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Reese, Matthew O.

Publications and source records attributed to Reese, Matthew O..

At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Investigation of Sub‐Bandgap Emission and Unexpected n‐Type Behavior in Undoped Polycrystalline CdSe x Te 1‐x

Abstract Se alloying has enabled significantly higher carrier lifetimes and photocurrents in CdTe solar cells, but these benefits can be highly dependent on CdSe x Te 1‐x processing. This work evaluates the optoelectronic, chemical, and electronic properties of thick (3 µm) undoped CdSe x Te 1‐x of uniform composition and varied processing conditions (CdSe x Te 1‐x evaporation rate, CdCl 2 anneal, Se content) chosen to reflect various standard device processing conditions. Sub‐bandgap defect emission is observed, which increased as Se content increased and with “GrV‐optimized CdCl 2 ” (i.e., CdCl 2 anneal conditions used for group‐V‐doped devices). Low carrier lifetime is found for GrV‐optimized CdCl 2 , slow CdSe x Te 1‐x deposition, and low‐Se films. Interestingly, all films (including CdTe control) exhibited n‐type behavior, where electron density increased with Se up to an estimated ≈10 17 cm −3 . This behavior appears to originate during the CdCl 2 anneal, possibly from Se diffusion leading to anion vacancy (e.g., V Se , V Te ) and Cl Te generation.

14 SOLAR ENERGY↗
DOE OSTI2023

Intra-Grain Local Luminescence Properties of CdSe0.1Te0.9 Thin Films

We report on the local photoluminescence properties of grains and grain boundaries of CdSe 0.1 Te 0.9 thin film deposited by the colossal grain growth method using a wide-field hyperspectral imaging technique. We observed significant variations in the photoluminescence intensity of both individual grains and also that of grain boundaries. Multiple sub-bandgap defect peaks were captured in the luminescence spectra in the energy range 1.2 eV to 1.6 eV. The intensity and peak positions of these sub-gap emissions were slightly different among various grains and at the grain boundaries, revealing intra- and inter-grain variations in these polycrystalline thin films. A recently-developed density-of-states based photoluminescence model was extended to include multiple peaks and was fitted to the data. We observed that at a fixed temperature, the quasi-Fermi level splitting energy and a disordered energy parameter can be extracted locally by use of this model.

data models↗
DOE OSTI2023

Cadmium Telluride Accelerator Consortium (CTAC)

The United States is the leader in cadmium telluride (CdTe) photovoltaic (PV) manufacturing, and CdTe is the second most-deployed solar technology in the world. The CdTe Accelerator Consortium (CTAC) was formed to enhance U.S. technology leadership and competitiveness in CdTe photovoltaics (PV) including increasing cell efficiencies, decreasing module costs, and maintaining or increasing domestic CdTe PV material and module production. Leadership for the 3-year consortium was selected by an NREL team through a competitive solicitation. CTAC was formally announced on August 1st by U.S. Secretary of Energy Jennifer M. Granholm and U.S. Representative Marcy Kaptur at an event held at University of Toledo. We will give an overview of CTAC research directions along with their goals and activities. We can also discuss how CTAC relates to the National Renewable Energy Laboratory (NREL) and to the U.S. Manufacturing of Advanced Cadmium Telluride Photovoltaics Consortium (US-MAC). Visit our poster to find out who leads CTAC and how you can get involved.

costs↗
DOE OSTI2023

Status report on emerging photovoltaics

This report provides a snapshot of emerging photovoltaic (PV) technologies. It consists of concise contributions from experts in a wide range of fields including silicon, thin film, III-V, perovskite, organic, and dye-sensitized PVs. Strategies for exceeding the detailed balance limit and for light managing are presented, followed by a section detailing key applications and commercialization pathways. A section on sustainability then discusses the need for minimization of the environmental footprint in PV manufacturing and recycling. The report concludes with a perspective based on broad survey questions presented to the contributing authors regarding the needs and future evolution of PV.

