Engineering topics

Wohlgemuth, J. H.

Publications and source records attributed to Wohlgemuth, J. H..

6 records

NASA NTRS1982

Process Research ON Semix Silicon Materials (PROSSM)

A cost effective process sequence was identified, equipment was designed to implement a 6.6 MW per year automated production line, and a cost analysis projected a $0.56 per watt cell add-on cost for this line. Four process steps were developed for this program: glass beads back clean-up, hot spray antireflective coating, wave soldering of fronts, and ion milling for edging. While spray dopants were advertised as an off the shelf developed product, they were unreliable with shorter than advertised shelf life.

Wohlgemuth, J. H.↗

NASA NTRS1982

Process Research On Polycrystalline Silicon Material (PROPSM)

The mechanisms limiting performance in polycrystalline silicon was determined. The initial set of experiments in this task entails the fabrication of cells of various thicknesses for four different bulk resistivities between 0.1 and 10 omega-cm. The results for the first two lots are presented.

Wohlgemuth, J. H.↗

NASA NTRS1982

Process Research On Polycrystalline Silicon Material (PROPSM)

Performance limiting mechanisms in polycrystalline silicon are investigated by fabricating a matrix of solar cells of various thicknesses from polycrystalline silicon wafers of several bulk resistivities. The analysis of the results for the entire matrix indicates that bulk recombination is the dominant factor limiting the short circuit current in large grain (greater than 1 to 2 mm diameter) polycrystalline silicon, the same mechanism that limits the short circuit current in single crystal silicon. An experiment to investigate the limiting mechanisms of open circuit voltage and fill factor for large grain polycrystalline silicon is designed. Two process sequences to fabricate small cells are investigated.

Culik, J. S.↗

NASA NTRS1982

Development of a new low cost antireflective coating technique for solar cells

The goal of this study was the development of an antireflective (AR) coating technique that has the potential for high throughput and low cost yet is capable of producing films of good optical quality. Previous efforts to develop sprayed AR coatings had utilized titanium isopropoxide mixed with volatile solvents. These films worked well on smooth surfaces but when applied to etched semi-crystalline silicon surfaces yielded inconsistent results with more than 20 percent of the AM1 incident light being reflected. In this program titanium isopropoxide was sprayed directly onto heater wafers (410 C) to produce a uniform AR coating even on highly textured surfaces. Tests on various types of solar cells yielded performance improvements for the hot sprayed AR cells that are equivalent to that observed for evaporated TiOx AR coated cells. As an extension of this effort a new double layer AR consisting of a bottom layer of hot sprayed titanium isopropoxide and a top layer of hot sprayed aluminum isopropoxide in methylene chloride has resulted in more than 10 percent improvement in cell output as compared to a single layer AR cell.

Wohlgemuth, J. H.↗

NASA NTRS1979

Analysis of the Effects of Impurities in Silicon

A solar cell fabrication and analysis program to determine the effects on the resultant solar cell efficiency of impurities incorporated into silicon is conducted. Flight quality technologies and quality assurance are employed to assure that variations in cell performance are due to the impurities incorporated in the silicon. The type and level of impurity doping in each test lot is given and the mechanism responsible for the degradation of cell performance is identified and correlated to the doped impurities.

Wohlgemuth, J. H.↗

NASA NTRS1979

Analysis of the Effects of Impurities in Silicon

A solar cell fabrication and analysis program was conducted to determine the effects on the resultant solar cell efficiency of impurities intentionally incorporated into silicon. The program employed flight quality technologies and quality assurance to assure that variations in cell performance were due to the impurities incorporated in the silicon. The initial verification runs have resulted in an average AM0 cell efficiency of 12.8% at 25 C.

Wohlgemuth, J. H.↗