New High-Throughput Dual-Electron Beam Spacecraft Charging Test Capability at JPL
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Engineering topics
Publications and source records attributed to Thorbourn, Dennis.
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We present low-cost and effective methods and results for high levels of Total Ionizing Dose testing performed on the Xilinx Kintex UltraScale (20nm) Field-Programmable Gate Array evaluation board using 60Co and 2 MeV electron sources.
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NASA has planned a mission to study Jupiter’s moon, Europa. The mission would place a spacecraft into orbit around Jupiter, performing nominally 45 flybys of the moon. The suite of instruments onboard the spacecraft would investigate Europa’s potential to sustain life, studying the moon’s atmosphere, water-ice crust, suspected subsurface ocean, and rocky interior. The radiation environment at Europa’s orbit is severe and presents a significant threat to the spacecraft. There are several radiation effects that could be problematic, one of which is internal charging. Problems due to internal charging arise when high energy electrons penetrate the spacecraft and deposit within onboard dielectrics or floating metals. These charges can build up over time, generating electric fields that exceed the breakdown strength of materials in the region. A rapid discharge of the stored charges may occur, sending current pulses into electronics and potentially damaging them. An Internal Electrostatic Discharge (IESD) design environment was created for the planned Europa mission [Kim et al, in press]. The IESD design environment is meant to characterize the part of the radiation environment that poses the largest threat to the spacecraft with respect to internal charging. The environment was based off of electron data gathered by the Galileo spacecraft. Over the past year, the internal charging threat to several hardware components of the planned Europa Clipper spacecraft have been characterized using simulations and/or tests. The subject report documents one such test on Micro-D connectors.
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Radiation Effects Group investigates the effects of space radiation on present and future microelectronic and optoelectronic technologies, evaluate the risk of using them in specific space missions, and recommend component and design techniques for JPL and NASA programs to reduce reliability risk from space radiation.
Dose rate effects are examined in linear bipolar transistors at high and low dose rates. At high dose rates, approximately 50% of the damage anneals at room temperature, even though these devices exhibit enhanced damage at low dose rate. The unexpected recovery of a significant fraction of the damage after tests at high dose rate requires changes in existing test standards. Tests at low temperature with a one-second radiation pulse width show that damage continues to increase for more than 3000 seconds afterward, consistent with predictions of the CTRW model for oxides with a thickness of 700 nm.