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Zhou, Fei

Publications and source records attributed to Zhou, Fei.

At least 37 records · Page 2
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DOE OSTI2019

Tribological Properties of Cr(Si)CN Coatings Sliding Against Different Mating Balls in Water

Chromium carbon nitride coatings have potential industrial applications in aqueous environments due to their good tribological properties and corrosion resistance. In order to reveal the effect of silicon doping on the tribological properties of CrCN coating, the tribological properties of Cr(Si)CN coatings sliding against potential sliding partners (Si{sub 3}N{sub 4}, Al{sub 2}O{sub 3} and SUS440C balls) in water were discussed. The results showed that the coefficient of friction (COF) for different partners could be arranged as μ{sub Al2O3} < μ{sub Si3N4} < μ{sub SUS440C} regardless of coatings. This result was determined by the tribochemical reaction, oxidation resistance and contact pressures of tribopairs. After the incorporation of Si element, the friction behavior of CrCN coating was improved due to the friction-induced hydration of amorphous silicon compound phase as sliding against Si{sub 3}N{sub 4} and SUS440C balls.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Structure and Tribological Properties of CrTiAlCN Coatings with Various Carbon Contents

Multi-component CrTiAlCN coatings with different carbon contents were deposited on AISI M2 high-speed steels using unbalanced magnetron sputtering via adjusting the C{sub 2}H{sub 2} flow rates, and their microstructures and mechanical properties were characterized by using SEM, EDS, XRD, Vickers hardness tester and scratch tester, respectively. The tribological properties of CrTiAlCN coatings sliding against SUS440C high carbon martensitic balls were performed using ball-on-disk tribo-tester. The results showed that CrTiAlCN coatings were mainly comprised of (111) and (200) crystal orientation. The maximum hardness of coatings was 29.4 ± 1.5 GPa as the carbon content was 22.5 at.%. With an increase in the carbon content of coatings, the friction coefficients and wear rates of CrTiAlCN/SUS440C tribo-pairs were significantly reduced, and the wear mechanism of coatings changed from adhesive wear to abrasive wear.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Origins of ultralow thermal conductivity in 1-2-1-4 quaternary selenides

Engineering the thermal properties in solids is important for both fundamental physics (e.g. electric and phonon transport) and device applications (e.g. thermal insulating coating, thermoelectrics). In this paper, we report low thermal transport properties of four selenide compounds ( BaAb 2 SnSe 4 , BaCu 2 GeSe 4 , BaCu 2 SnSe 4 and SrCu 2 GeSe 4 ) with experimentally-measured thermal conductivity as low as 0.31 ± 0.03 W m -1 K -1 at 673 K for BaAg 2 SnSe 4 . Density functional theory calculations predict κ < 0.3 W m -1 K -1 for BaAg 2 SnSe 4 due to scattering from weakly-bonded Ag–Ag dimers. Lastly, defect calculations suggest that achieving high hole doping levels in these materials could be challenging due to monovalent (e.g., Ag) interstitials acting as hole killers, resulting in overall low electrical conductivity in these compounds.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Friction and Wear Properties of CrSiCN/SiC Tribopairs in Water Lubrication

CrSiCN coatings (3.4 at.% Si) were prepared on 316L stainless steels using unbalanced magnetron sputtering. According to the analysis results of x-ray diffractometer and x-ray photoelectrons spectroscopy, silicon in CrSiCN coatings mainly presented in the amorphous forms of a-SiN, a-SiCN and a-SiC. The hardness and Young’s modulus of CrSiN coatings were 19.4 ± 0.6 and 306.1 ± 5.9 GPa, respectively. In addition, the ball-on-disk sliding tests of CrSiCN/SiC tribopairs were performed in distilled water at varying velocities (0.1-0.5 m/s) and loads (2-12 N). The friction coefficient of tribopairs presented a decreasing trend with respect to velocity at low applied loads (≤ 4 N). To be specific, the low friction coefficient of 0.05-0.14 accompanied with polished wear scar was obtained at high velocities and low loads. Finally, the wear mechanism map of CrSiCN/SiC tribopairs was proposed based on a combination of friction coefficient, wear scar morphology and wear rates of tribopairs.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Ab initio prediction of fast non-equilibrium transport of nascent polarons in SrI 2 : a key to high-performance scintillation [First-principles study of hole polaron formation and migration in strontium iodide]

