NASA NTRS ยท 19840021025
High density circuit technology, part 1
Abstract
The metal (or dielectric) lift-off processes used in the semiconductor industry to fabricate high density very large scale integration (VLSI) systems were reviewed. The lift-off process consists of depositing the light-sensitive material onto the wafer and patterning first in such a manner as to form a stencil for the interconnection material. Then the interconnection layer is deposited and unwanted areas are lifted off by removing the underlying stencil. Several of these lift-off techniques were examined experimentally. The use of an auxiliary layer of polyimide to form a lift-off stencil offers considerable promise.
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Wade, T. E.. 1982-01-01. High density circuit technology, part 1. https://ntrs.nasa.gov/citations/19840021025
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