Engineering topics

Wolf, M.

Publications and source records attributed to Wolf, M..

At least 37 records · Page 2

NASA NTRS1981

Transport velocity transformation - A convenient method for performance analysis of multilayer solar cell structure

It is noted that in the case of low-level injection, space-charge quasi-neutrality, and spatially constant material parameters (including an electrostatic field), the individual layer can be treated analytically and the basic solar cell performance parameters can be evaluated from three equations. The first equation represents the transformation of the transport velocity across the layer from the other layer boundary. The second establishes the light-generated current output from the layer interface, under the influence of the transport velocities and minority-carrier density at both layer boundaries and of bulk recombination. The third equation describes the flow of these carriers across other layers. The power of the approach is considered to lie in its facility for analysis of the solar cell's performance layer by layer, giving a clear picture of the individual layer's influence on cell efficiency.

Wolf, M.↗

NASA NTRS1981

Analysis and evaluation in the production process and equipment area of the low-cost solar array project

The effect of solar cell metallization pattern design on solar cell performance and the costs and performance effects of different metallization processes are discussed. Definitive design rules for the front metallization pattern for large area solar cells are presented. Chemical and physical deposition processes for metallization are described and compared. An economic evaluation of the 6 principal metallization options is presented. Instructions for preparing Format A cost data for solar cell manufacturing processes from UPPC forms for input into the SAMIC computer program are presented.

Wolf, M.↗

NASA NTRS1981

Analysis and evaluation in the production process and equipment area of the low-cost solar array project

The attributes of the various metallization processes were investigated. It is shown that several metallization process sequences will lead to adequate metallization for large area, high performance solar cells at a metallization add on price in the range of $6. to 12. m squared, or 4 to $.8/W(peak), assuming 15% efficiency. Conduction layer formation by thick film silver or by tin or tin/lead solder leads to metallization add-on prices significantly above the $6. to 12/m squared range c.) The wet chemical processes of electroless and electrolytic plating for strike/barrier layer and conduction layer formation, respectively, seem to be most cost effective.

Wolf, M.↗

NASA NTRS1981

Metallization for large-area solar cells

In large area, low cost solar cells of any type, the contact and grid structure metallization is an important factor which has an effect on the efficiency of the solar cell and its reliability. The present investigation is concerned with aspects of solar cell efficiency. An optimized metallization design leads to minimum total power loss, which is related to a simultaneous minimization of ohmic voltage drops and of shading of the front surface of the cell by the overlaid metal. The requirements regarding the design for a low-loss metallization pattern for the front surface of large area solar cells are represented by a set of design rules listed in a table. The total shading and voltage drop on such cells can be held to about 5%. However, not every metallization process is suited for meeting the requirements of the low-cost design. The low losses can be achieved only by use of several bus lines containing a bulk conductor, such as a wire.

Wolf, M.↗

NASA NTRS1980

Interactions of efficiency and material requirements for terrestrial silicon solar cells

The transport velocity transformation method was used to analyze solar cell designs to determine optimum cell structures. It was found that low resistivity materials should be used up to the onset of Auger recombination; a properly designed three-layer structure permits base region approaching an ideal device in performance; and that higher resistivity front regions will need more sophisticated grid metallization structures than those used now. It was concluded that new features will provide idealized silicon cell structures yielding airmass 1 efficiencies in the 24-26.5% range, with real efficiencies near 22%.

Bowler, D. L.↗

NASA NTRS1980

Updating the limit efficiency of silicon solar cells

The limit efficiency of a silicon solar cell is investigated using an analytical approach. The analytical model is based on the solution of a transport equation for minority carriers derived from the Shockley equations. On the basis of the computations, a 'narrow-region' design approach is suggested for both the front and the back regions of the solar cell. The design relies on low effective surface-recombination velocities, a textured front surface, and an optical internally reflecting back surface. With this approach, the limit efficiency is near 25%, and the optimum cell is 50 to 150 microns thick.

Wolf, M.↗

NASA NTRS1980

Low cost processes for fabricating silicon solar cells

Solar cell fabrication processes, in particular junction formation and metallization, are evaluated in terms of cell efficiencies, process yields, module packing factors, and energy cost effectiveness. It is shown that for junction formation, the diffusion processes provide a relatively low-cost approach. The costs per unit cell area can be further reduced by increased wafer area and mechanized wafer handling. The costs for a large number of metallization processes, excluding the costs of the metal, are roughly comparable. However, their varying influence on cell performance leads to a significant spread in the allowable process costs.

Goldman, H.↗

NASA NTRS1979

Analysis and evaluation in the production process and equipment area of the low-cost solar array project

Analyses of slicing processes and junction formation processes are presented. A simple method for evaluation of the relative economic merits of competing process options with respect to the cost of energy produced by the system is described. An energy consumption analysis was developed and applied to determine the energy consumption in the solar module fabrication process sequence, from the mining of the SiO2 to shipping. The analysis shows that, in current technology practice, inordinate energy use in the purification step, and large wastage of the invested energy through losses, particularly poor conversion in slicing, as well as inadequate yields throughout. The cell process energy expenditures already show a downward trend based on increased throughput rates. The large improvement, however, depends on the introduction of a more efficient purification process and of acceptable ribbon growing techniques.

Goldman, H.↗

NASA NTRS1979

Updating the limit efficiency of silicon solar cells

Evaluation of the limit efficiency based on the simplest, most basic mathematical method that is appropriate for the conditions imposed by the cell model is discussed. The methodology, the solar cell structure, and the selection of the material parameters used in the evaluation are described. The results are discussed including a set of design goals derived from the limit efficiency.

