Engineering topics

Weinberg, I.

Publications and source records attributed to Weinberg, I..

At least 73 records · Page 4

NASA NTRS1981

Gallium arsenide solar cells-status and prospects for use in space

Gallium Arsenide solar cells now equal or surpass the ubiquitous silicon solar cells in efficiency, radiation resistance, annealability, and in the capability for producing usable power output at elevated temperatures. NASA has developed a long-range research and development program to capitalize on these manifold advantages. In this paper we review the current state and future prospects for R&D in this promising solar cell material, and indicate the progress being made toward development of GaAs cells suitable for a variety of space missions. Results are presented from studies which demonstrate conclusively that GaAs cells can provide a net mission cost and weight savings for certain important mission classes.

Brandhorst, H. W.↗

NASA NTRS1981

A theory of the n-i-p silicon solar cell

A computer model has been developed, based on an analytical theory of the high base resistivity BSF n(+)(pi)p(+) or p(+)(nu)n(+) silicon solar cell. The model makes very few assumptions and accounts for nonuniform optical generation, generation and recombination in the junction space charge region, and bandgap narrowing in the heavily doped regions. The paper presents calculated results based on this model and compares them to available experimental data. Also discussed is radiation damage in high base resistivity n(+)(pi)p(+) space solar cells.

Goradia, C.↗

NASA NTRS1980

Radiation damage in high voltage silicon solar cells

High open circuit voltage cell designs based on 0.1 Ohm cm p-type silicon were irradiated with 1 MeV electrons and their performance determined to fluences as high as 10 to the 15th power per sq cm. Of the three cell designs, radiation induced degradation was greatest in the high low emitter (HLE) cell. The diffused and ion implanted cells degraded approximately equally but less than the HLE cell. Degradation was greatest in an HLE cell exposed to X-rays before electron irradiation. The cell regions controlling both short circuit current and open circuit voltage degradation were defined in all three cell types. An increase in front surface recombination velocity accompanied time dependent degradation of an HLE cell after X-irradiation. It was speculated that this was indirectly due to a decrease in positive charge at the silicon oxide interface. Modifications aimed at reducing radiation induced degradation are proposed for all three cell types.

Weinberg, I.↗

NASA NTRS1980

Origin of reverse annealing in radiation-damaged silicon solar cells

The paper employs relative defect concentrations, energy levels, capture cross sections, and minority carrier diffusion lengths in order to identify the defect responsible for the reverse annealing observed in a radiation damaged n(+)/p silicon solar cell. It is reported that the responsible defect, with the energy level at +0.30 eV, has been tentatively identified as boron-oxygen-vacancy complex. In conclusion, it is shown that removal of this defect could result in significant cell recovery when annealing at temperatures well below the currently required 400 C.

Weinberg, I.↗

NASA NTRS1980

Radiation damage in high voltage silicon solar cells

Three high open-circuit voltage cell designs based on 0.1 ohm-cm p-type silicon were irradiated with 1 MeV electrons and their performance determined to fluences as high as 10 to the 15th/sq cm. Of the three cell designs, radiation induced degradation was greatest in the high-low emitter (HLE) cell. The diffused and ion implanted cells degraded approximately equally but less than the HLE cell. Degradation was greatest in an HLE cell exposed to X-rays before electron irradiation. The cell regions controlling both short-circuit current and open-circuit voltage degradation were defined in all three cell types. An increase in front surface recombination velocity accompanied time dependent degradation of a HLE cell after X-irradiation. It was speculated that this was indirectly due to a decrease in positive charge at the silicon-oxide interface. Modifications aimed at reducing radiation induced degradation are proposed for all three cell types.

Weinberg, I.↗

NASA NTRS1980

Radiation damage in lithium-counterdoped n/p silicon solar cells

Lithium counterdoped n+/p silicon solar cells were irradiated with 1 MV electrons and their post irradiation performance and low temperature annealing properties were compared to that of the 0.35 ohm cm control cells. Cells fabricated from float zone and Czochralski grown silicon were investigated. It was found that the float zone cells exhibited superior radiation resistance compared to the control cells, while no improvement was noted for the Czochralski grown cells. Room temperature and 60 C annealing studies were conducted. The annealing was found to be a combination of first and second order kinetics for short times. It was suggested that the principal annealing mechanism was migration of lithium to a radiation induced defect with subsequent neutralization of the defect by combination with lithium. The effects of base lithium gradient were investigated. It was found that cells with negative base lithium gradients exhibited poor radiation resistance and performance compared to those with positive or no lithium gradients; the latter being preferred for overall performance and radiation resistance.

