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Kirkpatrick, C. G.

Publications and source records attributed to Kirkpatrick, C. G..

8 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1984

LEC GaAs for integrated circuit applications

Recent developments in liquid encapsulated Czochralski techniques for the growth of semiinsulating GaAs for integrated circuit applications have resulted in significant improvements in the quality and quantity of GaAs material suitable for device processing. The emergence of high performance GaAs integrated circuit technologies has accelerated the demand for high quality, large diameter semiinsulating GaAs substrates. The new device technologies, including digital integrated circuits, monolithic microwave integrated circuits and charge coupled devices have largely adopted direct ion implantation for the formation of doped layers. Ion implantation lends itself to good uniformity and reproducibility, high yield and low cost; however, this technique also places stringent demands on the quality of the semiinsulating GaAs substrates. Although significant progress was made in developing a viable planar ion implantation technology, the variability and poor quality of GaAs substrates have hindered progress in process development.

Kirkpatrick, C. G.↗
NASA NTRS1983

High purity, low dislocation GaAs single crystals

Liquid encapsulated Czochralski crystal growth techniques for producing undoped, high resistivity, low dislocation material suitable for device applications is described. Technique development resulted in reduction of dislocation densities in 3 inch GaAs crystals. Control over the melt stoichiometry was determined to be of critical importance for the reduction of twinning and polycrystallinity during growth.

Chen, R. T.↗
NASA NTRS1982

Compensation mechanism in liquid encapsulated Czochralski GaAs Importance of melt stoichiometry

It is shown that the key to reproducible growth of undoped semi-insulating GaAs by the liquid encapsulated Czochralski (LEC) technique is the control over the melt stoichiometry. Twelve crystals were grown from stoichiometric and nonstoichiometric melts. The material was characterized by secondary ion mass spectrometry, localized vibrational mode far infrared spectroscopy, Hall-effect measurements, optical absorption, and photoluminescence. A quantitative model for the compensation mechanism in the semi-insulating material was developed based on these measurements. The free carrier concentration is controlled by the balance between EL2 deep donors and carbon acceptors; furthermore, the incorporation of EL2 is controlled by the melt stoichiometry, increasing as the As atom fraction in the melt increases. As a result, semi-insulating material can be grown only from melts above a critical As composition. The practical significance of these results is discussed in terms of achieving high yield and reproducibility in the crystal growth process.

Holmes, D. E.↗
NASA NTRS1982

High purity low dislocation GaAs single crystals

Recent advances in GaAs bulk crystal growth using the LEC (liquid encapsulated Czochralski) technique are described. The dependence of the background impurity concentration and the dislocation density distribution on the materials synthesis and growth conditions were investigated. Background impurity concentrations as low as 4 x 10 to the 15th power were observed in undoped LEC GaAs. The dislocation density in selected regions of individual ingots was very low, below the 3000 cm .3000/sq cm threshold. The average dislocation density over a large annular ring on the wafers fell below the 10000/sq cm level for 3 inch diameter ingots. The diameter control during the program advanced to a diameter variation along a 3 inch ingot less than 2 mm.

Chen, R. T.↗
NASA NTRS1982

Stoichiometry-controlled compensation in liquid encapsulated Czochralski GaAs

It is shown that the electrical compensation of undoped GaAs grown by the liquid encapsulated Czochralski technique is controlled by the melt stoichiometry. The concentration of the deep donor EL2 in the crystal depends on the As concentration in the melt, increasing from about 5 x 10 to the 15th per cu cm to 1.7 x 10 to the 16th per cu cm as the As atom fraction increases from 0.48 to 0.51. Furthermore, it is shown that the free-carrier concentration of semi-insulating GaAs is determined by the relative concentrations of EL2 and carbon acceptors. As a result, semi-insulating material can be obtained only above a critical As concentration (0.475-atom fraction in the material here) where the concentration of EL2 is sufficient to compensate residual acceptors. Below the critical As concentration the material is p type due to excess acceptors.

Holmes, D. E.↗
NASA NTRS1982

Advances in large-diameter liquid encapsulated Czochralski GaAs

The purity, crystalline perfection, and electrical properties of n- and p-type GaAs crystals grown by the liquid encapsulated Czochralski (LEC) technique are evaluated. The determination of the dislocation density, incidence of twinning, microstructure, background purity, mobility, and minority carrier diffusion length is included. The properties of the LEC GaAs crystals are generally comparable to, if not superior to those of small-diameter GaAs material grown by conventional bulk growth techniques. As a result, LEC GaAs is suitable for application to minority carrier devices requiring high-quality and large-area substrates.

Chen, R. T.↗
NASA NTRS1982

Liquid encapsulated Czochralski growth of low dislocation GaAs

The availability of high-quality, large-diameter GaAs substrates is key to the successful development and production of high-speed GaAs devices and high-efficiency GaAs solar cells. The liquid encapsulated Czochralski (LEC) technique has provided a means for producing large-diameter GaAs. Progress in improving the LEC growth process which has resulted in 3-inch GaAs crystals with exceptionally low dislocation densities and reduced propensity for twinning is reported. Undoped, semi-insulating GaAs ingots were grown in a Melbourn high-pressure LEC system. The effects of seed perfection, seed necking, cone angle, melt stoichiometry, ambient pressure, thickness of the B2O3 encapsulating layer, and diameter control on the dislocation density were investigated. The material was characterized by preferential etching and X-ray topography. It is shown that 3-inch diameter substrates can be produced with dislocation densities as low as 6000 per sq cm through proper selection and control of growth parameters. Also, the incidence of twinning can be reduced significantly by growing from slightly As-rich melts.

Kirkpatrick, C. G.↗