NASA NTRS · 19790053674
LaF3 insulators for MIS structures
Abstract
Thin films of LaF3 deposited on Si or GaAs substrates have been observed to form blocking contacts with very high capacitances. This results in comparatively hysteresis-free and sharp C-V (capacitance-voltage) characteristics for MIS structures. Such structures have been used to study the interface states of GaAs with increased resolution and to construct improved photocapacitive infrared detectors.
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Sher, A., Tsuo, Y. H., Moriarty, J. A., Miller, W. E., Crouch, R. K., Seiber, B. A.. 1979-06-01. LaF3 insulators for MIS structures. https://ntrs.nasa.gov/citations/19790053674
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