Engineering topics
Publications and source records attributed to Jamba, D. M..
Description of methods for generating desired Be and Mg ions and producing the electrical properties of p-type layers by implanting these ions in GaAs substrates. It is shown that the p-type layers thus produced have large hole concentrations and mobilities.
Discussion of two new techniques used to measure the lattice damage produced in GaAs by the implantation of 60 keV cadmium ions. In the first method, optical reflection spectra of the ion-implanted samples were measured in the wavelength range from 2000 to 4600 A. The decrease in reflectivity resulting from ion-implantation was used to determine the relative amount of lattice damage as a function of ion dose. The second technique employed the scanning electron microscope. Patterns very similar in appearance to Kikuchi electron diffraction patterns are obtained when the secondary and/or backscattered electron intensity is displayed as a function of the angle of incidence of the electron beam on a single crystal surface. The results of measurements made by both methods are compared with each other and with data obtained by the method of measuring lattice damage by Rutherford scattering of 1 MeV helium ions.
Cesium ion emission patterns from rear-fed porous refractory metals studied by thermal emission microscope
Cesium ion emission patterns obtained from rear- fed porous refractory metals, using thermal emission microscope
Residual gas effect on work function vs critical temperature for surface ionization of cesium on porous tungsten
Influence of residual gas atmosphere in space chambers on neutral efflux and critical temperature of tungsten ionizers