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Siegel, Peter H.

Publications and source records attributed to Siegel, Peter H..

At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS2006

A Compact 600 GHz Electronically Tunable Vector Measurement System for Submillimeter Wave Imaging

A compact submillimeter wave transmission / reflection measurement system has been demonstrated at 560-635 GHz, with electronic tuning over the entire band. Maximum dynamic range measured at a single frequency is 90 dB (60 dB typical), and phase noise is less than +/- 2(deg). By using a frequency steerable lens at the source output and mixer input, the frequency agility of the system can be used to scan the source and receive beams, resulting in near real-time imaging capability using only a single pixel.

submillimeter wave imaging↗
NASA NTRS2006

A Compact 600 GHz Electronically Tunable Vector Measurement System for Submillimeter Wave Imaging

The design of a complete vector measurement system being tested over 560-635 GHz is presented. The topics include: 1) Current State-of-the-Art in Vector Measurements; 2) Submillimeter Active Imaging Requirements; 3) 600 GHz Vector Measurement System; 4) 450 MHz IF Signal; 5) 450 MHz IF signal @ 1 kHz Res. BW; 6) 450 MHz IF Signal Mixed with Shifted 450 MHz Reference Signal; 7) Reference Signal Offset Generator; 8) Cavity Bandpass Filter; 9) Miniature Multistage Helical Filter; 10) X36 450 MHz Multiplier; 11) 600 GHz Test Setup; 12) 600 GHz Transmit Module; 13) 600 GHz Receive Module; 14) Performance Tests: Amplitude Stability & Dynamic Range; 15) Performance Tests: Phase Stability; 16) Stability at Imaging Bandwidths; 17) Phase Measurement Verification; and 18) The Next Step: Imaging.

phase measurements↗
NASA NTRS2006

A compact 600 GHz electronically tunable vector measurement system for submillimeter wave imaging

A compact submillimeter wave transmission/reflection measurement system has been demonstrated at 560-635 GHz, with electronic tuning over the entire band. Maximum dynamic range measured at a single frequency is 100 dB (60 dB typical), and typical phase noise is less than +/- 1°. By using a frequency steerable lens at the source output and mixer input, the frequency agility of the system can be used to scan the source and receive beams, resulting in near realtime imaging capability using only a single pixel

Siegel, Peter H.↗
NASA NTRS2006

The Earth Observing System Microwave Limb Sounder (EOS MLS) on the Aura Satellite

The Earth Observing System Microwave Limb Sounder measures several atmospheric chemical species (OH, HO2, H2O, O3, HCl, ClO, HOCl, BrO, HNO3, N2O, CO, HCN, CH3CN, volcanic SO2), cloud ice, temperature, and geopotential height to improve our understanding of stratospheric ozone chemistry, the interaction of composition and climate, and pollution in the upper troposphere. All measurements are made simultaneously and continuously, during both day and night. The instrument uses heterodyne radiometers that observe thermal emission from the atmospheric limb in broad spectral regions centered near 118, 190, 240, and 640 GHz, and 2.5 THz. It was launched July 15, 2004 on the National Aeronautics and Space Administration's Aura satellite and started full-up science operations on August 13, 2004. An atmospheric limb scan and radiometric calibration for all bands are performed routinely every 25 s. Vertical profiles are retrieved every 165 km along the suborbital track, covering 82 S to 82 N latitudes on each orbit. Instrument performance to date has been excellent; data have been made publicly available; and initial science results have been obtained.

submillimeter wave↗
NASA NTRS2005

Carbon nanotube Schottky diodes using Ti-Schottky and Pt-ohmic contacts for high frequency applications

We have demonstrated Schottky diodes using semiconducting single-walled nanotubes (s-SWNTs) with titanium Schottky and platinum Ohmic contacts for high-frequency applications. The diodes are fabricated using angled evaporation of dissimilar metal contacts over an s-SWNT. The devices demonstrate rectifying behavior with large reverse bias breakdown voltages of greater than 15 V. To decrease the series resistance, multiple SWNTs are grown in parallel in a single device, and the metallic tubes are burnt-out selectively. At low biases these diodes showed ideality factors in the range of 1.5 to 1.9. Modeling of these diodes as direct detectors at room temperature at 2.5 terahertz (THz) frequency indicates noise equivalent powers (NEP) potentially comparable to that of the state-of-the-art gallium arsenide solid-state Schottky diodes, in the range of 10-13 W(square root)xHz.

