Engineering topics
Publications and source records attributed to Surek, T..
Concentration of carbide impurities in silicon ribbon is reduced by growing crystalline ribbon with die one wall higher than other. Height difference controls shape of meniscus at liquid/crystal interface and concentrates silicon carbide impurity near one of broad faces. Opposite face is left with above-average purity. Significantly improves efficiency of solar cells made from ribbon.
An evaluation of advanced research and development topics in photovoltaic that is summarized. The intent was to develop priorities in a list of advanced research and development activities. Thirty-five activities in 10 major categories were evaluated by their contributions to basic scientific advances, potential impact on further technology development by private industry, and priorities for federal advanced research and development funding.
The edge-defined, film-fed growth (EFG) technique has been employed to grow silicon ribbons for photovoltaic applications. Considerable progress has been made in recent years in developing the technique to the point that long lengths of silicon ribbon can be routinely grown. In order to attain the full low-cost potential of the EFG technique, several further developments such as the growth of thinner and wider ribbons, increase in ribbon growth rate, and improvements in material quality are needed. The technological problems to be solved and the approaches employed to achieve these goals are discussed.
The background and progress to date of EFG ribbon growth for solar cell applications are briefly reviewed. The design and operation of a multiple ribbon-per-operator manufacturing system are then described. Results are presented of cost studies of this system at three stages of development. In the latter stage, believed to be attainable by 1986, conversion costs for polycrystalline silicon into wafers are attained which are consistent with manufacture of photovoltaic systems at $0.50 per peak watt. Principal technological problems in the ribbon growth process are discussed.
Explore the source record for details and available documents.
Explore the source record for details and available documents.
Sustained growth of long lengths of silicon ribbons by the edge-defined film-fed growth (EFG) technique is shown to result in the attainment of an 'equilibrium' defect structure and orientation by the crystals. The structure consists of parallel defect boundaries parallel to the edges of the ribbon with a specific ribbon orientation. The influence of seed orientation on the attainment of this structure has been examined.
Progress in a program to produce high speed, thin, wide silicon sheets for fabricating 10% efficient solar cells is reported. An EFG ribbon growth system was used to perform growth rate and ribbon thickness experiments. A new, wide ribbon growth system was developed. A theoretical study of stresses in ribbons was also conducted. The EFG ribbons were observed to exhibit a characteristic defect structure which is orientation dependent in the early stages of growth.