Development of a microelectronic module Final report
Feasibility of operating gallium arsenide devices in high temperature microelectronic circuits
Doerbeck, F.↗
Engineering topics
Mehal, E.
Publications and source records attributed to Mehal, E..
Development of a microelectronic module Interim scientific report, 1 Apr. 1967 - 31 Mar. 1968
Gallium arsenide n-p-n transistors using different crystal materials and fabrication technologies
Doerbeck, F.↗