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Malaiya, Yashwant K.

Publications and source records attributed to Malaiya, Yashwant K..

Bridging faults in BiCMOS circuits

Combining the advantages of CMOS and bipolar, BiCMOS is emerging as a major technology for many high performance digital and mixed signal applications. Recent investigations revealed that bridging faults can be a major failure mode in IC's. Effects of bridging faults in BiCMOS circuits are presented. Bridging faults between logical units without feedback and logical units with feedback are considered. Several bridging faults can be detected by monitoring the power supply current (I(sub DDQ) monitoring). Effects of bridging faults and bridging resistance on output logic levels were examined along with their effects on noise immunity.

Menon, Sankaran M.↗

Faulty behavior of asynchronous storage elements

It is often assumed that the faults in storage elements (SE's) can be modeled as output/input stuck-at-faults of the element. They are implicitly considered equivalent to the stuck-at faults in the combinational logic surrounding the SE cells. A more accurate higher level fault model for elementary SE's used in asynchronous circuits is presented. This model offers better representation of the physical failures. It is shown that the stuck-at model may be adequate if only modest fault coverage is desired. The enhanced model includes some common fault behaviors of SE's that are not covered by the stuck-at model. These include data-feed-through behaviors that cause the SE to be combinational. Fault models for complex SE cells can be obtained without a significant loss of information about the structure of the circuit.

Al-Assadi, Waleed K.↗

Detection of feed-through faults in CMOS storage elements

In testing sequential circuits, internal faults in the storage elements (SE's) are sometimes modeled as stuck-at faults in the combinational circuits surrounding the SE. The detection of some transistor-level faults that cannot be modeled as stuck-at are considered. These feed-through faults cause the cell to become either data-feed-through, which makes the cell combinational, or clock-feed-through, which causes the clock signal or its complement to appear at the output. Under such faults, the cell does not function as a memory element. Here it is shown that such faults may or may not be detected depending on delays involved. Conditions under which race-ahead occurs are identified.

Al-Assadi, Waleed K.↗

Behavior of faulty double BJT BiCMOS logic gates

Logic Behavior of a Double BJT BiCMOS device under transistor level shorts and opens is examined. In addition to delay faults, faults that cause the gate to exhibit sequential behavior were observed. Several faults can be detected only by monitoring the current. The faulty behavior of Bipolar (TTL) and CMOS logic families is compared with BiCMOS, to bring out the testability differences.

Menon, Sankaran M.↗