown that the stuck-at model may be adequate if only modest fault coverage is desired. The enhanced model includes some common fault behaviors of SE's that are not covered by the stuck-at model. These include data-feed-through behaviors that cause the SE to be combinational. Fault models for complex SE cells can be obtained without a significant loss of information about the structure of the circuit.