14 SOLAR ENERGY↗
DOE OSTI2023

Imaging local luminescence variations in CdSe 0.1 Te 0.9 thin films grown by the colossal grain growth process

Clear visualization and understanding of luminescence properties of grain interiors and grain boundaries in polycrystalline thin-film photovoltaic materials are crucial to achieving high-performance solar cells. Luminescence-based measurements, for example, reveal sub-bandgap energetic disorder or impurity-related radiative transitions in these materials, and when performed in the absolute scale, they can show the extent of voltage-limiting non-radiative recombination. Here we use a hyperspectral imaging technique to investigate inter- and intra-grain photoluminescence variations in polycrystalline CdSe 0.1 Te 0.9 films made by the colossal grain growth process. We observe that grain boundaries show higher luminescence than grain interiors for all energies below the bandgap energy. Multiple distinct sub-bandgap defect transitions are detected and determined to be related to donor-acceptor pair impurities. A comparison of the excitation-intensity-dependent photoluminescence at the grain boundaries with grain interiors suggests that carrier concentration is higher at grain boundaries. This finding is supported by photoemission electron microscopy imaging of the films, showing approximately 70 meV upward energy shift in the band structure at the grain boundaries. Finally, we investigate a dramatic thermal quenching behavior related to the donor-acceptor pairs luminescence over a temperature range and use a rate-equation model to attribute it to the sudden redirection of the radiative recombination channels to non-radiative channels with increasing temperature.

14 SOLAR ENERGY↗
DOE OSTI2023

Photovoltaic device innovation for a solar future

Photovoltaics (PV), also known as solar cells, are now found everywhere - in utility plants; on roofs of homes and commercial buildings; on platforms at sea; in agricultural fields; on vehicles, buildings, drones, and backpacks; and, in their longest running application, providing power in space. Continuous device innovation has led to increased efficiency and improved reliability for multiple PV technologies. Confronted with an urgent need to deploy PV at multiterawatt (TW) scale over the next two decades to mitigate greenhouse gas emissions, PV device innovation takes on new urgency and impact. This perspective reviews recent progress in device design and performance for PV technologies that are currently in commercial production at greater than 1 GW/year or enabling significant space-based power generation - Si, CdTe, CIGS, and multijunction III-V - and looks ahead to the next 5 years. In conclusion, we also identify device-related topics requiring cross-cutting research and innovation.

14 SOLAR ENERGY↗
DOE OSTI2023

Nanometer-scale electrical potential imaging on absorber of CdSeTe solar cells

Here, we report on nm-scale electrical potential imaging throughout As-doped and Cu-doped CdSeTe absorbers using Kelvin probe force microscopy (KPFM). The potential imaging was conducted both laterally and vertically on beveled films using ion milling at small glancing angle. KPFM images electrical potential on the beveled surface and assesses defect charging in the subsurface region within a screening length from the beveled surface. We found that the grain boundaries were positively charged and that there were significant potential fluctuations in both grain boundary versus grain interior and intragrain. We further found that these potential fluctuations decreased significantly toward the front interface. Time of flight secondary ion mass spectrometry imaging shows that Se content increased toward the front interface, consistent with Se passivation of defects. The potential fluctuation was induced by defect charging, and the results elucidate different details of the defect configurations and grain structures of the films with different CdCl 2 treatment temperatures in the As-doped CdSeTe. The defect configurations in the region near the front interface can be a main factor contributing to the device performance difference. Our potential imaging provides insights about the defects throughout the absorber films, and shows that the potential fluctuation has a direct correlation to the V oc deficit.

14 SOLAR ENERGY↗
DOE OSTI2023

Thermomechanical Cleave of Polycrystalline CdTe Solar Cells and its Applications: A Review

One of the primary research challenges for cadmium telluride (CdTe) solar cells is addressing its open‐circuit voltage ( V OC ) deficit. While theoretical studies and single crystal work show V OC > 1 V is possible, devices remain stubbornly low at ≈800–900 mV. As absorber opto‐electronic properties (e.g., hole density, carrier lifetime) are improved, device modeling suggests that interfaces become limiting. Because CdTe‐based devices are typically grown in the superstrate configuration, the back interface is relatively accessible for manipulation and study, while the front interface (i.e., the heterojunction region) is buried under microns of material and inaccessible. NREL has developed a novel technique to thermomechanically cleave polycrystalline CdTe device stacks directly at the front interface, enabling characterization and controlled manipulation of this important region. Herein, recent work, primarily from NREL, will be reviewed, including considerations for achieving successful delamination; key scientific discoveries about the front interface that have been enabled by this technique; and practical applications, such as flexible, low‐cost solar with high power‐to‐weight ratio.

