Engineering topics

Scheiman, David

Publications and source records attributed to Scheiman, David.

28 records · Page 2

NASA NTRS2001

Photovoltaic Engineering Testbed: A Facility for Space Calibration and Measurement of Solar Cells on the International Space Station

The Photovoltaic Engineering Testbed ("PET") is a facility to be flown on the International Space Station to perform calibration, measurement, and qualification of solar cells in the space environment and then returning the cells to Earth for laboratory use. PET will allow rapid turnaround testing of new photovoltaic technology under AM0 conditions.

Landis, Geoffrey A.↗

NASA NTRS2001

Advance Power Technology Experiment for the Starshine 3 Satellite

The Starshine 3 satellite will carry several power technology demonstrations. Since Starshine 3 is primarily a passive experiment and does not need electrical power to successfully complete its mission, the requirement for a highly reliable power system is greatly reduced. This creates an excellent opportunity to test new power technologies. Several government and commercial interests have teamed up to provide Starshine 3 with a small power system using state-of-the-art components. Starshine 3 will also fly novel integrated microelectronic power supplies (IWS) for evaluation.

Jenkins, Phillip↗

NASA NTRS2001

A Dust Characterization Experiment for Solar Cells Operating on Mars

During the Viking and Pathfinder missions to Mars, significant amounts of dust accumulated on the spacecrafts. In Pathfinder's case, the dust obscured the solar panels on the lander and the rover degrading their output current. The material adherence experiment aboard the Pathfinder rover quantified the rate of decrease in short circuit current at 0.28% per day. This rate is unacceptably high for long duration missions. In response, NASA has developed the Dust Accumulation and Removal Technology (DART) experiment. DART has three instruments for characterizing dust settling out of the atmosphere and tests two methods to keep dust from settling on solar cells.

Jenkins, Phillip↗

NASA NTRS2000

Mate and Dart: An Instrument Package for Characterizing Solar Energy and Atmospheric Dust on Mars

The MATE (Mars Array Technology Experiment) and DART (Dust Accumulation and Removal Test) instruments were developed to fly as part of the Mars ISPP Precursor (MIP) experiment on the (now postponed) Mars-2001 Surveyor Lander. MATE characterizes the solar energy reaching the surface of Mars, and measures the performance and degradation of solar cells under Martian conditions. DART characterizes the dust environment of Mars, measures the effect of settled dust on solar arrays, and investigates methods to mitigate power loss due to dust accumulation.

Landis, Geoffrey A.↗

NASA NTRS1996

Review of recent thermophotovoltaic (TPV) research at Lewis Research Center

Thermophotovoltaic (TPV) research at NASA Lewis Research Center that began in the late 1980's is reviewed. This work has been concentrated on low bandgap indium gallium arsenide (InGaAs) PV cells and rare earth yttrium aluminum garnet (YAG) thin film selective emitters, as well as, TPV system studies. An emittance theory has been developed for the thin film emitters. Experimental spectral emittance results for erbium Er-YAG and holmium Ho-YAG show excellent emittance (greater than or equal to .7) within the emission bands. The .75 eV InGaAs PV cells fabricated at Lewis have excellent quantum efficiency. An efficiency of 13% has been measured for this cell coupled to an Er-YAG selective emitter and a short pass IR filter.

Chubb, Donald L.↗

NASA NTRS1995

Review of Recent Thermophotovoltaic (TPV) Research at Lewis Research Center

Thermophotovoltaic (TPV) research at NASA Lewis Research Center that began in the late 1980's is reviewed. This work has been concentrated on low bandgap indium gallium arsenide (InGaAs) PV calls and rare earth - yttrium aluminum garnet (YAG) thin film selective emitters, as well as, TPV system studies. An emittance theory has been developed for the thin film emitters. Experimental spectral emittance results for erbium Er-YAG and holmium Ho-YAG show excellent emittance (greater than or equal to 0.7) within the emission bands. The 0.75 eV InGaAs PV cells fabricated at Lewis have excellent quantum efficiency. An efficiency of 130% has been measured for this cell coupled to an Er-YAG selective emitter and a short pass IR filter.

Chubb, Donald L.↗

NASA NTRS1994

InGaAs PV device development for TPV power systems

Indium gallium arsenide (InGaAs) photovoltaic devices have been fabricated with bandgaps ranging from 0.75 eV to 0.60 on Indium phosphide (InP) substrates. Reported efficiencies have been as high as 11.2 percent (AMO) for the lattice matched 0.75 eV devices. The 0.75 eV cell demonstrated 14.8 percent efficiency under a 1500 K blackbody with a projected efficiency of 29.3 percent. The lattice mismatched devices (0.66 and 0.60 eV) demonstrated measured efficiencies of 8 percent and 6 percent respectively under similar conditions. Low long wavelength response and high rack currents are responsible for the poor performance of the mismatched devices. Temperature coefficients have been measured and are presented for all of the bandgaps tested.

Wilt, David M.↗

NASA NTRS1994

InGaAs PV Device Development for TPV Power Systems

lndium Gallium Arsenide (InGaAs) photovoltaic devices have been fabricated with bandgaps ranging from 0.75 eV to 0.60 eV on Indium Phosphide (InP) substrates. Reported efficiencies have been as high as 11.2% (AMO) for the lattice matched 0.75 eV devices. The 0.75 eV cell demonstrated 14.8% efficiency under a 1500 K blackbody with a projected efficiency of 29.3%. The lattice mismatched devices (0.66 and 0.60 eV) demonstrated measured efficiencies of 8% and 6% respectively under similar conditions. Low long wavelength response and high dark currents are responsible for the poor performance of the mismatched devices. Temperature coefficients have been measured and are presented for all of the bandgaps tested.

Wilt, David M.↗

NASA NTRS1994

InGaAs PV Device Development for TPV Power Systems

Indium gallium arsenide (InGaAs) photovoltaic devices have been fabricated with bandgaps ranging from 0.75 eV to 0.60 eV on Indium Phosphide (InP) substrates. Reported efficiencies have been as high as 11.2 percent (AMO) for the lattice matched 0.75 eV devices. The 0.75 eV cell demonstrated 14.8 percent efficiency under a 1500 K blackbody with a projected efficiency of 29.3 percent. The lattice mismatched devices (0.66 and 0.60 eV) demonstrated measured efficiencies of 8 percent and 6 percent respectively under similar conditions. Low long wavelength response and high dark currents are responsible for the poor performance of the mismatched devices. Temperature coefficients have been measured and are presented for all of the bandgaps tested.

Wilt, David M.↗

NASA NTRS1992

Increased efficiency with surface texturing in ITO/InP solar cells

Optimization of an InP solar cell with a V-grooved surface is discussed. Total internal reflection in the coverglass reduces surface reflection and can recover light reflected from the front metallization. Results from the first ITO/InP solar cells on low-angle V-grooved substrates are presented, showing a 5.8 percent increase in current.

Jenkins, Phillip↗