Engineering Papers⌕ Search

Engineering topics

Ravi, K. V.

Publications and source records attributed to Ravi, K. V..

11 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1985

High-efficiency cell concepts on low-cost silicon sheets

The limitations on sheet growth material in terms of the defect structure and minority carrier lifetime are discussed. The effect of various defects on performance are estimated. Given these limitations designs for a sheet growth cell that will make the best of the material characteristics are proposed. Achievement of optimum synergy between base material quality and device processing variables is proposed. A strong coupling exists between material quality and the variables during crystal growth, and device processing variables. Two objectives are outlined: (1) optimization of the coupling for maximum performance at minimal cost; and (2) decoupling of materials from processing by improvement in base material quality to make it less sensitive to processing variables.

Bell, R. O.↗
NASA NTRS1984

Overview of Characterization Techniques for High Speed Crystal Growth

Features of characterization requirements for crystals, devices and completed products are discussed. Key parameters of interest in semiconductor processing are presented. Characterization as it applies to process control, diagnostics and research needs is discussed with appropriate examples.

Ravi, K. V.↗
NASA NTRS1982

Photovoltaic research needs industry perspective

An industries perspective of photovoltaic research needs is presented. Objectives and features of industry needs are discussed for the materials, devices, processes, and reliability research categories.

Ravi, K. V.↗
NASA NTRS1978

Large area silicon sheet by EFG

The edge-defined, film-fed growth (EFG) technique has been employed to grow silicon ribbons for photovoltaic applications. Considerable progress has been made in recent years in developing the technique to the point that long lengths of silicon ribbon can be routinely grown. In order to attain the full low-cost potential of the EFG technique, several further developments such as the growth of thinner and wider ribbons, increase in ribbon growth rate, and improvements in material quality are needed. The technological problems to be solved and the approaches employed to achieve these goals are discussed.

Rao, C. V. H.↗
NASA NTRS1978

Response of defects to illumination in silicon solar cells

The enhancement of diffusion length with intensity was examined using spectral response measurements in solar cells based on Silso silicon and EFG silicon ribbon. Local diffusion length variations at defect sites were investigated as a function of illumination level using a scanning electron microscope operated in the electron beam induced current mode. An increase of diffusion length was observed at defect sites as the intensity level was increased. The diffusion length improvements are explained on the basis of saturation of minority carrier traps in these materials. The trap distribution in Silso silicon is shown to be peaked near (Ec - 0.7)eV. EFG silicon ribbon shows a broad, Gaussian distribution of traps located near (Ec - 0.5)eV.

Hari Rao, C. V.↗
NASA NTRS1976

Orientation dependence of defect structure in EFG silicon ribbons

Sustained growth of long lengths of silicon ribbons by the edge-defined film-fed growth (EFG) technique is shown to result in the attainment of an 'equilibrium' defect structure and orientation by the crystals. The structure consists of parallel defect boundaries parallel to the edges of the ribbon with a specific ribbon orientation. The influence of seed orientation on the attainment of this structure has been examined.

Garone, L. C.↗
NASA NTRS1976

Large area silicon sheet by EFG

Progress in a program to produce high speed, thin, wide silicon sheets for fabricating 10% efficient solar cells is reported. An EFG ribbon growth system was used to perform growth rate and ribbon thickness experiments. A new, wide ribbon growth system was developed. A theoretical study of stresses in ribbons was also conducted. The EFG ribbons were observed to exhibit a characteristic defect structure which is orientation dependent in the early stages of growth.

Morrison, A. D.↗
NASA NTRS1975

Low cost silicon solar arrays

Continuous growth methodology for silicon solar cell ribbons deals with capillary effects, die effects, thermal effects and crystal shape effects. Emphasis centers on the shape of the meniscus at the ribbon edge as a factor contributing to ribbon quality with respect to defect densities. Structural and electrical characteristics of edge defined, film-fed grown silicon ribbons are elaborated. Ribbon crystal solar cells produce AMO efficiencies of 6 to 10%.

Ravi, K. V.↗
NASA NTRS1975

EFG silicon ribbon solar cells

The growth and characteristics of edge defined, film fed grown (EFG) silicon ribbons are discussed. Factors involved in the growth of continuous lengths of 1 in. wide ribbons are examined. The structural and electrical characteristics of the ribbons have been studied and the results are presented. Solar cells have been fabricated using the ribbon crystals and typical AMO efficiencies of 6 to 10% have been realized.

Ravi, K. V.↗
NASA NTRS1972

Reliability improvement of wire bonds subjected to fatigue stresses.

The failure of wire bonds due to repeated flexure when semiconductor devices are operated in an on-off mode has been investigated. An accelerated fatigue testing apparatus was constructed and the major fatigue variables, aluminum alloy composition, and bonding mechanism, were tested. The data showed Al-1% Mg wires to exhibit superior fatigue characteristics compared to Al-1% Cu or Al-1% Si and ultrasonic bonding to be better than thermocompression bonding for fatigue resistance. Based on these results highly reliable devices were fabricated using Al-1% Mg wire with ultrasonic bonding which withstood 120,000 power cycles with no failures.

Ravi, K. V.↗