Hermann, A. M.↗

NASA NTRS1980

Radiation damage annealing mechanisms and possible low temperature annealing in silicon solar cells

The defect responsible for reverse annealing in 2 ohm/cm n(+)/p silicon solar cells was identified. This defect, with energy level at e sub v + 0.30 eV was tentatively identified as a boron oxygen-vacancy complex. Results indicate that its removal could result in significant annealing for 2 ohm/cm and lower resistivity cells at temperatures as low as 200 C. These results were obtained by use of an expression derived from the Shockley-Read-Hall recombination theory which relates measured diffusion length ratios to relative defect concentrations and electron capture cross sections. The relative defect concentrations and one of the required capture cross sections are obtained from Deep Level Transient Spectroscopy. Four additional capture cross sections are obtained using diffusion length data and data from temperature dependent lifetime studied. These calculated results are in reasonable agreement with experimental data.

Weinberg, I.↗

NASA NTRS1980

Radiation damage in high voltage silicon solar cells

Three high open-circuit voltage cell designs based on 0.1 ohm-cm p-type silicon were irradiated with 1 MeV electrons and their performance determined to fluences as high as 10 to the 15th power/sq cm. Of the three cell designs, radiation induced degradation was greatest in the high-low emitter (HLE cell). The diffused and ion implanted cells degraded approximately equally but less than the HLE cell. Degradation was greatest in an HLE cell exposed to X-rays before electron irradiation. The cell regions controlling both short-circuit current and open-circuit voltage degradation were defined in all three cell types. An increase in front surface recombination velocity accompanied time dependent degradation of an HLE cell after X-irradiation. It was speculated that this was indirectly due to a decrease in positive charge at the silicon-oxide interface. Modifications aimed at reducing radiation induced degradation are proposed for all three cell types.

Weinberg, I.↗

NASA NTRS1980

Annealing of radiation damage in low resistivity silicon solar cells

The reduction of the temperatures required to restore cell performance after irradiation was investigated with emphasis on the annealing characteristics of two groups of cells containing different amounts of oxygen and carbon. Examination of defect behavior in irradiated boron doped silicon leads to the tentative conclusion that further reduction in annealing temperature could be achieved by decreasing the carbon concentration and either neutralizing the divacancy and/or minimizing its formation as a result of irradiation. A significant reduction in the temperature required to remove radiation induced degradation in 0.1 ohm centimeter silicon solar cells was achieved.

Weinberg, I.↗

NASA NTRS1980

Radiation damage in silicon NIP solar cells

The performance parameters of n(+) p p(+) silicon solar cells of varying thicknesses with boron doped p base resistivities of 1250 and 84 ohm centimeters were determined. High injection theory was used to analyze the experimental data. Results from an analysis of open circuit voltages show a much greater contribution to V(oc) from the back junction than is the case for the lower resistivity in common use. The base minority carrier distribution is seen to be significant in determining the contribution of V(B), the base contribution to V(oc). Although V(B) is small, its value increases with increasing radiation fluence. In this connection it is noted that, with illumination from the p(+) side, the sign of V(B) becomes positive, and V(B) itself becomes an additive term to V(oc). Diffusion lengths determined under high injection conditions are significantly greater than those obtained under low injection, while damage coefficients under low injection are higher than those obtained under high injection conditions.

Weinberg, I.↗

NASA NTRS1980

Radiation damage in lithium-counterdoped N/P silicon solar cells

The radiation resistance and low-temperature annealing properties of lithium-counterdoped n(+)-p silicon solar cells are investigated. Cells fabricated from float zone and Czochralski grown silicon were irradiated with 1 MeV electrons and their performance compared to that of 0.35 ohm-cm control cells. The float zone cells demonstrated superior radiation resistance compared to the control cells, while no improvement was noted for the Czochralski grown cells. Annealing kinetics were found to lie between first and second order for relatively short times, and the most likely annealing mechanism was found to be the diffusion of lithium to defects with the subsequent neutralization of defects by combination with lithium. Cells with zero lithium gradients exhibited the best radiation resistance.

Hermann, A. M.↗

NASA NTRS1980

Radiation damage annealing mechanisms and possible low temperature annealing in silicon solar cells

Deep level transient spectroscopy and the Shockley-Read-Hall recombination theory are used to identify the defect responsible for reverse annealing in 2 ohm-cm n+/p silicon solar cells. This defect, with energy level at Ev + 0.30 eV, has been tentatively identified as a boron-oxygen-vacancy complex. It has been also determined by calculation that the removal of this defect could result in significant annealing at temperatures as low as 200 C for 2 ohm-cm and lower resistivity cells.

