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Schlegel, E. S.

Publications and source records attributed to Schlegel, E. S..

At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1978

Gate-assisted turn-off thyristor

1,000-volt, 200-ampere gate-assisted turn-off thyristor has been developed for power circuits requiring high efficiency, small size, and low weight. Design features include shunted cathode for high dV/dt capability. Cathode in interdigitated with dynamic gate for fast, low-loss switching. Operating frequency exceeds 20 kHz with overall energy dissipation of less that 12 mJ per pulse for typical 20-microsecond half-sine waveform. Device has turn-on time of 2 microseconds and turn-off time as short as 3 microseconds with only 2 amperes of gate drive.

Lowry, L. R.↗
NASA NTRS1977

Development of a 1000V, 200A, low-loss, fast-switching, gate-assisted turn-off thyristor

The results of a program to develop a fast high power thyristor that can operate in switching circuits at frequencies of 10 to 20 kHz with very low power loss are given. Feasibility was demonstrated for a thyristor that blocks 1000V forward and reverse, conducts 200A, turns on in little more than 2 more microseconds with only 2A of gate drive, turns off in 3 microseconds with 2A of gate assist current and has an energy dissipation of only 12 mJ per pulse for a 20 microsecond half sine wave 200A pulse. Data were generated that clearly showed the tradeoffs that can be made between the turn off time and forward drop. The understanding of this relationship is necessary in the selection of deliverable thyristors with turn off times up to 7 microseconds to give improved efficiency in a series resonant dc to dc inverter application.

Schlegel, E. S.↗
NASA NTRS1976

Gate-assisted turnoff thyristors

A study of the turnoff physics in gate-assisted turnoff thyristors (GATT's) leads to a proposed mechanism involving the gate bias acting to prevent a forward voltage from appearing on the cathode rather than, as was previously thought, to sweep out excess carriers. It is shown that cathode shunting can be used in GATT's to virtually eliminate an important failure mode and to decrease the gate voltage needed to produce the desired improvement in turnoff time. Implications for designing GATT's are given, one being that a change in the lateral resistance of the p-base will have opposite effects depending on whether the cathode is shunted or not.

Schlegel, E. S.↗
NASA NTRS1976

A technique for optimizing the design of power semiconductor devices

A technique is described that provides a basis for predicting whether any device design change will improve or degrade the unavoidable trade-off that must be made between the conduction loss and the turn-off speed of fast-switching high-power thyristors. The technique makes use of a previously reported method by which, for a given design, this trade-off was determined for a wide range of carrier lifetimes. It is shown that by extending this technique, one can predict how other design variables affect this trade-off. The results show that for relatively slow devices the design can be changed to decrease the current gains to improve the turn-off time without significantly degrading the losses. On the other hand, for devices having fast turn-off times design changes can be made to increase the current gain to decrease the losses without a proportionate increase in the turn-off time. Physical explanations for these results are proposed.

Schlegel, E. S.↗
NASA NTRS1976

Gate assisted turn-off thyristor with cathode shunts and dynamic gate

A 1,000-V, 200-A gate-assisted turn-off thyristor (GATT) is described, whose design features include an interdigitated shunted cathode, a dynamic gate, a means for optimizing the carrier lifetime level, and a bypass diode. The device physics of gate-assisted turn-off are reviewed. Based on this, improvements in the design are described. It is shown that a prime failure mode can be eliminated and that the gate-assist signal voltage can be substantially decreased by employing a shunted cathode emitter. The test data show excellent turn-on characteristics due to the dynamic gate and the long perimeter of the edge of the main cathode. Turn-off times as short as 3 microsec are obtained. The combination of controlling the carrier lifetime with a precisely controlled and easily variable irradiation dose of high energy electrons with gate assist current provides for simple, precision tailoring of the device characteristics to the intended application.

Schlegel, E. S.↗
NASA NTRS1975

Development of a 1000V, 200A, low-loss, fast-switching, gate-assisted turn-off thyristor

Feasibility was demonstrated for a thyristor that blocks 1000V forward and reverse, conducts 200A, and turns on in little more than 2 microsec with only 2A of gate drive. Its features include a turn-off time of 3 microsec achieved with 2A of gate assist current of a few microseconds duration and an energy dissipation of only 12 mJ per pulse for a 20 microsec half sine wave, 200A pulse. Extensive theoretical and experimental study of the electrical behavior of thyristors having a fast turn-off time have significantly improved the understanding of the physics of turning thyristor off. Thyristors of two new designs were fabricated and evaluated. The high speed and low power were achieved by a combination of gate amplification, cathode shunting, and gate-assisted turn-off. Two techniques for making this combination practical are described.

Schlegel, E. S.↗