Novel heterojunction varactors

Abstract

An account is given of new varactor multiplier designs, for mm-wave and sub-mm-wave receiver systems, which have their bases in heterostructure layers and exhibit either stronger capacitance nonlinearity or a special symmetry of characteristics. While barrier-n-layer-n(+) C-V characteristics yield superior performance at low pump powers, the symmetric C-V characteristics of the single-barrier varactor devices yield efficient low-order harmonic generation. Capacitance nonlinearity in these devices is due to depletion of a semiconductor drift region.