Engineering topics

Mcclelland, R. W.

Publications and source records attributed to Mcclelland, R. W..

7 records

NASA NTRS1991

GaAs (AlGaAs)/CuInSe2 tandem solar cells. Technology status and future directions

Mechanically stacked, high efficiency, lightweight, and radiation resistant photovoltaic cells based on a GaAs thin film top and CuInSe2 thin film bottom cells were developed, and are considered one of the most promising devices for planar solar array applications. The highest efficiency demonstrated so far using the 4 sq cm design is 23.1 pct. AM0, one sun efficiency when measured in four-terminal configuration. The current status of the GaAs(AlGaAs)/CuInSe2 tandem cell program is presented and future directions that will lead to cell efficiencies higher than 26 pct. Air Mass Zero (AM0). A new 8 sq cm cell design developed for a two terminal and voltage matched configuration to minimize wiring complexity is discussed. Optimization of the GaAs structure for a higher end-of-life performance and further improvement of tandem cells by utilizing AlGaAs as an top absorber are described. Results of environmental tests conducted with these thin film GaAs/CuInSe2 tandem cells are also summarized.

Kim, N. P.↗

NASA NTRS1991

Progress in GaAs/CuInSe2 tandem junction solar cells

Much more power is required for spacecraft of the future than current vehicles. To meet this increased demand for power while simultaneously meeting other requirements for launch, deployment, and maneuverability, the development of higher-efficiency, lighter-weight, and more radiation resistant photovoltaic cells is essential. Mechanically stacked tandem junction solar cells based on (AlGaAs)GaAs thin film CLEFT (Cleavage of Lateral Epitaxial Film for Transfer) top cells and CuInSe2(CIS) thin film bottom cells are being developed to meet these power needs. The mechanically stacked tandem configuration is chosen due to its interconnect flexibility allowing more efficient array level performance. It also eliminates cell fabrication processing constraints associated with monolithically integrated multi-junction approaches, thus producing higher cell fabrication yields. The GaAs cell is used as the top cell due to its demonstrated high efficiency, and good radiation resistance. Furthermore, it offers a future potential for bandgap tuning using AlGaAs as the absorber to maximize cell performance. The CuInSe2 cell is used as the bottom cell due to superb radiation resistance, stability, and optimal bandgap value in combination with an AlGaAs top cell. Since both cells are incorporated as thin films, this approach provides a potential for very high specific power. This high specific power (W/kg), combined with high power density (W/sq m) resulting from the high efficiency of this approach, makes these cells ideally suited for various space applications.

Kim, N. P.↗

NASA NTRS1990

23.5 percent thin-film space concentrator cells

Thin-film AlGaAs-GaAs double-heterostructure concentrator cells were fabricated which exhibit total-area conversion efficiencies as high as 23.5 percent AM0 at 100 suns, 25 C. This is one of the best space concentrators measured to date at NASA and is designed for a thin-film cell without a prismatic coverglass. This solar cell structure consists of a GaAs/AlGaAs film less than 5 micron thick mounted to a glass cover/superstrate, with coplanar back-side contacts. The coverglass is not prismatic. The CLEFT process, a method for mechanically separating epitaxial layers from their substrate, is used to process these cells into thin films. The advantages of single-crystal GaAs are thereby retained, while reducing weight and cutting cost by allowing for substrate reuse. Thin-film cells also have better thermal management capabilities and can be stacked for use in tandem structures. Cell fabrication and performance are described, and directions for further improvements are identified.

Dingle, B. D.↗

NASA NTRS1987

GaAs/AlGaAs heterostructure point-contact concentrator cells

Point-contact cells fabricated in silicon have recently achieved very high efficiencies. Applying this structure to GaAs is difficult as it requires both surface passivation of the GaAs and a film of GaAs with thickness less than 10 microns. The authors propose to overcome these difficulties by (1) using AlGaAs layers grown by OMCVD to act as front- and back-surface fields in order to confine the photogenerated minority carriers away from the surfaces, and (2) using the CLEFT technology to produce thin, separated films of this structure. It has been found that much of the necessary technologies have been developed and that the primary problem remaining to be solved is localized junction formation.

Gale, R. P.↗

NASA NTRS1984

GaAs CLEFT solar cells for space applications

Although GaAs solar cells are radiation-resistant and have high conversion efficiencies, there are two major obstacles that such cells must overcome before they can be widely adopted for space applications: GaAs wafers are too expensive and cells made from these wafers are too heavy. The CLEFT process permits the growth of thin single-crystal films on reusable substrates, resulting in a drastic reduction in both cell cost and cell weight. Recent advances in CLEFT technology have made it possible to achieve efficiencies of about 14 percent AM0 for 0.51-sq cm GaAs solar cells 5 microns thick with a 41-mil-thick coverglass. In preliminary experiments efficiencies close to 19 percent AM1 have been obtained for 10-micron-thick cells. It is suggested that the CLEFT technology should yield inexpensive, highly efficient modules with a beginning-of-life specific power close to 1 kW/kg (for a coverglass thickness of 4 mils).

Fan, J. C. C.↗

NASA NTRS1983

CLEFT Process for GaAs Solar Cells

CLEFT (cleavage of lateral epitaxial films for transfer) process involves growing ultrathin gallium arsenide (GaAs solar cell on much thicker layer of same material). Growth method is completed solar cell easily separated by cleaving from much thicker substrate. Thick substrate is reusable in making additional cells, which reduces cell material cost.

Fan, J. C. C.↗

NASA NTRS1982

Lateral epitaxial overgowth of GaAs by organometallic chemical vapor deposition

Lateral epitaxial overgrowth of GaAs by organometallic chemical vapor deposition has been demonstrated. Pyrolytic decomposition of trimethylgallium and arsine, without the use of HCl, was used to deposit GaAs on substrates prepared by coating (110) GaAs wafers with SiO2, then using photolithography to open narrow stripes in the oxide. Lateral overgrowth was seeded by epitaxial deposits formed on the GaAs surfaces exposed by the stripe openings. The extent of lateral overgrowth was investigated as a function of stripe orientation and growth temperature. Ratios of lateral to vertical growth rates greater than five have been obtained. The lateral growth is due to surface-kinetic control for the two-dimensional growth geometry studied. A continuous epitaxial GaAs layer 3 microns thick has been grown over a patterned mask on a GaAs substrate and then cleaved from the substrate.

Gale, R. P.↗