NASA NTRS · 19830012518
Controlled in situ etch-back
Abstract
A controlled in situ etch-back technique is disclosed in which an etch melt and a growth melt are first saturated by a source-seed crystal and thereafter etch-back of a substrate takes place by the slightly undersaturated etch melt, followed by LPE growth of a layer by the growth melt, which is slightly supersaturated.
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Mattauch, R. J., Seabaugh, A. C.. 1981-11-20. Controlled in situ etch-back. https://ntrs.nasa.gov/citations/19830012518
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