Engineering topics
Publications and source records attributed to Zook, J. D..
Polycrystalline silicon for solar cells produced at low cost. Molten silicon poured from quartz trough onto moving carbon-coated ceramic substrate. Doctor blade spreads liquid silicon evenly over substrate. Molten material solidifies to form sheet of polycrystalline silicon having photovoltaic conversion efficiency greater than 10 percent. Method produces 100-um-thick silicon coatings at speed 0.15 centimeter per second.
Silicon-growth technique, based on coating ceramic substrates with thin layer of molten silicon solidifies to form polycrystalline film, modified to produce solar-cell quality silicon sheet.
Controlled temperature profiles essential to production of solar cells. Studies of inverted meniscus process for depositing silicon coatings on ceramic substrates described in new report. When fully developed, processed used to manufacture low-cost solar photovoltaic cells.
Light-beam-induced currents yield information about solar cell material. Apparatus measures short-circuit current generated when spot of concentrated light is scanned across grains and grain boundaries in material under test. Technique used to evaluate SOC samples for diffusion and recombination effects of cell processing and chemical and structural defects.
The technical feasibility of producing solar-cell-quality sheet silicon to meet the Department of Energy (DOE) 1986 overall price goal of $0.70/watt was investigated. With the silicon-on-ceramic (SOC) approach, a low-cost ceramic substrate is coated with large-grain polycrystalline silicon by unidirectional solidification of molten silicon. This effort was divided into several areas of investigation in order to most efficiently meet the goals of the program. These areas include: (1) dip-coating; (2) continuous coating designated SCIM-coating, and acronym for Silicon Coating by an Inverted Meniscus (SCIM); (3) material characterization; (4) cell fabrication and evaluation; and (5) theoretical analysis. Both coating approaches were successful in producing thin layers of large grain, solar-cell-quality silicon. The dip-coating approach was initially investigated and considerable effort was given to this technique. The SCIM technique was adopted because of its scale-up potential and its capability to produce more conventiently large areas of SOC.
The technical feasibility of producing solar cell quality sheet silicon to meet the DOE 1986 cost goal of 70 cents/watt was investigated. The silicon on ceramic approach is to coat a low cost ceramic substrate with large grain polycrystalline silicon by unidirectional solidification of molten silicon. Results and accomplishments are summarized.
The silicon-on-ceramic (SOC) process produces thin layers of silicon on inexpensive ceramic substrates. The layers are produced by unidirectional solidification of molten silicon, and are polycrystalline. Solar cells made from SOC material have performed with a conversion efficiency of 10.5%. In connection with the objective to improve the efficiency of SOC solar cells, an investigation was conducted to assess the relative importance of grain boundaries and impurities. In order to separate the two effects, light-beam-induced current (LBIC) measurements of the short-circuit current were made using a micron-sized light beam from a monochromator. The LBIC measurements are closely related to solar cell performance since the technique identifies the various spatial and spectral contributions to solar cell current. On the basis of the obtained results, it appears that structural defects are more important than chemical defects in limiting the performance of present SOC solar cells.
The SCIM (Silicon-Coating-By-Inverted Meniscus) process to produce SOC (silicon-on-ceramic) substrates has been investigated for various growth conditions and substrate velocities (4-30 cm/min). Slotted mullite-based substrates (10-cm-wide by 100-cm-long) have been coated with smooth, continuous silicon layers, with thicknesses in the range from 100 to 300 microns. Thermal stress (which can be a problem at low velocities) is prevented by proper thermal design. The highest SCIM-coated SOC cell efficiencies to date are 7.5% (AM1, AR) as compared to 10.5% (AM1, AR) for dip-coated SOC cells. Substantial improvements in cell efficiency are expected when high purity parts are installed in the SCIM-coater.
In polycrystalline solar cells, the short-circuit current is reduced (compared to single-crystal cells) due to recombination of minority carriers at the grain boundaries. The magnitude of this reduction is calculated for the case of a monochromatic beam of light, assuming that both the light beam and the grain boundaries are perpendicular to a p-n junction. The photoresponse of the junction is calculated in terms of the absorption coefficient of the light, the minority-carrier diffusion length, the surface recombination velocity at the grain boundary and the distance of the light beam from the grain boundary. The analysis gives an expression for an effective grain boundary width which depends on wavelength. This width determines the reduction in short-circuit current of solar cells made from material with columnar-type grains.
Growth of sheet silicon on low-cost substrates has been demonstrated by the silicon coating with inverted meniscus (SCIM) technique. A mullite-based ceramic substrate is coated with carbon and then passed over a trough of molten silicon with a raised meniscus. Solidification occurs at the trailing edge of the downstream meniscus, producing a silicon-on-ceramic (SOC) layer. Meniscus shape and stability are controlled by varying the level of molten silicon in a reservoir connected to the trough. The thermal conditions for growth and the crystallographic texture of the SOC layers are similar to those produced by dip-coating, the original technique of meniscus-controlled growth. The thermal conditions for growth have been analyzed in some detail. The analysis correctly predicts the velocity-thickness relationship and the liquid-solid interface shape for dip-coating, and appears to be equally applicable to SCIM-coating. Solar cells made from dip-coated SOC material have demonstrated efficiencies of 10% on 4-sq cm cells and 9.9% on 10-sq cm cells.