Weinberg, I.↗

NASA NTRS1979

Annealing of radiation damage in 0.1- and 2-ohm-centimeter Silicon solar cells

Isochronal and isothermal annealing studies were conducted on 0.1 and 2 ohm centimeter n(+)/p silicon cells after irradiation by 1 MeV electrons at fluences of 10 to the 14th power, 5 times 10 to the 14th power, and 10 to the 15th power per square centimeter. For the 0.1 ohm centimeter cells, reverse annealing was not observed in the isochronal data. However, reverse annealing was observed between approximately 200 and 325 C in the isochronal data of the 2 ohm centimeter cells. Isothermal annealing of 0.1 ohm centimeter cells at 500 C restored pre-irradiation maximum power P sub max within 20 minutes at fluence = 10 to the 14th power, in 180 minutes at fluence = 5 times 10 to the 14th power and to 92 percent of pre-irradiation P sub max in 180 minutes for fluence = 10 to the 15th power. Annealing at 450 C was found inadequate to restore 0.1 ohm centimeter cell performance within reasonable times for all fluence levels. By comparison, at 450 C, the P sub max of 2 ohm centimeter cells was restored within 45 minutes, for the two highest fluence levels, while for the lowest fluence, restoration was completed within 15 minutes. Spectral response data indicate that, for both resistivities, degradation occurs predominantly in the cells p-type base region.

Weinberg, I.↗

NASA NTRS1979

Radiation damage in high-voltage silicon solar cells

Three types of open circuit high voltage solar cells were tested to determine their performance after exposure to 1 MeV electron irradiations. The cells with a relatively deep n-type emitter were more susceptible to radiation damage than other high open circuit high voltage cells. The use of diffused or ion implanted junctions leads to open circuit high voltage cell designs that are less susceptible to radiation damage. These latter two types of cells show degradations that are typical of the 0.1 ohm-cm material from which they are fabricated. Furthermore, exposure to ionizing radiation causes oxide degradation and decreased cell performance in cells that depend on a charged oxide to achieve significant cell properties. Hence, the combination of a charged oxide and a relatively deep n-type emitter is not recommended for incorporation into a cell designed for use in the particulate radiation environment of space.

Weinberg, I.↗

NASA NTRS1979

Reverse annealing in radiation-damaged, silicon solar cells

In order to understand the results in terms of properties of the radiation induced defects, a combination of diffusion length measurements and defect data obtained from Deep Level Transient Spectroscopy were used. The results indicate that the defect at E sub v + 0.30 eV is responsible for the observed reversed annealing. The defect was identified as a boron-oxygen vacancy complex. This identification is a guide to processing efforts aimed at increasing the concentration of these radiation induced defects.

Weinberg, I.↗

NASA NTRS1978

Ionized dopant concentrations at the heavily doped surface of a silicon solar cell

Data are combined with concentrations obtained by a bulk measurement method using successive layer removal with measurements of Hall effect and resistivity. From the MOS (metal-oxide-semiconductor) measurements it is found that the ionized dopant concentration N has the value (1.4 + or - 0.1) x 10 to the 20th power/cu cm at distances between 100 and 220 nm from the n(+) surface. The bulk measurement technique yields average values of N over layers whose thickness is 2000 nm. Results show that, at the higher concentrations encountered at the n(+) surface, the MOS C-V technique, when combined with a bulk measurement method, can be used to evaluate the effects of materials preparation methodologies on the surface and near surface concentrations of silicon cells.

Weinberg, I.↗

NASA NTRS1977

Effects of outdoor exposure on solar cell modules in the ERDA/NASA Lewis Research Center Systems Test Facility

The effects of outdoor exposure were determined by comparing standard I-V data obtained for the as-received modules with similar data obtained after removal from the field and cleaning with detergent solution. All modules measured in this way exhibited nonrecoverable degradation in P sub maximum varying from 4 to 7 percent. One module exposed for 41 days exhibited partial cell discoloration, loss of front surface metallization over the discolored portion, and a decrease in P sub maximum of 7 percent, tentatively attributed to cell damage. Measurements before and after cleaning showed a recoverable degradation due to dirt accumulation. This recoverable loss in power was 11 percent after 245 days in the field for one brand of module, 6 percent after 48 days for another brand, and 4 1/2 percent for the third brand.

Weinberg, I.↗

NASA NTRS1977

Impurity concentrations and surface charge densities on the heavily doped face of a silicon solar cell

Increased solar cell efficiencies are attained by reduction of surface recombination and variation of impurity concentration profiles at the n(+) surface of silicon solar cells. Diagnostic techniques are employed to evaluate the effects of specific materials preparation methodologies on surface and near surface concentrations. It is demonstrated that the MOS C-V method, when combined with a bulk measurement technique, yields more complete concentration data than are obtainable by either method alone. Specifically, new solar cell MOS C-V measurements are combined with bulk concentrations obtained by a successive layer removal technique utilizing measurements of sheet resistivity and Hall coefficient.

Weinberg, I.↗