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Li, S. P.

Publications and source records attributed to Li, S. P..

17 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2015

X-ray magnetic circular dichroism study of epitaxial magnetite ultrathin film on MgO(100)

The spin and orbital magnetic moments of the Fe{sub 3}O{sub 4} epitaxial ultrathin film synthesized by plasma assisted simultaneous oxidization on MgO(100) have been studied with X-ray magnetic circular dichroism. The ultrathin film retains a rather large total magnetic moment, i.e., (2.73 ± 0.15) μ{sub B}/f.u., which is ∼70% of that for the bulk-like Fe{sub 3}O{sub 4}. A significant unquenched orbital moment up to 0.54 ± 0.05 μ{sub B}/f.u. was observed, which could come from the symmetry breaking at the Fe{sub 3}O{sub 4}/MgO interface. Such sizable orbital moment will add capacities to the Fe{sub 3}O{sub 4}-based spintronics devices in the magnetization reversal by the electric field.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Spin and orbital moments of nanoscale Fe{sub 3}O{sub 4} epitaxial thin film on MgO/GaAs(100)

Nanoscale Fe{sub 3}O{sub 4} epitaxial thin film has been synthesized on MgO/GaAs(100) spintronic heterostructure, and studied with X-ray magnetic circular dichroism. We have observed a total magnetic moment (m{sub l+s}) of (3.32 ± 0.1)μ{sub B}/f.u., retaining 83% of the bulk value. Unquenched orbital moment (m{sub l}) of (0.47 ± 0.05)μ{sub B}/f.u. has been confirmed by carefully applying the sum rule. The results offer direct experimental evidence of the bulk-like total magnetic moment and a large orbital moment in the nanoscale fully epitaxial Fe{sub 3}O{sub 4}/MgO/GaAs(100) heterostructure, which is significant for spintronics applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS1982

Improved Model for MOS Breakdown

With an improved model, accelerated high-field tests can be used to predict gate-oxide breakdown in metal-oxide-semi-conductor (MOS) structures. Principal mechanism in MOS breakdown is mobile-ion emission from metal/oxide interface, which occurs during application of positive gate-bias field. Breakdown is related to clustering of emitted ions at localized defect sites in oxide/silicon interface. Using new model to interpret data, tests that normally take several weeks at low fields to accumulate sufficient statistics can be completed in only a few hours at high fields.

Li, S. P.↗
NASA NTRS1981

Improving MOS minority-carrier lifetime

Fluorine implantation increases minority-carrier lifetime in silicon by factor of 100, enhancing power efficiency in MOS applications. Implantation does not increase microdefects at silicon surface when thin oxide layers are grown, and process gathers existing impurities near surface without adversely affecting MOS electrical parameters. With these advantages, fluorine may be left on wafer surfaces after processing.

Cockrum, R. H.↗
NASA NTRS1979

Prediction of field-time-dependent gate-oxide breakdown in MOS devices

The model for field-time-dependent breakdown in the gate oxide of MOS devices is extended and verified with experimental data. The model permits accelerated tests at high fields which can be used to predict gate-oxide breakdowns at much longer times at normal operating fields.

Li, S. P.↗
NASA NTRS1978

Induced junction solar cell and method of fabrication

An induced junction solar cell is fabricated on a p-type silicon substrate by first diffusing a grid of criss-crossed current collecting n+ stripes and thermally growing a thin SiO2 film, and then, using silicon-rich chemical vapor deposition (CVD), producing a layer of SiO2 having inherent defects, such as silicon interstices, which function as deep traps for spontaneous positive charges. Ion implantation increases the stable positive charge distribution for a greater inversion layer in the p-type silicon near the surface. After etching through the oxide to parallel collecting stripes, a pattern of metal is produced consisting of a set of contact stripes over the exposed collecting stripes and a diamond shaped pattern which functions as a current collection bus. Then the reverse side is metallized.

Maserjian, J.↗
NASA NTRS1978

Model for MOS field-time-dependent breakdown

A quantitative model for MOS breakdown is derived and correlated with experiments. The data were obtained by enhancing the effect of ion emission on breakdown through controlled ion-implantation damage prior to gate oxidation in an otherwise normal and clean MOS process

Li, S. P.↗
NASA NTRS1977

The effect of oxidation-expanded defects upon MOS parameters

Implantation of Ne ions was chosen as a means of introducing a uniformly distributed quantitatively controllable and reproducible amount of microdefects at the silicon surface. Each wafer was ion-implanted on one half of its surface, the other half remaining as a control. Seven implant fluences from 1 trillion to 5 by 10 to the 14th power Ne ions/sq cm were used. The fluences, as well as the concentrations of defects expanded by the subsequent gate oxidation, were correlated with seven different MOS parameters. For implant fluences of 10 to the 14th power per sq cm and above, increasing stacking-fault densities were found. The oxide defect density associated with time-dependent breakdown increased significantly with Ne dose. The presence of oxidation-expanded defects drastically increases the surface-generation velocity and decreases the bulk lifetime. Slight increases in flatband voltage and surface-state density occurred only for the wafers having the greatest defect concentrations. Oxidation of a P-containing damaged silicon surface results in a greater pileup of P at the surface than occurs for the oxidation of a similar but undamaged surface. It appears that the expanding defects restrain the diffusion of P inward from the surface.

