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Zhou, Fei

Publications and source records attributed to Zhou, Fei.

50 records · Page 3
All sourcesNASA NTRSDOE OSTI
DOE OSTI2014

Photoluminescence performance of thulium doped Li{sub 4}SrCa(SiO{sub 4}){sub 2} under irradiation of ultraviolet and vacuum ultraviolet lights

Highlights: • A novel blue-emitting phosphor Li{sub 4}SrCa(SiO{sub 4}){sub 2}:Tm{sup 3+} was reported. • Li{sub 4}SrCa(SiO{sub 4}){sub 2}:Tm{sup 3+} exhibited excellent thermal and irradiation stability. • Li{sub 4}SrCa(SiO{sub 4}){sub 2}:Tm{sup 3+} was found to possess high color purity. - Abstract: In this work, we synthesized Tm{sup 3+} doped Li{sub 4}SrCa(SiO{sub 4}){sub 2} phosphors and investigated their photoluminescence properties under the excitation of ultraviolet and vacuum ultraviolet lights. The crystal structure analysis and variation of cell parameters confirm that Tm{sup 3+} ions have been successfully doped in the structure of Li{sub 4}SrCa(SiO{sub 4}){sub 2} host by occupying the sites of Ca{sup 2+} with the coordination number of 6. The luminescence results suggest that Li{sub 4}SrCa(SiO{sub 4}){sub 2}:Tm{sup 3+} is a good blue-emitting phosphor when excited by ultraviolet and vacuum ultraviolet irradiations. In addition, it is observed that there is nearly no degradation for Li{sub 4}SrCa(SiO{sub 4}){sub 2}:Tm{sup 3+} after undergoing thermal and irradiation treatments. Possible mechanisms for the luminescence processes are proposed on the basis of the discussion of excitation and emission spectra. In particular, the emission color of Li{sub 4}SrCa(SiO{sub 4}){sub 2}:Tm{sup 3+} by excitation of 147 and 172 nm irradiations is very close to the standard blue color, suggesting that it could be potentially applied in plasma display panels and mercury-free fluorescence lamps.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Lattice Anharmonicity and Thermal Conductivity from Compressive Sensing of First-Principles Calculations

First-principles prediction of lattice thermal conductivity K L of strongly anharmonic crystals is a long-standing challenge in solid state physics. Using recent advances in information science, we propose a systematic and rigorous approach to this problem, compressive sensing lattice dynamics (CSLD). Compressive sensing is used to select the physically important terms in the lattice dynamics model and determine their values in one shot. Non-intuitively, high accuracy is achieved when the model is trained on first-principles forces in quasi-random atomic configurations. The method is demonstrated for Si, NaCl, and Cu 12 Sb 4 S 13 , an earth-abundant thermoelectric with strong phononphonon interactions that limit the room-temperature K L to values near the amorphous limit.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Intrinsic SiO{sub x}-based unipolar resistive switching memory. II. Thermal effects on charge transport and characterization of multilevel programing

Multilevel programing and charge transport characteristics of intrinsic SiO{sub x}-based resistive switching memory are investigated using TaN/SiO{sub x}/n{sup ++}Si (MIS) and TiW/SiO{sub x}/TiW (MIM) device structures. Current transport characteristics of high- and low-resistance states (HRS and LRS) are studied in both device structures during multilevel operation. Analysis of device thermal response demonstrates that the effective electron energy barrier is strongly dependent on the resistance of the programed state, with estimates of 0.1 eV in the LRS and 0.6 eV in the HRS. Linear data fitting and conductance analyses indicate Poole-Frenkel emission or hopping conductance in the low-voltage region, whereas Fowler-Nordheim (F-N) or trap-assisted tunneling (TAT) is indicated at moderate voltage. Characterizations using hopping transport lead to hopping distance estimates of ∼1 nm in the LRS for both device structures. Relative permittivity values (ε{sub r}) were extracted using the Poole-Frenkel formulism and estimates of local filament temperature, where ε{sub r} values were ∼80 in the LRS and ∼4 in the HRS, suggesting a strongly polarized medium in the LRS. The onset of F-N tunneling or TAT corresponds to an observed “overshoot” in the I-V response with an estimated threshold of 1.6 ± 0.2 V, in good agreement with reported electro-luminescence results for LRS devices. Resistive switching is discussed in terms of electrochemical reactions between common SiO{sub 2} defects, and specific defect energy levels are assigned to the dominant transitions in the I-V response. The overshoot response in the LRS is consistent with TAT through either the Eγ' oxygen vacancy or the hydrogen bridge defect, both of which are reported to have an effective bandgap of 1.7 eV. The SET threshold at ∼2.5 V is modeled as hydrogen release from the (Si-H){sub 2} defect to generate the hydrogen bridge, and the RESET transition is modeled as an electrochemical reaction that re-forms (SiH){sub 2}. The results provide further insights into charge transport and help identify potential switching mechanisms in SiO{sub x}-based unipolar resistive switching memory.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2013

Bose gases near resonance: Renormalized interactions in a condensate

Bose gases at large scattering lengths or beyond the usual dilute limit for a long time have been one of the most challenging problems in many-body physics. In this article, we investigate the fundamental properties of a near-resonance Bose gas and illustrate that three-dimensional Bose gases become nearly fermionized near resonance when the chemical potential as a function of scattering lengths reaches a maximum and the atomic condensates lose metastability. The instability and accompanying maximum are shown to be a precursor of the sign change of g{sub 2}, the renormalized two-body interaction between condensed atoms. g{sub 2} changes from effectively repulsive to attractive when approaching resonance from the molecular side, even though the scattering length is still positive. This occurs when dimers, under the influence of condensates, emerge at zero energy in the atomic gases at a finite positive scattering length. We carry out our studies of Bose gases via applying a self-consistent renormalization group equation which is further subject to a boundary condition. We also comment on the relation between the approach here and the diagrammatic calculation in an early article [D. Borzov, M.S. Mashayekhi, S. Zhang, J.-L. Song, F. Zhou, Phys. Rev. A 85 (2012) 023620]. - Highlights: Black-Right-Pointing-Pointer A Bose gas becomes nearly fermionized when its chemical potential approaches a maximum near resonance. Black-Right-Pointing-Pointer At the maximum, an onset instability sets in at a positive scattering length. Black-Right-Pointing-Pointer Condensates strongly influence the renormalization flow of few-body running coupling constants. Black-Right-Pointing-Pointer The effective two-body interaction constant changes its sign at a positive scattering length.

74 ATOMIC AND MOLECULAR PHYSICS↗