semiconducting↗
NASA NTRS2004

Solid-state Terahertz Sources for Space Applications

This paper discusses the construction of solid-state frequency multiplier chains utilized far teraherz receiver applications such as the Herschel Space Observatory . Emphasis will he placed on the specific requirements to be met and challenges that were encountered. The availability of high power amplifiers at 100 GHz makes it possible to cascade frequency doublers and triplers with sufficient RF power to pump heterodyne receivers at THz frequencies. The environmental and mechanical constraints will be addressed as well as reliability issues.

solid state frequency↗
NASA NTRS2004

Field Emission Study of Carbon Nanotubes: High Current Density from Nanotube Bundle Arrays

We have investigated the field emission behavior of lithographically patterned bundles of multiwalled carbon nanotubes arranged in a variety of array geometries. Such arrays of nanotube bundles are found to perform significantly better in field emission than arrays of isolated nanotubes or dense, continuous mats of nanotubes, with the field emission performance depending on the bundle diameter and inter-bundle spacing. Arrays of 2-micrometers diameter nanotube bundles spaced 5 micrometers apart (edge-to-edge spacing) produced the largest emission densities, routinely giving 1.5 to 1.8 A/cm(sup 2) at approximately 4 V/micrometer electric field, and greater than 6 A/cm(sup 2) at 20 V/micrometers.

field emissions↗
NASA NTRS2004

A THz heterodyne instrument for biomedical imaging applications

An ultra-wide-dynamic-range heterodyne imaging system operating at 2.5 THz is described. The instrument employs room temperature Schottky barrier diode mixers and far infrared gas laser sources developed for NASA space applications. A dynamic range of over 100dB at fixed intermediate frequencies has been realized. Amplitude/phase tracking circuitry results in stability of 0.02 dB and +-2 degrees of phase. The system is being employed to characterize biological (human and animal derived tissues) and a variety of materials of interest to NASA. This talk will describe the instrument and some of the early imaging experiments on everything from mouse tail to aerogel.

biomedical applications↗
NASA NTRS2004

Self-contained sub-millimeter wave rectifying antenna integrated circuit

The invention is embodied in a monolithic semiconductor integrated circuit in which is formed an antenna, such as a slot dipole antenna, connected across a rectifying diode. In the preferred embodiment, the antenna is tuned to received an electromagnetic wave of about 2500 GHz so that the device is on the order of a wavelength in size, or about 200 microns across and 30 microns thick. This size is ideal for mounting on a microdevice such as a microrobot for example. The antenna is endowed with high gain in the direction of the incident radiation by providing a quarter-wavelength (30 microns) thick resonant cavity below the antenna, the cavity being formed as part of the monolithic integrated circuit. Preferably, the integrated circuit consists of a thin gallium arsenide membrane overlying the resonant cavity and supporting an epitaxial Gallium Arsenide semiconductor layer. The rectifying diode is a Schottky diode formed in the GaAs semiconductor layer and having an area that is a very small fraction of the wavelength of the 2500 GHz incident radiation. The cavity provides high forward gain in the antenna and isolation from surrounding structure.

Siegel, Peter H.↗
NASA NTRS2001

Nanoklystron: A Monolithic Tube Approach to THz Power Generation

The authors propose a new approach to THz power generation: the nanoklystron. Utilizing silicon micromachining techniques, the design and fabrication concept of a monolithic THz vacuum-tube reflex-klystron source is described. The nanoklystron employs a separately fabricated cathode structure composed of densely packed carbon nanotube field emitters and an add-in repeller. The nanotube cathode is expected to increase the current density, extend the cathode life and decrease the required oscillation voltage to values below 100 V. The excitation cavity is based on ridged-waveguide and differs from the conventional cylindrical re-entrant structures found in lower frequency klystrons. A quasi-static field analysis of the cavity and output coupling structure show excellent control of the quality factor and desired field distribution. Output power is expected to occur through an iris coupled matched rectangular waveguide and integrated pyramidal feed horn. The entire circuit is designed so as to be formed monolithically from two thermocompression bonded silicon wafers processed using deep reactive ion etching (DRIE) techniques. To expedite prototyping, a 600 GHz mechanically machined structure has been designed and is in fabrication. A complete numeric analysis of the nanoklystron circuit, including the electron beam dynamics has just gotten underway. Separate evaluation of the nanotube cathodes is also ongoing. The authors will describe the progress to date as well as plans for the immediate implementation and testing of nanoklystron prototypes at 640 and 1250 GHz.