The excellent light yield proportionality of europium-doped strontium iodide (SrI 2 :Eu) has resulted in state-of-the-art γ-ray detectors with remarkably high-energy resolution, far exceeding that of most halide compounds. In this class of materials, the formation of self-trapped hole polarons is very common. However, polaron formation is usually expected to limit carrier mobilities and has been associated with poor scintillator light-yield proportionality and resolution. Here using a recently developed first-principles method, we perform an unprecedented study of polaron transport in SrI 2 , both for equilibrium polarons, as well as nascent polarons immediately following a self-trapping event. We propose a rationale for the unexpected high-energy resolution of SrI 2 . We identify nine stable hole polaron configurations, which consist of dimerised iodine pairs with polaron-binding energies of up to 0.5 eV. They are connected by a complex potential energy landscape that comprises 66 unique nearest-neighbour migration paths. Ab initio molecular dynamics simulations reveal that a large fraction of polarons is born into configurations that migrate practically barrier free at room temperature. Consequently, carriers created during γ-irradiation can quickly diffuse away reducing the chance for nonlinear recombination, the primary culprit for non-proportionality and resolution reduction. We conclude that the flat, albeit complex, landscape for polaron migration in SrI 2 is a key for understanding its outstanding performance. This insight provides important guidance not only for the future development of high-performance scintillators but also of other materials, for which large polaron mobilities are crucial such as batteries and solid-state ionic conductors.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Crystal structure of the antigen-binding fragment of a monoclonal antibody specific for the multidrug-resistance-linked ABC transporter human P-glycoprotein

P-glycoprotein (P-gp) is a polyspecific ATP-dependent transporter linked to multidrug resistance in cancers that plays important roles in the pharmacokinetics of a large number of drugs. The drug-resistance phenotype of P-gp can be modulated by the monoclonal antibody UIC2, which specifically recognizes human P-gp in a conformation-dependent manner. Here, the purification, sequence determination and high-resolution structure of the Fab fragment of UIC2 (UIC2/Fab) are reported. Purified UIC2/Fab binds human P-gp with a 1:1 stoichiometry. Crystals of UIC2/Fab are triclinic (space group P 1), with unit-cell parameters a = 40.67, b = 44.91, c = 58.09 Å, α = 97.62, β = 99.10, γ = 94.09°, and diffracted X-rays to 1.6 Å resolution. The structure was determined by molecular replacement and refined to 1.65 Å resolution. The asymmetric unit contains one molecule of UIC2/Fab, which exhibits a positively charged antigen-binding surface, suggesting that it might recognize an oppositely charged extracellular epitope of P-gp.

59 BASIC BIOLOGICAL SCIENCES↗
DOE OSTI2016

Electronic structure descriptor for the discovery of narrow-band red-emitting phosphors

Narrow-band red-emitting phosphors are a critical component of phosphor-converted light-emitting diodes for highly efficient illumination-grade lighting. In this work, we report the discovery of a quantitative descriptor for narrow-band Eu 2+ -activated emission identified through a comparison of the electronic structures of known narrow-band and broad-band phosphors. We find that a narrow emission bandwidth is characterized by a large splitting of more than 0.1 eV between the two highest Eu 2+ 4 f 7 bands. By incorporating this descriptor in a high-throughput first-principles screening of 2259 nitride compounds, we identify five promising new nitride hosts for Eu 2+ -activated red-emitting phosphors that are predicted to exhibit good chemical stability, thermal quenching resistance, and quantum efficiency, as well as narrow-band emission. Lastly, our findings provide important insights into the emission characteristics of rare-earth activators in phosphor hosts and a general strategy to the discovery of phosphors with a desired emission peak and bandwidth.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Crystal-field calculations for transition-metal ions by application of an opposing potential

We propose a fully ab initio method, the opposing crystal potential (OCP), to calculate the crystal-field parameters of transition-metal impurities in insulator hosts. Through constrained density functional calculations, OCP obtains the constraining Lagrange multipliers, which act as a cancellation potential against the crystal field and lead to spherical d-electron distribution. Furthermore, the method is applied to several insulators doped with Mn 4+ and Mn 2+ ions and shown to be in good agreement with experiment.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Red-emitting manganese-doped aluminum nitride phosphor

