Engineering topics
Publications and source records attributed to Siegel, P..
Recent innovations in ultra-high frequency, semiconductor device/component technology have enabled both traditional and new applications for space-borne millimeter- and submillimeter-wave heterodyne radiometer instruments.
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This talk will focus on the technology that is being developed to enhance and extend planar integrated Schottky devices and circuits to meet mission local oscillator requirements.
Low-noise broad IF band 240 GHz subharmonically pumped planar Schottky diode mixers for space-borne radiometers have been developed and characterized.
The OH radical is an important player in known ozone depletion cycles; however, due to its location in the atmosphere, it must be studied from either a balloon or spaceborne platform.
An automated RF/IF test system for complete, accurate measurement of millimeter and submillimeter-wave mixer performance is described.
The authors report on the design, analysis and performance of an all GaAs MMIC multiplier for use at submillimeter wavelengths.
This paper reports on the first all solid-state two-diode subharmonically pumped (SHP) mixer operating at 640 GHz.
The design and performance of a 640 GHz solid-state receiver using a fundamental planar-Schottky-diode mixer, InP Gunn diode oscillator, whisker-contacted Schottky-varactor-diode sextupler and folded-Fabry-Perot diplexer are reported.
A very simple black body calibration target is described for millimeter and submillimeter wavelengths.
A novel GaAs monolithic membrane-diode (MOMED) structure has been developed and implemented as a 2.5 THz Schottky diode mixer.
We report on a subharmonic mixer with a broad IF bandwidth that has been developed for the Microwave Instrument for the Rosetta Orbiter (MIRO) to study water transition lines occurring near 557 GHz.
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A T-gate-like structure has been developed, fabricated and tested as the anode for millimeter and submillimeter-wave Schottky diodes. The low parasitics of the T-anode diodes yield extremely high cutoff frequencies, making the diodes useable at frequencies well beyond 1 THz. The diodes were tested as an antiparallel-pair, integrated monolithically with microstrip circuitry on a quartz substrate, in a subharmonically pumped waveguide mixer. A double sideband noise temperature of 600 K with a conversion loss of 4.7 dB were measured at 200 GHz. This is believed to be the lowest noise temperature ever reported for a room temperature subharmonically-pumped Schottky diode mixer at this frequency.
The back-to-back barrier-N-N+ (bbBNN) varactor is a nonlinear device being developed for frequency multiplier applications above 100 GHz. Its symmetrical C-V characteristic, low series resistance and suitability to planarization make it ideal choice for high frequency, low power, odd harmonic generation. In this paper, the performance of a 220 GHz tripler using integrated planar bbBNN devices is presented.