14 SOLAR ENERGY↗
DOE OSTI2023

IPL-Annealed Mixed-Cation Perovskites with Robust Coating Window toward Scalable Manufacturing of Commercial Perovskite Solar Cells

Perovskite solar cells (PSCs) are a promising alternative solar technology, but the technical challenges of (1) stability/durability, (2) efficiency at scale, and (3) manufacturability must be overcome to achieve widespread PSC commercialization. The challenge of balancing solution ink formulation and scalable manufacturing is often overlooked in the literature, where focus is on adopting inks from processes that will not scale. In this study, we apply a classical roll-to-roll manufacturing perspective, utilizing both compositional engineering and intense pulsed light (IPL) annealing, to develop a mixed-cation perovskite ink with a robust coating window that simultaneously solve issues of stability and manufacturability for PSCs. Our method resulted in blade-coated, flexible, mixed-cation PSCs on ITO-PET substrates with a champion power conversion efficiency (PCE) efficiency of 16.7% using IPL annealing of the absorber layer and, to our knowledge, is one of the fastest processing methods for the perovskite layer. This overall reduction in processing time with a stable ink represents an advance toward the scaled production of perovskite solar cells on flexible substrates.

flexible perovskite solar cells↗
DOE OSTI2023

High Performing Inverted Flexible Perovskite Solar Cells via Solution Phase Deposition of Yttrium-Doped SnO 2 Directly on Perovskite

Solution processing of flexible perovskite solar cells (f-PSCs) provides an avenue for scalable, high-throughput printing of lightweight, scalable, and cost-effective flexible solar cells. However, the deposition of fully solution-processed metal oxide charge transport layers on perovskites has been limited by solvent incompatibilities and high processing temperatures for metal oxide nanoparticles. In this study, we present high-performance, inverted f-PSCs from the direct deposition of yttrium doped SnO 2 nanoparticles functionalized with acetate on top of perovskite as an ink in anhydrous ethanol via blade coating. Yttrium doping improved device performance by improving the charge extraction leading with a decreased series resistance leading to improvements in the open-circuit voltage and fill factor. Furthermore, the champion power conversion efficiency for 0.1 cm 2 devices increased from 14.3% for undoped SnO 2 to 18.2% with 2% Y:SnO 2 doping, which is unprecedented for f-PSCs on ITO-PET substrate employing SnO 2 as an ETL.

14 SOLAR ENERGY↗
DOE OSTI2023

Cracked Film Lithography with CuGaO x Buffers for Bifacial CdTe Photovoltaics

Abstract Bifacial CdTe solar cells with greater power density than the monofacial baselines are demonstrated by using a CuGaO x rear interface buffer that passivates while reducing sheet resistance and contact resistance. Inserting CuGaO x between the CdTe and Au increases mean power density from 18.0 ± 0.5 to 19.8 ± 0.4 mW cm −2 for one sun front illumination. However, coupling CuGaO x with a transparent conductive oxide leads to an electrical barrier. Instead, CuGaO x is integrated with cracked film lithography (CFL)‐patterned metal grids. CFL grid wires are spaced narrowly enough (≈10 µm) to alleviate semiconductor resistance while retaining enough passivation and transmittance for a bifacial power gain: bifacial CuGaO x /CFL grids generate 19.1 ± 0.6 mW cm −2 for 1 sun front + 0.08 sun rear illumination and 20.0 ± 0.6 mW cm −2 at 1 sun front + 0.52 sun rear—the highest reported power density at field albedo conditions for a scaled polycrystalline absorber.