Wolf, M.↗

NASA NTRS1979

Analysis and evaluation in the production process and equipment area of the low-cost solar array project

The energy consumed in manufacturing silicon solar cell modules was calculated for the current process, as well as for 1982 and 1986 projected processes. In addition, energy payback times for the above three sequences are shown. The module manufacturing energy was partitioned two ways. In one way, the silicon reduction, silicon purification, sheet formation, cell fabrication, and encapsulation energies were found. In addition, the facility, equipment, processing material and direct material lost-in-process energies were appropriated in junction formation processes and full module manufacturing sequences. A brief methodology accounting for the energy of silicon wafers lost-in-processing during cell manufacturing is described.

Goldman, H.↗

NASA NTRS1979

Analysis and evalaution in the production process and equipment area of the low-cost solar array project

The manufacturing methods for photovoltaic solar energy utilization are assessed. Economic and technical data on the current front junction formation processes of gaseous diffusion and ion implantation are presented. Future proposals, including modifying gaseous diffusion and using ion implantation, to decrease the cost of junction formation are studied. Technology developments in current processes and an economic evaluation of the processes are included.

Goldman, H.↗

NASA NTRS1979

Analysis and Evaluation of Processes and Equipment in Tasks 2 and 4 of the Low-cost Solar Array Project

To facilitate the task of objectively comparing competing process options, a methodology was needed for the quantitative evaluation of their relative cost effectiveness. Such a methodology was developed and is described, together with three examples for its application. The criterion for the evaluation is the cost of the energy produced by the system. The method permits the evaluation of competing design options for subsystems, based on the differences in cost and efficiency of the subsystems, assuming comparable reliability and service life, or of competing manufacturing process options for such subsystems, which include solar cells or modules. This process option analysis is based on differences in cost, yield, and conversion efficiency contribution of the process steps considered.

Wolf, M.↗

NASA NTRS1978

Analysis and Evaluation of Processes and Equipment in Tasks 2 and 4 of the Low-cost Solar Array Project

The significant economic data for the current production multiblade wafering and inner diameter slicing processes were tabulated and compared to data on the experimental and projected multiblade slurry, STC ID diamond coated blade, multiwire slurry and crystal systems fixed abrasive multiwire slicing methods. Cost calculations were performed for current production processes and for 1982 and 1986 projected wafering techniques.

Goldman, H.↗

NASA NTRS1978

Analysis and evaluation of process and equipment in tasks 2 and 4 of the Low Cost Solar Array project

Several experimental and projected Czochralski crystal growing process methods were studied and compared to available operations and cost-data of recent production Cz-pulling, in order to elucidate the role of the dominant cost contributing factors. From this analysis, it becomes apparent that substantial cost reductions can be realized from technical advancements which fall into four categories: an increase in furnace productivity; the reduction of crucible cost through use of the crucible for the equivalent of multiple state-of-the-art crystals; the combined effect of several smaller technical improvements; and a carry over effect of the expected availability of semiconductor grade polysilicon at greatly reduced prices. A format for techno-economic analysis of solar cell production processes was developed, called the University of Pennsylvania Process Characterization (UPPC) format. The accumulated Cz process data are presented.

Goldman, H.↗

NASA NTRS1978

Analysis and evaluation of processes and equipment in tasks 2 and 4 of the low-cost solar array project

Goldman, H.↗

NASA NTRS1978

Hot forming of silicon sheet, silicon sheet growth development for the large area silicon sheet task of the low cost silicon solar array project

The hot workability of polycrystalline silicon was studied. Uniaxail stress-strain curves are given for strain rates in the range of .0001 to .1/sec and temperatures from 1100 to 1380 C. At the highest strain rates at 1380 C axial strains in excess of 20% were easily obtainable without cracking. After deformations of 36%, recrystallization was completed within 0.1 hr at 1380 C. When the recrystallization was complete, there was still a small volume fraction of unrecyrstallized material which appeared very stable and may degrade the electronic properties of the bulk materials. Texture measurements showed that the as-produced vapor deposited polycrystalline rods have a 110 fiber texture with the 110 direction parallel to the growth direction and no preferred orientation about this axis. Upon axial compression perpendicular to the growth direction, the former 110 fiber axis changed to 111 and the compression axis became 110 . Recrystallization changed the texture to 110 along the former fiber axis and to 100 along the compression axis.

Graham, C. D., Jr.↗

NASA NTRS1978

Evaluation of options for process sequences

A methodology is being developed to ease the comparative evaluation of competing options in the process sequence for the manufacture of photovoltaic solar energy utilization systems. This evaluation will largely involve process economic analyses but will place equal emphasis on other characteristics, including energy consumption and environmental effects of the process options. Early analyses have been performed for the energy consumption in the arc furnace reduction of SiO2, for the costs and energy consumption in CZ crystal pulling and various slicing processes, and for the total energy consumption of process sequence through the completed module.

Wolf, M.↗

NASA NTRS1977

Investigation of the double exponential in the current-voltage characteristics of silicon solar cells

Difficulties in relating observed current-voltage characteristics of individual silicon solar cells to their physical and material parameters were underscored by the unexpected large changes in the current-voltage characteristics telemetered back from solar cells on the ATS-1 spacecraft during their first year in synchronous orbit. Depletion region recombination was studied in cells exhibiting a clear double-exponential dark characteristic by subjecting the cells to proton irradiation. A significant change in the saturation current, an effect included in the Sah, Noyce, Shockley formulation of diode current resulting from recombination in the depletion region, was caused by the introduction of shallow levels in the depletion region by the proton irradiation. This saturation current is not attributable only to diffusion current from outside the depletion region and only its temperature dependence can clarify its origin. The current associated with the introduction of deep-lying levels did not change significantly in these experiments.

Wolf, M.↗