Engineering topics

Weinberg, I.

Publications and source records attributed to Weinberg, I..

At least 55 records · Page 3

NASA NTRS1985

Theory of the high base resistivity n(+)pp(+) silicon solar cell and its application to radiation damage effects

Particulate radiation in space is a principal source of silicon solar cell degradation, and an investigation of cell radiation damage at higher base resistivities appears to have implication toward increasing solar cell and, therefore, useful satellite lifetimes in the space environment. However, contrary to expectations, it has been found that for cells with resistivities of 84 and 1250 ohm cm, the radiation resistance decreases as cell base resistivity increases. An analytical solar-cell computer model was developed with the objective to determine the reasons for this unexpected behavior. The present paper has the aim to describe the analytical model and its use in interpreting the behavior, under irradiation, of high-resistivity solar cells. Attention is given to boundary conditions at the space-charge region edges, cell currents, cell voltages, the generation of the theoretical I-V characteristic, experimental results, and computer calculations.

Goradia, C.↗

NASA NTRS1985

Performance and temperature dependencies of proton irradiated n/p GaAs and n/p silicon cells

The n/p homojunction GaAs cell is found to be more radiation resistant than p/nheteroface GaAs under 10 MeV proton irradiation. Both GaAs cell types outperform conventional silicon n/p cells under the same conditions. An increase temperature dependency of maximum power for the GaAs n/p cells is attributed largely to differences in Voc between the two GaAs cell types. These results and diffusion length considerations are consistent with the conclusion that p-type GaAs is more radiation resistant than n-type and therefore that the n/p configuration is possibly favored for use in the space radiation environment. However, it is concluded that additional work is required in order to choose between the two GaAs cell configurations.

Weinberg, I.↗

NASA NTRS1985

Potential for use of indium phosphide solar cells in the space radiation environment

Indium phosphide solar cells were observed to have significantly higher radiation resistance than either GaAs or Si after exposure to 10 MeV proton irradiation data and previous 1 MeV electron data together with projected efficiencies for InP, it was found that these latter cells produced more output power than either GaAs or Si after specified fluences of 10 MeV protons and 1 MeV electrons. Estimates of expected performance in a proton dominated space orbit yielded much less degradation for InP when compared to the remaining two cell types. It was concluded that, with additional development to increase efficiency, InP solar cells would perform significantly better than either GaAs or Si in the space radiation environment.

Weinberg, I.↗

NASA NTRS1985

Radiation damage in high-resistivity silicon solar cells

High-resistivity silicon solar cells exhibit reduced radiation damage when light is incident on the gridded back surface. Under back illumination, radiation damage decreases as cell resistivity increases; under front illumination, radiation damage increases as cell resistivity increases. Thin back-illuminated cells outperform conventional 10 omega cm 50 and 200 micron cells at low 1-MeV electron fluences. However, at higher fluences, the conventional cells exhibit superior radiation resistance. This is attributed to the low BOL diffusion lengths observed in the thin, sack-illuminated cell. These results are discussed in terms of injected charge distributions, electric fields in the cell base, and the effects of a dominant boron-oxygen defect.

Weinberg, I.↗

NASA NTRS1985

Performance and temperature dependencies of proton irradiated n/p and p/n GaAs and n/p silicon cells

n/p homojunction GaAs cells are found to be more radiation resistant than p/n heteroface GaAs under 10 MeV proton irradiation. Both GaAs cell types outperform conventional silicon n/p cells under the same conditions. An increased temperature dependency of maximum power for the GaAs n/p cells is attributed to differences in Voc between the two GaAs cell types. These results and diffusion length considerations are consistent with the conclusion that p-type GaAs is more radiation resistant than n-type and therefore that the n/p configuration is possibly favored for use in the space radiation environment. However, it is concluded that additional work is required in order to choose between the two GaAs cell configurations.

Weinberg, I.↗

NASA NTRS1985

Potential for use of InP solar cells in the space radiation environment

Weinberg, I.↗

NASA NTRS1984

Increased radiation resistance in lithium-counterdoped silicon solar cells

Lithium-counterdoped n(+)p silicon solar cells are found to exhibit significantly increased radiation resistance to 1-MeV electron irradiation when compared to boron-doped n(+)p silicon solar cells. In addition to improved radiation resistance, considerable damage recovery by annealing is observed in the counterdoped cells at T less than or equal to 100 C. Deep level transient spectroscopy measurements are used to identify the defect whose removal results in the low-temperature aneal. It is suggested that the increased radiation resistance of the counterdoped cells is primarily due to interaction of the lithium with interstitial oxygen.