Siegel, Peter H.↗
NASA NTRS2001

Gap Excitations and Series Loads in Microstrip Lines: Equivalent Network Characterization with Application to THz Circuits

At submillimeter wavelengths typical gap discontinuities in microstrip, CPW lines or at antenna terminals, which might contain diodes or active elements, cannot be viewed as simple quasi statically evaluated lumped elements. Planar Schottky diodes at 2.5 THz, for example, have a footprint that is comparable to a wavelength. Thus, apart from modelling the diodes themselves, the connection with their exciting elements (antennas or microstrip) gives rise to parasitics. Full wave or strictly numeric approaches can be used to account for these parasitics but at the expense of generality of the solution and the CPU time of the calculation. In this paper an equivalent network is derived that accurately accounts for large gap discontinuities (with respect to a wavelength) without suffering from the limitations of available numeric techniques.

Neto, Andrea↗
NASA NTRS1996

Split-Waveguide Mounts For Submillimeter-Wave Multipliers And Harmonic Mixers

Novel variation of split-waveguide mount for millimeter-and submillimeter-wavelength frequency multipliers and harmonic mixers developed. Designed to offer wide range of available matching impedances, while maintaining relatively simple fabrication sequence. Wide tuning range achieved with separate series and parallel elements, consisting of two pairs of noncontacting sliding backshorts, at fundamental and harmonic frequencies. Advantages include ease of fabrication, reliability, and tunability.

Raisanen, Antti↗
NASA NTRS1996

Open-Structure Mixer For Detection Of Hydroxyl

Single structure comprises dielectric-filled paraboloidal reflector, dipole antenna at focus of paraboloid, and mixing circuit at antenna developed for detecting electromagnetic radiation emitted by hydroxyl radical at frequency of 2,520 GHz (wavelength of 119 micrometers). Structure regarded as prototype for class of improved direct-detector and heterodyne circuits operating at millimeter and submillimeter wavelengths.

Siegel, Peter H.↗
NASA NTRS1995

Integrated back to back barrier-N-N(+) varactor diode tripler using a split-waveguide block

The back-to-back barrier-N-N(+) (bbBNN) varactor is a nonlinear device being developed for frequency multiplier applications above 100 GHz. Its symmetrical C-V characteristic, low series resistance, freedom from external bias and suitability to planarization make it an ideal choice for high frequency, low power, odd harmonic generation. In this paper, the performance of a 220-GHz waveguide tripler using, for the first time, a planar GaAs bbBNN device integrated on a quartz microstrip circuit is presented. A new split-waveguide block design has been employed to provide the proper embedding impedances to the device at the input and third harmonic output frequencies. A flange-to-flange tripling efficiency of 7% has been obtained at 220 GHz with an output power in excess of 700 mu W. This is believed to be the highest conversion efficiency yet reported for a tripler with an integrated device at this frequency. Theoretical calculations indicate that substantial improvement is possible with modest changes to the device and circuit parameters.

QUARTZ MICROSTRIP CIRCUITS↗
NASA NTRS1994

Microwave GaAs Integrated Circuits On Quartz Substrates

Integrated circuits for use in detecting electromagnetic radiation at millimeter and submillimeter wavelengths constructed by bonding GaAs-based integrated circuits onto quartz-substrate-based stripline circuits. Approach offers combined advantages of high-speed semiconductor active devices made only on epitaxially deposited GaAs substrates with low-dielectric-loss, mechanically rugged quartz substrates. Other potential applications include integration of antenna elements with active devices, using carrier substrates other than quartz to meet particular requirements using lifted-off GaAs layer in membrane configuration with quartz substrate supporting edges only, and using lift-off technique to fabricate ultrathin discrete devices diced separately and inserted into predefined larger circuits. In different device concept, quartz substrate utilized as transparent support for GaAs devices excited from back side by optical radiation.

Siegel, Peter H.↗