Engineering topics
Publications and source records attributed to Siegel, P..
A frequency tripler has been developed using an integrated planar back-to-back -n-n(sup +) varactor device in a waveguide mount at 220 GHz.
The back-to-back barrier-N-N + (bbBNN) varactor is a nonlinear device being developed for frequency multiplier applications above 100 GHz. Its symmetrical C-V characteristic, low series resistance and suitability to planarization make it ideal choice for high frequency, low power, odd harmonic generation. In this paper, development of an integrated planar multiplier device and its performance as a 220 GHz tripler is presented. A new split-waveguide block design has been used to provide the proper embedding impedances to the device. The performance over 200-240 GHz has been measured and the integrated bbBNN device is shown to provide as much as 734 microwatts output power. A flange-to-flange tripling efficiency of 7% has been obtained. This is believed to be the highest conversion efficiency yet reported for all planar tripler at this frequency. The performance is expected to be improved further with minor changes to the device and circuit parameters.
The proposed High Engergy-Solar Physics (HESP) million will require fine, precise, high aspect ratio modulation collimators for the High Energy Imagin Spectrometer (HEISPEC). The fabrication approach described here rests on the proven precision of semiconductor lithography - the ability to replicate extremely accurate patterns onto different planar substrateds.
Many millimeter-wave mixers and frequency multipliers today still employ a whisker contacted Schottky diode as the nonlinear device.
Series of computer programs developed to serve as tool in understanding behavior and subsequent optimization of millimeter-wave mixers. Major program in collection is general mixer-analysis program that performs complete large- and small-signal analysis of mixer with known diode and mount characteristics. Primary objective behind programs to gain better understanding of factors that affect performance of room-temperature, single-ended Schottky-diode mixers operating above 100 GHz.