Engineering topics

Thakoor, A. P.

Publications and source records attributed to Thakoor, A. P..

At least 37 records · Page 2

NASA NTRS1987

Electronic implementation of associative memory based on neural network models

An electronic embodiment of a neural network based associative memory in the form of a binary connection matrix is described. The nature of false memory errors, their effect on the information storage capacity of binary connection matrix memories, and a novel technique to eliminate such errors with the help of asymmetrical extra connections are discussed. The stability of the matrix memory system incorporating a unique local inhibition scheme is analyzed in terms of local minimization of an energy function. The memory's stability, dynamic behavior, and recall capability are investigated using a 32-'neuron' electronic neural network memory with a 1024-programmable binary connection matrix.

Moopenn, A.↗

NASA NTRS1987

A neurocomputer based on an analog-digital hybrid architecture

A novel analog-digital hybrid architecture based on the utilization of high density digital random access memories for the storage of the synaptic weights of a neural network, and high speed analog hardware to perform neural computation is described. An electronic neurocomputer based on such an architecture is ideally suited for investigating the dynamics, associative recall properties, and computational capabilities of neural networks and provides significant speed improvement in comparison to conventional software based neural network simulations. As a demonstration of the feasibility of the hybrid architectural concept, a prototype breadboard hybrid neurocomputer system with 32 neurons has been designed and fabricated with off-the-shelf hardware components. The performance of the breadboard system has been tested for variety of applications including associative memory and combinatorial problem solving such as Graph Coloring, and is discussed in this paper.

Moopenn, A.↗

NASA NTRS1987

Binary synaptic connections based on memory switching in a-Si:H for artificial neural networks

A scheme for nonvolatile associative electronic memory storage with high information storage density is proposed which is based on neural network models and which uses a matrix of two-terminal passive interconnections (synapses). It is noted that the massive parallelism in the architecture would require the ON state of a synaptic connection to be unusually weak (highly resistive). Memory switching using a-Si:H along with ballast resistors patterned from amorphous Ge-metal alloys is investigated for a binary programmable read only memory matrix. The fabrication of a 1600 synapse test array of uniform connection strengths and a-Si:H switching elements is discussed.

Thakoor, A. P.↗

NASA NTRS1987

Neural network based feed-forward high density associative memory

A novel thin film approach to neural-network-based high-density associative memory is described. The information is stored locally in a memory matrix of passive, nonvolatile, binary connection elements with a potential to achieve a storage density of 10 to the 9th bits/sq cm. Microswitches based on memory switching in thin film hydrogenated amorphous silicon, and alternatively in manganese oxide, have been used as programmable read-only memory elements. Low-energy switching has been ascertained in both these materials. Fabrication and testing of memory matrix is described. High-speed associative recall approaching 10 to the 7th bits/sec and high storage capacity in such a connection matrix memory system is also described.

Daud, T.↗

NASA NTRS1986

The role of oxygen in porous molybdenum electrodes for the alkali metal thermoelectric converter

A model for chemical reactions in porous molybdenum electrodes is presented which is based on thermochemical and kinetic data, known sodium-molybdenum-oxygen chemistry, X-ray diffraction analysis of molybdenum and molybdenum oxide electrodes, and the electrochemical behavior of the cell. Enhanced sodium transport through the electrode in its optimum performance state is found to be due to the high sodium ion conductivity of molten Na2MoO4 in the pores, and the electrical conduction to the molybdenum matrix by Na2Mo3O6. The decline of electrode performance is shown to be due to a combination of loss mechanisms for the Na-Mo-O compounds including reduction at short circuit, disproportionation of Na2Mo3O6 at open circuit, and the evaporation of Na2MoO4 at elevated temperature. It is suggested that operation of the cell at moderate voltage of about 0.5 V corresponding to maximum power may be a more stable condition for the porous electrode than open-circuit stand or short-circuit, where degradation reactions are heightened.

Williams, R. M.↗

NASA NTRS1986

Room temperature deposition of superconducting NbN for superconductor-insulator-superconductor junctions

The deposition of stoichiometric B1-crystal-structure (111) NbN films on glass or sapphire substrates by reactive dc magnetron sputtering is reported. High-purity Ar-N2 mixtures are used in the apparatus described by Thakoor et al. (1985), and typical deposition parameters are given as background pressure about 10 ntorr, voltage -325 V, current 1 A, deposition rate 1.35 nm/s, film thickness 500 nm, P(Ar) 5-17 mtorr, initial P(N2) 2-6 mtorr, and room temperature. The N2 consumption-injection characteristics are studied and found to control NbN formation using well-conditioned Nb targets. Films with transition temperatures 15-16 K are obtained at P(Ar) = 12.9 + or - 0.2 mtorr and P(N2) = 3.7 + or - 0.1 mtorr. SIS junctions of area about 0.001 sq cm fabricated using the NbN films are shown to have I-V characteristics with nonlinearity parameter about 110 and NbN superconducting-gap parameter Delta = about 2.8 meV.