Weinberg, I.↗

NASA NTRS1984

Radiation damage and defect behavior in ion-implanted, lithium counterdoped silicon solar cells

Boron doped silicon n+p solar cells were counterdoped with lithium by ion implanation and the resultant n+p cells irradiated by 1 MeV electrons. The function of fluence and a Deep Level Transient Spectroscopy (DLTS) was studied to correlate defect behavior with cell performance. It was found that the lithium counterdoped cells exhibited significantly increased radiation resistance when compared to boron doped control cells. It is concluded that the annealing behavior is controlled by dissociation and recombination of defects. The DLTS studies show that counterdoping with lithium eliminates at least three deep level defects and results in three new defects. It is speculated that the increased radiation resistance of the counterdoped cells is due primarily to the interaction of lithium with oxygen, single vacancies and divacancies and that the lithium-oxygen interaction is the most effective in contributing to the increased radiation resistance.

Weinberg, I.↗

NASA NTRS1984

Radiation tolerance of low resistivity, high voltage silicon solar cells

The radiation tolerance of the following three low resistivity, high voltage silicon solar cells was investigated: (1) the COMSAT MSD (multi-step diffused) cell, (2) the MinMIS cell, and (3) the MIND cell. A description of these solar cells is given along with drawings of their configurations. The diffusion length damage coefficients for the cells were calculated and presented. Solar cell spectral response was also discussed. Cells of the MinMIS type were judged to be unsuitable for use in the space radiation environment.

Weizer, V. G.↗

NASA NTRS1984

Cell and defect behavior in lithium-counterdoped solar cells

Some n(+)/p cells in which lithium is introduced as a counterdopant, by ion-implantation, into the cell's boron-doped p-region were studied. To determine if the cells radiation resistance could be significantly improved by lithium counterdoping. Defect behavior was related to cell performance using deep level transient spectroscopy. Results indicate a significantly increased radiation resistance for the lithium counterdoped cells when compared to the boron doped 1 ohm-cm control cell. The increased radiation resistance of the lithium counterdoped cells is due to the complexing of lithium with divacancies and boron. It is speculated that complexing with oxygen and single vacancies also contributes to the increased radiation resistance. Counterdoping silicon with lithium results in a different set of defects.

Weinberg, I.↗

NASA NTRS1984

The effects of lithium counterdoping on radiation damage and annealing in n(+)p silicon solar cells

Boron-doped silicon n(+)p solar cells were counterdoped with lithium by ion implantation and the resultant n(+)p cells irradiated by 1 MeV electrons. Performance parameters were determined as a function of fluence and a deep level transient spectroscopy (DLTS) study was conducted. The lithium counterdoped cells exhibited significantly increased radiation resistance when compared to boron doped control cells. Isochronal annealing studies of cell performance indicate that significant annealing occurs at 100 C. Isochronal annealing of the deep level defects showed a correlation between a single defect at E sub v + 0.43 eV and the annealing behavior of short circuit current in the counterdoped cells. The annealing behavior was controlled by dissociation and recombination of this defect. The DLTS studies showed that counterdoping with lithium eliminated three deep level defects and resulted in three new defects. The increased radiation resistance of the counterdoped cells is due to the interaction of lithium with oxygen, single vacancies and divacancies. The lithium-oxygen interaction is the most effective in contributing to the increased radiation resistance.

Weinberg, I.↗

NASA NTRS1984

Radiation damage and defect behavior in ion-implanted, lithium counterdoped silicon solar cells

Boron doped silicon n+p solar cells were counterdoped with lithium by ion implantation and the resuitant n+p cells irradiated by 1 MeV electrons. The function of fluence and a Deep Level Transient Spectroscopy (DLTS) was studied to correlate defect behavior with cell performance. It was found that the lithium counterdoped cells exhibited significantly increased radiation resistance when compared to boron doped control cells. It is concluded that the annealing behavior is controlled by dissociation and recombination of defects. The DLTS studies show that counterdoping with lithium eliminates at least three deep level defects and results in three new defects. It is speculated that the increased radiation resistance of the counterdoped cells is due primarily to the interaction of lithium with oxygen, single vacanies and divacancies and that the lithium-oxygen interaction is the most effective in contributing to the increased radiation resistance.

Weinberg, I.↗

NASA NTRS1982

Effects of processing and dopant on radiation damage removal in silicon solar cells

Gallium and boron doped silicon solar cells, processed by ion implantation followed by either laser or furnace anneal were irradiated by 1 MeV electrons and their postirradiation recovery by thermal annealing was determined. During the postirradiation anneal, gallium doped cells prepared by both processes recovered more rapidly and exhibited none of the severe reverse annealing observed for similarly processed 2 ohm-cm boron doped cells. Ion implanted furnace annealed 0.1 ohm-cm boron doped cells exhibited the lowest post-irradiation annealing temperatures after irradiation. The drastically lowered recovery temperature is attributed to the reduced oxygen and carbon content of the 0.1 ohm-cm cells. Analysis based on defect properties and annealing kinetics indicates that further reduction in annealing temperature is attainable with further reduction in the silicon's carbon and/or divacancy content after irradiation.

