Engineering topics
Publications and source records attributed to Smith, Lawrence S..
Report presents results of experiments where multiple-bit errors were induced in 256-kbit commercial integrated-circuit dynamic random-access memory (DRAM) by variety of normally incident heavy ions. Idea demonstrates utility of DRAM and methods used to analyze experimental data, with view towards applying methods and data to other digital integrated circuits.
Report describes experimental study of effects of temperature on vulnerability of integrated-circuit memories and other electronic logic devices to single-event effects - spurious bit flips or latch-up in logic state caused by impacts of energetic ions. Involved analysis of data on 14 different device types. In most cases examined, vulnerability to these effects increased or remain constant with temperature.
Experimental study presents examples of empirical modeling of single-event upset in negatively-doped-source/drain metal-oxide-semiconductor static random-access memory cells. Data supports adoption of simplified worst-case model in which cross sectionof SEU by ion above threshold energy equals area of memory cell.
Report presents theory and experimental data regarding newly discovered mode for single-event upsets, (SEU's) in complementary metal-oxide/semiconductor, static random-access memories, CMOS SRAM's. SEU cross sections larger than those expected from previously known modes given rise to speculation regarding additional mode, and subsequent cross-section measurements appear to confirm speculation.