Thakoor, S.↗

NASA NTRS1986

Room-Temperature Deposition of NbN Superconducting Films

Films with high superconducting transition temperatures deposited by reactive magnetron sputtering. Since deposition process does not involve significantly high substrate temperatures, employed to deposit counter electrode in superconductor/insulator/superconductor junction without causing any thermal or mechanical degradation of underlying delicate tunneling barrier. Substrates for room-temperature deposition of NbN polymeric or coated with photoresist, making films accessible to conventional lithographic patterning techniques. Further refinements in deposition technique yield films with smaller transition widths, Tc of which might approach predicted value of 18 K.

Thakoor, S.↗

NASA NTRS1986

Solid-State Detector for Trace Materials

Detector for trace chemicals senses as few as 10 to the 12th power molecules of given material on surface. Contains no moving parts, amenable to large-scale integration, and operates at room temperature. Potential applications in industrial process control and in environmental analysis. Characteristic signals indicate presence of certain chemicals.

Lambe, J. J.↗

NASA NTRS1986

Magnetron Sputtering Deposits Corrosion-Resistant Alloy

Dense, amorphous, metallic film resists corrosion attack by acid. Coatings thermally stable up to 800 degrees C and made corrosion resistant by proper choice of sputtering deposition conditions. Protective, corrosionresistant coatings applied to process equipment that comes in contact with aqueous, neutral, or acidic solutions in chemical, petroleum, and paper industries, in wastewater treatment, and in heat exchangers.

Khanna, S. K.↗

NASA NTRS1985

High T(c) superconducting NbN films deposited at room temperature

The dc reactive magnetron sputtering process yields stoichiometric NbN films with superconducting transition temperature T(c) as high as 15.7 K on substrates as varied as glass, glazed ceramic, fused quartz, and sapphire. These films posses fcc (B1) structure and (111) texture. The most dominant factors governing the formation of the transition metal nitrides are the relative metal and nitrogen fluxes incident on the substrate and the background argon pressure (which dictates the overall reactive sites and residence times for nitrogen).

Thakoor, S.↗

NASA NTRS1985

Thin-film chemical sensors based on electron tunneling

The physical mechanisms underlying a novel chemical sensor based on electron tunneling in metal-insulator-metal (MIM) tunnel junctions were studied. Chemical sensors based on electron tunneling were shown to be sensitive to a variety of substances that include iodine, mercury, bismuth, ethylenedibromide, and ethylenedichloride. A sensitivity of 13 parts per billion of iodine dissolved in hexane was demonstrated. The physical mechanisms involved in the chemical sensitivity of these devices were determined to be the chemical alteration of the surface electronic structure of the top metal electrode in the MIM structure. In addition, electroreflectance spectroscopy (ERS) was studied as a complementary surface-sensitive technique. ERS was shown to be sensitive to both iodine and mercury. Electrolyte electroreflectance and solid-state MIM electroreflectance revealed qualitatively the same chemical response. A modified thin-film structure was also studied in which a chemically active layer was introduced at the top Metal-Insulator interface of the MIM devices. Cobalt phthalocyanine was used for the chemically active layer in this study. Devices modified in this way were shown to be sensitive to iodine and nitrogen dioxide. The chemical sensitivity of the modified structure was due to conductance changes in the active layer.

Khanna, S. K.↗

NASA NTRS1985

Refractory amorphous metallic (W/0.6/ Re/0.4/)76B24 coatings on steel substrates

Refractory metallic coatings of (W/0.6/ Re/0.4/)76B24 (WReB) have been deposited onto glass, quartz, and heat-treated AISI 52100 bearing steel substrates by dc magnetron sputtering. As-deposited WReB films are amorphous, as shown by their diffuse X-ray diffraction patterns; chemically homogeneous, according to secondary ion mass spectrometry (SIMS) analysis; and they exhibit a very high (approximately 1000 C) crystallization temperature. Adhesion strength of these coatings on heat-treated AISI 52100 steel is in excess of approximately 20,000 psi and they possess high microhardness (approximately 2400 HV50). Unlubricated wear resistance of such hard and adherent amorphous metallic coatings on AISI 52100 steel is studied using the pin-on-disc method under various loading conditions. Amorphous metallic WReB coatings, about 4 microns thick, exhibit an improvement of more than two and a half orders of magnitude in the unlubricated wear resistance over that of the uncoated AISI 52100 steel.