Weinberg, I.↗

NASA NTRS1982

Effects of processing and dopant on radiation damage removal in silicon solar cells

Gallium and boron doped silicon solar cells, processed by ion-implantation followed by either laser or furnace anneal were irradiated by 1 MeV electrons and their post-irradiation recovery by thermal annealing determined. During the post-irradiation anneal, gallium-doped cells prepared by both processes recovered more rapidly and exhibited none of the severe reverse annealing observed for similarly processed 2 ohm-cm boron doped cells. Ion-implanted furnace annealed 0.1 ohm-cm boron doped cells exhibited the lowest post-irradiation annealing temperatures (200 C) after irradiation to 5 x 10 to the 13th e(-)/sq cm. The drastically lowered recovery temperature is attributed to the reduced oxygen and carbon content of the 0.1 ohm-cm cells. Analysis based on defect properties and annealing kinetics indicates that further reduction in annealing temperature should be attainable with further reduction in the silicon's carbon and/or divacancy content after irradiation.

Weinberg, I.↗

NASA NTRS1982

Radiation damage in front and back illuminated high resistivity silicon solar cells

Radiation induced degradation, in front and back illuminated 84 and 1250 ohm-cm n+pp+ silicon solar cells, was determined and cell performance interpreted using calculated optically injected charge distributions and cell voltage components. The 84 ohm-cm cell degraded less when illuminated from the front or n+ side compared to that when illuminated from the back or p+ side. On the other hand, the 1250 ohm-cm cell degraded less when back illuminated. It is concluded that, in addition to the usual mechanisms leading to decreased collection efficiencies, loss of conductivity modulation is a major cause of radiation damage in high resistivity silicon solar cells. These results suggest that radiation damage to high resistivity n+pp+ cells can be decreased by increasing cell collection efficiency and illuminating the cells from the p+ side.

Weinberg, I.↗

NASA NTRS1982

Radiation damage

The radiation damage workshop considered a variety of topics among which were the need for equivalent electron fluences in gallium arsenide, the possibility of 15 percent end-of-life efficiencies for silicon, increasing radiation resistance in gallium arsenide, annealing of radiation damage and the need for radiation damage studies in cascade cells. The workshop members agreed that a high priority should be assigned to obtaining equivalent electron fluences for gallium arsenide cells. It was suggested that 1 MeV would be a reasonable electron energy for this purpose. Special care should be given to proton irradiations particularly for energies below 1 MeV. In addition, omnidirectional rather than normal incidence protons should be used. It was also agreed that there was a need for obtaining damage coefficients in gallium arsenide. In silicon, there is a requirement for additional flight data, especially in proton dominated orbits. These data are needed to further check the accuracy of the 1 MeV equivalence fluences.

Weinberg, I.↗

NASA NTRS1981

Performance of high resistivity n+pp+ silicon solar cells under 1 MeV electron irradiation

High resistivity (1250 and 84 ohm-cm) n(+)pp(+) silicon solar cells were irradiated and their performance evaluated as a function of fluence. The greatest degradation in power occurred for the higher resistivity cell. The data were analyzed under open circuit conditions, and the components of V sub oc determined as a function of fluence. It was found that the voltage contributions from the front and back junctions decreased while the base component (V sub B) increased with fluence. The anomalous behavior of V sub B was attributed to an increase in the base minority carrier gradient with fluence. An argument that the increased power degradation in the 1250 ohm-cm cells was attributable to an increased voltage drop in the base is presented. Diffusion lengths calculated under high injection conditions were significantly greater than those determined under low injection. This was attributed to a saturation of recombination centers under high injection conditions.

Weinberg, I.↗

NASA NTRS1981

Reduced annealing temperatures in silicon solar cells

Cells irradiated to a fluence of 5x10,000,000,000,000/square cm showed short circuit current on annealing at 200 C, with complete annealing occurring at 275 C. Cells irradiated to 100,000,000,000,000/square cm showed a reduction in annealing temperature from the usual 500 to 300 C. Annealing kinetic studies yield an activation energy of (1.5 + or - 2) eV for the low fluence, low temperature anneal. Comparison with activation energies previously obtained indicate that the presently obtained activation energy is consistent with the presence of either the divacancy or the carbon interstitial carbon substitutional pair, a result which agrees with the conclusion based on defect behavior in boron-doped silicon.

Weinberg, I.↗