A technique has been developed for coating low-cost mullite-based refractory substrates with thin layers of solar cell quality silicon. The technique involves first carbonizing one surface of the ceramic and then contacting it with molten silicon. The silicon wets the carbonized surface and, under the proper thermal conditions, solidifies as a large-grained sheet. Solar cells produced from this composite silicon-on-ceramic material have exhibited total area conversion efficiencies of ten percent.
The technical and economic feasibility of producing solar cell-quality silicon was investigated. This was done by coating one surface of carbonized ceramic substrates with a thin layer of large-grain polycrystalline silicon from the melt. Significant progress in the following areas was demonstrated: (1) fabricating a 10 sq cm cell having 9.9 percent conversion efficiency; (2) producing a 225 sq cm layer of sheet silicon; and (3) obtaining 100 microns thick coatings at pull speed of 0.15 cm/sec, although approximately 50 percent of the layer exhibited dendritic growth.
Significant progress is reported in fabricating a 4 sq cm cell having a 10.1 percent conversion efficiency and a 10 sq cm cell having a 9.2 percent conversion efficiency. The continuous (SCIM) coater succeeded in producing a 16 sq cm coating exhibiting unidirectional solidification and large grain size. A layer was grown at 0.2 cm/sec in the experimental coater which was partially dendritic but also contained a large smooth area approximately 100 micron m thick. The dark characteristic measurements of a typical SCC solar cell yield shunt resistance values of 10K ohms and series resistance values and 0.4 ohm. The production dip-coater is operating at over 50 percent yield in terms of good cell quality material. The most recent run yielded 13 good substrates out of 15.
The technical and economic feasibility of producing solar cell quality sheet silicon was investigated. It was hoped this could be done by coating one surface of carbonized ceramic substrates with a thin layer of large-grain polycrystalline silicon from the melt. Work was directed towards the solution of unique cell processing/design problems encountered with the silicon-ceramic (SOC) material due to its intimate contact with the ceramic substrate. Significant progress was demonstrated in the following areas; (1) the continuous coater succeeded in producing small-area coatings exhibiting unidirectional solidification and substatial grain size; (2) dip coater succeeded in producing thick (more than 500 micron) dendritic layers at coating speeds of 0.2-0.3 cm/sec; and (3) a standard for producing total area SOC solar cells using slotted ceramic substrates was developed.
The silicon-on-ceramic (SOC) process uses inexpensive ceramic substrates to provide supported growth of silicon from the melt. The conditions for unidirectional solidification, the grain structure and other properties are quite similar to those of EFG silicon ribbon. Solar cells with interdigital electrodes have demonstrated AMl conversion efficiencies (active area) of 7.8% without AR coatings and 10.1% efficiencies with an AR coating of SiO. Mathematical modeling of the series resistance of cells shows the feasibility of making electrical contact to the base layer of the cell through slots in the substrate. However, series resistance in the base layer sets an upper limit on slot spacing for efficient cell performance.
The objective of this research program is to investigate the technical and economic feasibility of producing solar-cell-quality sheet silicon by coating one surface of carbonized ceramic substrates with a thin layer of large-grain polycrystalline silicon from the melt. The past quarter demonstrated significant progress in several areas. Seeded growth of silicon-on-ceramic (SOC) with an EFG ribbon seed was demonstrated. Different types of mullite were successfully coated with silicon. A new method of deriving minority carrier diffusion length, L sub n from spectral response measurements was evaluated. ECOMOD cost projections were found to be in good agreement with the interim SAMIS method proposed by JPL. On the less positive side, there was a decrease in cell performance which we believe to be due to an unidentified source of impurities.
The technical and economic feasibility of producing solar-cell-quality sheet silicon was investigated. The sheets were made by coating one surface of carbonized ceramic substrates with a thin layer of large-grain polycrystalline silicon from the melt. Significant progress was made in all areas of the program.
The technical and economic feasibility of producing solar cell quality sheet silicon by dip-coating one surface of carbonized ceramic substrates with a thin layer of large grain polycrystalline silicon was investigated. The dip-coating methods studied were directed toward a minimum cost process with the ultimate objective of producing solar cells with a conversion efficiency of 10% or greater. The technique shows excellent promise for low cost, labor-saving, scale-up potentialities and would provide an end product of sheet silicon with a rigid and strong supportive backing. An experimental dip-coating facility was designed and constructed, several substrates were successfully dip-coated with areas as large as 25 sq cm and thicknesses of 12 micron to 250 micron. There appears to be no serious limitation on the area of a substrate that could be coated. Of the various substrate materials dip-coated, mullite appears to best satisfy the requirement of the program. An inexpensive process was developed for producing mullite in the desired geometry.