Thakoor, A. P.↗

NASA NTRS1985

Magnetron-Sputtered Amorphous Metallic Coatings

Amorphous coatings of refractory metal/metalloid-based alloys deposited by magnetron sputtering provide extraordinary hardness and wear resistance. Sputtering target fabricated by thoroughly mixing powders of tungsten, rhenium, and boron in stated proportions and pressing at 1,200 degrees C and 3,000 lb/in. to second power (21 MPa). Substrate lightly etched by sputtering before deposition, then maintained at bias of - 500 V during initial stages of film growth while target material sputtered onto it. Argon gas at pressure used as carrier gas for sputter deposition. Coatings dense, pinhole-free, extremely smooth, and significantly resistant to chemical corrosion in acidic and neutral aqueous environments.

Thakoor, A. P.↗

NASA NTRS1985

Observation of adsorbate-induced surface states by elastic electron tunneling spectroscopy

Electronic structure induced by adsorbates at the interface of Al/AlOx/Au tunnel junctions has been observed by elastic electron tunneling spectroscopy. Strong structures appearing in the tunneling spectra above approximately 1 eV after exposure to I, Hg, Bi, and organohalides, have been interpreted in terms of adsorbate-induced surface states. The spectroscopic capabilities of elastic electron tunneling spectroscopy may be useful in the area of chemical detection. In the broader sense, the observation of adsorbate-induced unoccupied electronic states below the vacuum energy, makes elastic electron tunneling spectroscopy a potentially useful technique for the study of surfaces.

Leduc, H. G.↗

NASA NTRS1985

Corrosion resistant coating

A method of coating a substrate with an amorphous metal is described. A solid piece of the metal is bombarded with ions of an inert gas in the presence of a magnetic field to provide a vapor of the metal which is deposited on the substrate at a sufficiently low gas pressure so that there is formed on the substrate a thin, uniformly thick, essentially pinhole-free film of the metal.

Khanna, S. K.↗

NASA NTRS1985

Internal stresses in wear and corrosion resistant amorphous metallic coatings of (W/0.6/Re/0.4/)76B24 and (Mo/0.6/Ru/0.4/)82B18

Hard protective coatings in the W-Re-B and Mo-Ru-B alloy systems have been deposited by magnetron sputtering onto soda-lime glass and heat-treated AISI 52100 steel substrates. X-ray diffraction has confirmed the amorphous nature of the as-deposited coatings, and their crystallization temperatures were determined by differential thermal analysis to be 1000 and 790 C for W-Re-B and Mo-Ru-B coatings, respectively. Both coatings exhibit high microhardness; Mo-Ru-B, in addition, has excellent corrosion resistance by comparison with pure Mo at high anodic potentials. Attention is given to the influence of internal stresses on the protective properties of the coatings deposited under different conditions.

Thakoor, A. P.↗

NASA NTRS1985

Electronic device aspects of neural network memories

The basic issues related to the electronic implementation of the neural network model (NNM) for content addressable memories are examined. A brief introduction to the principles of the NNM is followed by an analysis of the information storage of the neural network in the form of a binary connection matrix and the recall capability of such matrix memories based on a hardware simulation study. In addition, materials and device architecture issues involved in the future realization of such networks in VLSI-compatible ultrahigh-density memories are considered. A possible space application of such devices would be in the area of large-scale information storage without mechanical devices.

Lambe, J.↗

NASA NTRS1985

Alkali Metal Thermoelectric Conversion (AMTEC) for space nuclear power systems

Performance parameters of the Alkali Metal Thermoelectric Converter (AMTEC) for a 100 kW electric power system have been calculated at four technological levels assuming a heat pipe-cooled nuclear reactor heat source. The most advanced level considered would operate between 1180 K converter temperature and 711 K radiator temperature at 16 percent efficiency, and would weigh 1850 kg with a radiator area of 43 sq m. In addition, electrode research studies for the AMTEC systems have been conducted utilizing an experimental test cell of Bankston et al. (1983) and Mo and several Mo-Ti electrodes. It was found that the Mo-Ti electrodes offered no improvement in lifetime characteristics over the pure Mo electrodes, however, oxygen treatment of a degraded Mo electrode restored its specific power output to 90 percent of its original specific power and maintained this level for 60 hr, thus offering a potential for lifetime stability.

Bankston, C. P.↗