NASA NTRS · 19820000349
CLEFT Process for GaAs Solar Cells
Abstract
CLEFT (cleavage of lateral epitaxial films for transfer) process involves growing ultrathin gallium arsenide (GaAs solar cell on much thicker layer of same material). Growth method is completed solar cell easily separated by cleaving from much thicker substrate. Thick substrate is reusable in making additional cells, which reduces cell material cost.
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Fan, J. C. C., Bozler, C. O., Mcclelland, R. W.. 1983-05-01. CLEFT Process for GaAs Solar Cells. https://ntrs.nasa.gov/citations/19820000349
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