14 SOLAR ENERGY↗
DOE OSTI2023

CdTe-based thin film photovoltaics: Recent advances, current challenges and future prospects

Cadmium telluride (CdTe)-based cells have emerged as the leading commercialized thin film photovoltaic technology and has intrinsically better temperature coefficients, energy yield, and degradation rates than Si technologies. More than 30 GW peak (GWp) of CdTe-based modules are installed worldwide, multiple companies are in production, modules are shipping at up to 18.6% efficiency, and lab cell efficiency is above 22%. We review developments in the science and technology that have occurred over approximately the past decade. These achievements were enabled by manufacturing innovations and scaling module production, as well as maximizing photocurrent through window layer optimization and alloyed CdSe x Te 1-x (CST) absorbers. Improved chlorine passivation processes, film microstructure, and serendipitous Se defect passivation significantly increased minority carrier lifetime. Efficiencies >22% have been realized for both Cu and As doped CST-based cells. The path to further efficiency gains hinges primarily on increasing open circuit voltage (V oc ) and fill factor (FF) through innovations in materials, fabrication methods, and device stacks. Replacing the longstanding Cu doping with As doping is resulting in better module stability and is being translated to large-scale production. To realize 25% efficiency and >1 V V oc , research and development is needed to increase the minority carrier lifetime beyond 100 ns, reduce grain boundary and interface recombination, and tailor band diagrams at the front and back interfaces. Many of these goals have been realized separately however combining them together using scalable manufacturing approaches has been elusive to date. We review these achievements and outstanding opportunities for this remarkable photovoltaic technology.

14 SOLAR ENERGY↗
DOE OSTI2022

Effect of Near-Interface Compensation of CdSeTe Absorber Layers on Solar Cell Performance

Arsenic has been shown to be an effective p-type dopant of CdTe. However, challenges remain in the fabrication of high efficiency CdTe solar cells using As. As-doped CdTe is prone to self-compensation and observed accumulation of dopant atoms in CdTe near the interface with MgZnO (MZO) suggests that this could be occurring. In this study, we use SCAPS 1-D modeling software to investigate the effect of near-interface compensation. We consider three cases: shallow donors, deep recombination centers, and a thin layer of excess positive charge accumulation. All of these cases are shown to have significant effects on the current-voltage characteristics, while the thin charge layer also affects capacitance-voltage measurements.

arsenic↗
DOE OSTI2022

Titanium Carbide MXene Hole Contacts for CdTe Photovoltaics

CdTe is a high‐efficiency thin‐film photovoltaic technology that has seen tremendous commercial success over the past decade. Yet despite the improvement of other device characteristics, the fabrication of an ohmic hole back contact layer has remained a challenge due to the high ionization potential of CdTe, which limits the external potential that can be feasibly reached even as other characteristics of the device improve. MXenes, a family of 2D materials with rapidly growing scientific and commercial interest, offer a promising route to forming low‐cost, low‐barrier contacts due to their demonstrated high work function, metallic conductivity, and facile solution processing from benign solvents. Here, it is shown that Ti 3 C 2 T x MXene films processed from an aqueous colloidal dispersion can perform as a highly efficient hole contact material for CdTe solar cells, resulting in high power‐conversion efficiencies. The role of the Schottky barrier formation in Ti 3 C 2 T x ‐contacted CdTe devices is probed, and potential pathways for the future development of this potent combination of materials are elucidated. The modularity of the expansive MXene family of materials presents a promising strategy for developing next‐generation hole contacts for CdTe solar cells.

14 SOLAR ENERGY↗
DOE OSTI2022

Effects of Absorber Near-Interface Compensation on Cd(Se,Te) Solar Cell Performance

Arsenic (As) has been shown to be an effective p-type dopant for CdTe, although high performance in As-doped devices remains difficult to achieve. Arsenic is prone to self-compensation in CdTe, as evidenced by the accumulation of dopant atoms in CdTe/Cd(Se,Te) near the interface with MgxZn1-xO (MZO). In this study, we use SCAPS 1D modeling software to investigate the effect of near-interface compensation, helping elucidate loss pathways in present-day As-doped devices and informing future growth directions. We consider three possible results of As accumulation: shallow donors, deep recombination centers, and a thin layer of excess acceptor accumulation. The reduction in near-interface carrier concentration caused by shallow donors is shown to improve open-circuit voltages (VOC), whereas deep levels are detrimental to all performance parameters. The thin charge layer affects capacitance-voltage (CV) measurements by reducing the depletion width while maintaining the same carrier concentration, replicating CV behavior that has been observed in actual devices. These results illustrate the importance of monitoring dopant accumulation within 100 nm of the interface, and suggest that reducing or eliminating the As concentration in this region would be beneficial. An undoped Cd(Se,Te) layer at the interface is suggested as a possible device structure to boost performance.

absorber↗