Here, we report high efficiency luminescence with a manganese-doped aluminum nitride red-emitting phosphor under 254 nm excitation, as well as its excellent lumen maintenance in fluorescent lamp conditions, making it a candidate replacement for the widely deployed europium-doped yttria red phosphor. Solid-state reaction of aluminum nitride powders with manganese metal at 1900 °C, 10 atm N2 in a reducing environment results in nitrogen deficiency, as revealed diffuse reflectance spectra. When these powders are subsequently annealed in flowing nitrogen at 1650 °C, higher nitrogen content is recovered, resulting in white powders. Silicon was added to samples as an oxygen getter to improve emission efficiency. NEXAFS spectra and DFT calculations indicate that the Mn dopant is divalent. From DFT calculations, the UV absorption band is proposed to be due to an aluminum vacancy coupled with oxygen impurity dopants, and Mn2+ is assumed to be closely associated with this site. In contrast with some previous reports, we find that the highest quantum efficiency with 254 nm excitation (Q.E. = 0.86 ± 0.14) is obtained in aluminum nitride with a low manganese doping level of 0.06 mol.%. The principal Mn2+ decay of 1.25 ms is assigned to non-interacting Mn sites, while additional components in the microsecond range appear with higher Mn doping, consistent with Mn clustering and resultant exchange coupling. Slower components are present in samples with low Mn doping, as well as strong afterglow, assigned to trapping on shallow traps followed by detrapping and subsequent trapping on Mn.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Study of self-compliance behaviors and internal filament characteristics in intrinsic SiO{sub x}-based resistive switching memory

Self-compliance characteristics and reliability optimization are investigated in intrinsic unipolar silicon oxide (SiO{sub x})-based resistive switching (RS) memory using TiW/SiO{sub x}/TiW device structures. The program window (difference between SET voltage and RESET voltage) is dependent on external series resistance, demonstrating that the SET process is due to a voltage-triggered mechanism. The program window has been optimized for program/erase disturbance immunity and reliability for circuit-level applications. The SET and RESET transitions have also been characterized using a dynamic conductivity method, which distinguishes the self-compliance behavior due to an internal series resistance effect (filament) in SiO{sub x}-based RS memory. By using a conceptual “filament/resistive gap (GAP)” model of the conductive filament and a proton exchange model with appropriate assumptions, the internal filament resistance and GAP resistance can be estimated for high- and low-resistance states (HRS and LRS), and are found to be independent of external series resistance. Our experimental results not only provide insights into potential reliability issues but also help to clarify the switching mechanisms and device operating characteristics of SiO{sub x}-based RS memory.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

FInal Report: First Principles Modeling of Mechanisms Underlying Scintillator Non-Proportionality

This final report presents work carried out on the project “First Principles Modeling of Mechanisms Underlying Scintillator Non-Proportionality” at Lawrence Livermore National Laboratory during 2013-2015. The scope of the work was to further the physical understanding of the microscopic mechanisms behind scintillator nonproportionality that effectively limits the achievable detector resolution. Thereby, crucial quantitative data for these processes as input to large-scale simulation codes has been provided. In particular, this project was divided into three tasks: (i) Quantum mechanical rates of non-radiative quenching, (ii) The thermodynamics of point defects and dopants, and (iii) Formation and migration of self-trapped polarons. The progress and results of each of these subtasks are detailed.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Surface plasmon resonances behavior in visible light of non-metal perovskite oxides AgNbO{sub 3}

We investigate the surface plasmon resonances (SPRs) behavior of silver niobate (AgNbO{sub 3}) experimentally and theoretically. Result shows that the localized SPRs (LSPRs) of AgNbO{sub 3} combining with its interband transitions enlarge the absorption band across the whole ultraviolet-visible range. The LSPRs behavior in visible-light is mainly ascribed to the metal-like state of silver ion and self-assembled microstructures of AgNbO{sub 3} microcrystal. The ab initio density functional theory calculations are carried out to obtain the further insight of the SPRs behaviors. Theoretical study indicates that the Ag atoms are weakly bound in the perovskite structure, leading to a metal-like state, which was the key factor to SPRs behavior of AgNbO{sub 3}.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