Prussin, S.↗
NASA NTRS1977

Record dielectric breakdown automatically

Automatic Monitoring System for time-dependent dielectric breakdown tests ninety-nine metal-oxide semiconductor capacitors simultaneously. Each breakdown generates voltage spike registered on readouts and indicated by LED. Latching circuit prevents recording of possible subsequent breakdowns in same capacitor. In addition to research use, system could also be adapted for quality control.

Bates, E. T., Jr.↗
NASA NTRS1977

Fast measurement of MOS capacitors

Method allows flatband voltage measurement of capacitors to be taken quickly and precisely while capacitor is subject to desired conditions.

Bates, E. T., Jr.↗
NASA NTRS1976

Effective defect density for MOS breakdown - Dependence on oxide thickness

A new procedure for measuring effective defect density takes time-dependent primary dielectric breakdown in MOS devices into account. A time-varying breakdown probability is obtained by applying a constant field stress to a statistically sufficient number of MOS capacitors. Effective defects are assumed distributed randomly in two dimensions, hence indistinguishable. The effective defect density is found to vary with oxide thickness; tentative explanations are ventured to account for this (interfacial tensile stress, ion patching enhanced by local trapping, breakdown in the form of filamentary discharges with release of stored electrostatic energy).

Li, S. P.↗
NASA NTRS1976

Rapid and precise measurement of flatband voltage

The paper outlines the design, principles of operation, and calibration of a five-IC network intended to give a rapid, precise, and automatic determination of the flatband voltage of MOS capacitors. The basic principle of measurement is to compare the analog output voltage of a capacitance meter - which is directly proportional to the capacitance being measured - with a preset or dialed-in voltage proportional to the calculated flatband capacitance by means of a comparator circuit. The bias to the MOS capacitor supplied through the capacitance meter is provided by a ramp voltage going from a negative toward a positive voltage level and vice versa. The network employs two monostable multivibrators for reading and recording the flatband voltage and for resetting the initial conditions and restarting the ramp. The flatband voltage can be held and read on a digital voltmeter.

Li, S. P.↗
NASA NTRS1976

Time-dependent MOS breakdown

A general model for time-dependent breakdown in metal-oxide-silicon (MOS) structures is developed and related to experimental measurements on samples deliberately contaminated with Na. A statistical method is used for measuring the breakdown probability as a function of log time and applied field. It is shown that three time regions of breakdown can be explained respectively in terms of silicon surface defects, ion emission from the metal interface, and lateral ion diffusion at the silicon interface.

Li, S. P.↗
NASA NTRS1975

Ion-implantation effect on time-dependent breakdown in SiO2

It was experimentally demonstrated that the field emission of positive ions from the metal SiO2 interface in MOS structures can be controlled by introducing a positive charge in a small ion-implantation dose to a shallow depth below the metal electrode. Considerable improvement of time-dependent breakdown was noted in structures implanted in this manner as opposed to nonimplanted ones. This experiment confirms the model proposed by Li and Maserjian (1975) for radiation effect on time-dependent breakdown.

Li, S. P.↗
NASA NTRS1975

Electron radiation effects on time-dependent dielectric breakdown in SiO2 films

An experiment testing the effect of ionizing radiation on breakdown characteristics of SiO2 films is presented. Silicon wafers were oxidized and metallized, and a capacitor array was etched into a control sample while the rest were first irradiated with 1 MeV electrons and then etched. Time-dependent dielectric tests were made on all the capacitors, and the average characteristics of 96 capacitors are illustrated graphically. The curves are consistent with the model of holes trapped in the SiO2 film during irradiation leading to a retarding field for positive ion emission and drift toward the interface. It is shown how an externally applied field is reduced by the trapped charge, and that changes in the dielectric breakdown properties of the SiO2 film after irradiation depend on the positive trapped charge near the metal interface.

Li, S. P.↗
NASA NTRS1974

A measurement technique of time-dependent dielectric breakdown in MOS capacitors

The statistical nature of time-dependent dielectric breakdown characteristics in MOS capacitors was evidenced by testing large numbers of capacitors fabricated on single wafers. A multipoint probe and automatic electronic visual display technique are introduced that will yield statistical results which are necessary for the investigation of temperature, electric field, thermal annealing, and radiation effects in the breakdown characteristics, and an interpretation of the physical mechanisms involved. It is shown that capacitors of area greater than 0.002 sq cm may yield worst-case results, and that a multipoint probe of capacitors of smaller sizes can be used to obtain a profile of nonuniformities in the SiO2 films.

Li, S. P.↗