NASA NTRS · 19840021020
High density circuit technology, part 2
Abstract
A multilevel metal interconnection system for very large scale integration (VLSI) systems utilizing polyimides as the interlayer dielectric material is described. A complete characterization of polyimide materials is given as well as experimental methods accomplished using a double level metal test pattern. A low temperature, double exposure polyimide patterning procedure is also presented.
Keep this discovery
Explore connections, maps & timelines
Wade, T. E.. 1982-03-01. High density circuit technology, part 2. https://ntrs.nasa.gov/citations/19840021020
Cite the original work for its findings. Save a collection to share your selection of sources.